2302LM-E1 [BCDSEMI]

2A DDR TERMINATION REGULATOR; 2A DDR终端稳压器
2302LM-E1
型号: 2302LM-E1
厂家: BCD SEMICONDUCTOR MANUFACTURING LIMITED    BCD SEMICONDUCTOR MANUFACTURING LIMITED
描述:

2A DDR TERMINATION REGULATOR
2A DDR终端稳压器

稳压器 双倍数据速率
文件: 总12页 (文件大小:140K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary Datasheet  
2A DDR TERMINATION REGULATOR  
AP2302L  
General Description  
Features  
·
Support Both DDR I (1.25V ) and DDR II  
TT  
The AP2302L linear regulator is designed to meet the  
JEDEC specification SSTL-2 and SSTL-18 for termi-  
nation of DDR-SDRAM. The regulator can sink or  
source up to 2A current continuously, providing  
enough current for most DDR applications. Output  
voltage is designed to track the reference voltage  
within a ± 20mV tolerance for load regulation while  
preventing shooting through on the output stage. On-  
chip thermal limiting provides protection against a  
combination of high current and ambient temperature  
which would create an excessive junction temperature.  
(0.9V ) Requirements  
TT  
·
·
·
Source and Sink Current up to 2A  
High Accuracy Output Voltage at Full-load  
Adjustable V  
by External Resistors  
OUT  
·
Shutdown for Standby or Suspend Mode  
Operation with High-impedance Output  
Applications  
The AP2302L, used in conjunction with series termi-  
nation resistors, provides an excellent voltage source  
for active termination schemes of high speed transmis-  
sion lines as those seen in high speed memory buses  
and distributed backplane designs.  
·
·
·
DDR-SDRAM Termination  
DDR-II Termination  
SSTL-2 Termination  
The AP2302L is available in SOIC-8 and TO-252-5L  
packages.  
TO-252-5L  
SOIC-8  
Figure 1. Package Types of AP2302L  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
1
Preliminary Datasheet  
2A DDR TERMINATION REGULATOR  
AP2302L  
Pin Configuration  
M Package  
(SOIC-8)  
D Package  
(TO-252-5L)  
VIN  
VOUT  
5
4
8
7
6
5
VCNTL  
VCNTL  
VCNTL  
VCNTL  
1
2
3
4
REFEN  
GND  
VCNTL (TAB)  
3
2
REFEN  
VOUT  
GND  
VIN  
1
Figure 2. Pin Configuration of AP2302L (Top View)  
Pin Description  
Pin Number  
Pin Name  
Function  
SOIC-8  
TO-252-5L  
VIN  
1
2
3
4
1
2
4
5
Power Input.  
Ground.  
GND  
REFEN  
VOUT  
Reference Voltage Input and Chip Enable.  
Output Voltage.  
Supply Voltage for Internal Circuit (Internally Connected for SOIC-8), (TAB  
for TO-252-5L).  
VCNTL  
5, 6, 7, 8  
3
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
2
Preliminary Datasheet  
2A DDR TERMINATION REGULATOR  
AP2302L  
Functional Block Diagram  
VCNTL(TAB)  
V
IN  
1 (1)  
5,6,7,8 (3)  
CURRENT  
LIMIT  
A(B)  
A for SOIC-8  
B for TO-252-5L  
BANDGAP  
3 (4)  
OUTPUT  
CONTROL  
4 (5)  
2 (2)  
REFEN  
VOUT  
GND  
START UP  
THERMAL  
PROTECT  
Figure 3. Functional Block Diagram of AP2302L  
Ordering Information  
AP2302L  
-
E1: Lead Free  
Blank: Tin Lead  
Circuit Type  
Package  
M: SOIC-8  
D: TO-252-5L  
TR: Tape and Reel  
Blank: Tube  
Package  
Temperature Range  
Part Number  
Marking ID  
Packing Type  
Tube  
AP2302LM-E1  
AP2302LMTR-E1  
AP2302LD-E1  
2302LM-E1  
0 to 125oC  
SOIC-8  
2302LM-E1  
Tape Reel  
Tube  
AP2302LD-E1  
AP2302LD-E1  
0 to 125oC  
TO-252-5L  
AP2302LDTR-E1  
Tape Reel  
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
3
Preliminary Datasheet  
2A DDR TERMINATION REGULATOR  
AP2302L  
Absolute Maximum Ratings (Note 1)  
Value  
Parameter  
Symbol  
VCNTL  
PD  
Unit  
Supply Voltage for Internal Circuit  
Power Dissipation  
7
V
Internally Limited  
W
ESD (Human Body Model)  
Junction Temperature  
ESD  
TJ  
2
KV  
oC  
oC  
150  
TSTG  
Storage Temperature Range  
-65 to 150  
260  
oC  
TLEAD  
Lead Temperature (Soldering, 10sec)  
SOIC-8  
TO-252-5L  
160  
130  
oC/W  
θJA  
Package Thermal Resistance (Free Air)  
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.  
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated  
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods  
may affect device reliability.  
Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
VCNTL (Note 2, 3)ꢀ  
Supply Voltage for Internal Circuit  
3.3  
6
V
DDR I  
2.5  
1.8  
VIN  
TJ  
VCNTL  
Power Input  
1.6  
0
V
DDR II  
oC  
Junction Temperature  
125  
Note 2: Keep VCNTL VIN in operation power on and power off sequences.  
Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V.  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
4
Preliminary Datasheet  
2A DDR TERMINATION REGULATOR  
AP2302L  
Electrical Characteristics  
(TJ=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10µF (Ceramic), unless otherwise specified.)  
Parameter  
Symbol  
Conditions  
ΙL=0Α (Note 4)  
Min  
Typ  
Max Unit  
Output Offset Voltage  
VOS  
-20  
0
20  
mV  
IL=0 to 2A  
DDR I  
-20  
-20  
0
20  
IL=0 to -2A  
Load  
Regulation  
mV  
VOUT  
IL=0 to 2A  
DDR II  
0
20  
IL=0 to -2A  
Quiescent Current of VCNTL  
Leakage Current in Shutdown Mode  
Protection  
IQ  
No Load  
3
3
5
6
mA  
ISHDN  
VREFEN<0.2V, RL=180Ω  
µA  
Current Limit  
ILIMIT  
TSHDN  
2.6  
0.8  
A
oC  
oC  
Thermal Shutdown Temperature  
Thermal Shutdown Hysteresis  
Shutdown Function  
3.3V VCNTL 5V  
150  
50  
Output=High  
Output=Low  
Shutdown Threshold Trigger  
V
0.2  
Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN  
.
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
5
Preliminary Datasheet  
2A DDR TERMINATION REGULATOR  
AP2302L  
Typical Performance Characteristics  
6
4
2
6
4
VCNTL=3.3V  
VIN=2.5V  
VCNTL=3.3V  
VIN=2.5V  
VOUT=1.25V  
VOUT=1.25V  
2
-40  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-20  
0
20  
40  
60  
80  
100  
120  
Junction Temperature (oC)  
Junction Temperature (oC)  
Figure 4. Sourcing Current vs. Junction Temperature  
Figure 5. Sinking Current vs. Junction Temperature  
650  
600  
650  
600  
550  
550  
VCNTL=5.0V  
VCNTL=3.3V  
VIN=2.5V  
VIN=2.5V  
500  
500  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Junction Temperature (oC)  
Junction Temperature (oC)  
Figure 7. Threshold Voltage vs. Junction Temperature  
Figure 6. Threshold Voltage vs. Junction Temperature  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
6
Preliminary Datasheet  
2A DDR TERMINATION REGULATOR  
AP2302L  
Typical Performance Characteristics (Continued)  
40  
20  
0
40  
20  
0
-20  
-20  
2
0
2
0
-2  
-4  
-2  
-4  
Time (µs)  
Time (µs)  
Figure 8. 0.9VTT at 2A Transient Response  
(Conditions:VIN=2.5V, VCNTL=3.3V, COUT=10µF)  
Figure 9. 1.25VTT at 2A Transient Response  
(Conditions:VIN=2.5V, VCNTL=3.3V, COUT=10µF)  
0.30  
0.30  
VIN=0.9V  
VIN=0.85V  
VIN=0.8V  
VIN=0.9V  
VIN=0.85V  
VIN=0.8V  
0.28  
0.26  
0.24  
0.22  
0.20  
0.18  
0.16  
0.28  
0.26  
0.24  
0.22  
0.20  
0.18  
0.16  
VCNTL=3.3V  
VREFEN=1.0V  
VCNTL=5V  
VREFEN=1.0V  
25  
50  
75  
100  
125  
25  
50  
75  
100  
125  
Junction Temperature (oC)  
Junction Temperature (oC)  
Figure 11. RDS(on) vs. Junction Temperature  
Figure 10. RDS(on) vs. Junction Temperature  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
7
Preliminary Datasheet  
2A DDR TERMINATION REGULATOR  
AP2302L  
Typical Performance Characteristics (Continued)  
350  
350  
Package: TO-252-5L  
No Heatsink  
Package: SOIC-8  
No Heatsink  
300  
300  
TC=25oC  
TC=50oC  
TC=65oC  
250  
200  
150  
100  
250  
200  
150  
100  
TC=25oC  
TC=50oC  
TC=65oC  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
10.0  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
Power Dissipation (W)  
Power Dissipation (W)  
Figure 13. Copper Area vs. Power Dissipation  
Figure 12. Copper Area vs. Power Dissipation  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
8
Preliminary Datasheet  
2A DDR TERMINATION REGULATOR  
AP2302L  
Typical Application  
VCNTL = 3.3V  
VIN = 2.5V  
RTT  
CCNTL  
CIN  
VIN  
REFEN  
VCNTL  
AP2302L VOUT  
GND  
R1  
EN  
R2  
CSS  
COUT RDUMMY  
Figure 14. Typical Application of AP2302L  
R1 = R2 = 100K, RTT = 50/ 33/ 25Ω  
RDUMMY = 1KΩ, as for VOUT discharge when VIN is not present but VCNTL is present  
CSS = 1µF, CIN = 470µF, CCNTL = 47µF, COUT =470µF  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
9
Preliminary Datasheet  
2A DDR TERMINATION REGULATOR  
AP2302L  
Mechanical Dimensions  
SOIC-8  
Unit: mm(inch)  
4.800(0.189)  
5.000(0.197)  
0.320(0.013)  
1.350(0.053)  
1.750(0.069)  
0.675(0.027)  
0.725(0.029)  
D
5.800(0.228)  
6.200(0.244)  
1.270(0.050)  
TYP  
D
20:1  
φ
0.800(0.031)  
0.200(0.008)  
0.100(0.004)  
0.300(0.012)  
0°  
8°  
1.000(0.039)  
3.800(0.150)  
4.000(0.157)  
1°  
5°  
0.330(0.013)  
0.510(0.020)  
0.900(0.035)  
6)  
00  
(0.  
50  
.1  
R0  
0.190(0.007)  
0.250(0.010)  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
10  
Preliminary Datasheet  
2A DDR TERMINATION REGULATOR  
AP2302L  
Mechanical Dimensions (Continued)  
TO-252-5L  
Unit: mm(inch)  
6.350(0.250)  
6.700(0.264)  
4.300(0.169)  
5.500(0.217)  
2.180(0.086)  
2.400(0.094)  
4.800(0.189)  
MIN  
0.430(0.017)  
0.600(0.023)  
0.900(0.035)  
1.250(0.049)  
5.970(0.235)  
6.220(0.245)  
9.500(0.374)  
10.400(0.410)  
4.300(0.169)  
5.400(0.213)  
0.000(0.000)  
0.250(0.010)  
2.550(0.100)  
3.200(0.126)  
2.540(0.100)BSC  
0.450(0.018)  
0.700(0.028)  
0.430(0.017)  
0.600(0.023)  
5.080(0.200)  
BSC  
1.400(0.055)  
1.780(0.070)  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
11  
http://www.bcdsemi.com  
IMPORTANT NOTICE  
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-  
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any  
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use  
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or  
other rights nor the rights of others.  
MAIN SITE  
BCD Semiconductor Manufacturing Limited  
BCD Semiconductor Manufacturing Limited  
- Wafer Fab  
- IC Design Group  
Shanghai SIM-BCD Semiconductor Manufacturing Limited  
800, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
Advanced Analog Circuits (Shanghai) Corporation  
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
USA Office  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office  
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office  
27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China  
Tel: +86-755-8368 3987, Fax: +86-755-8368 3166  
BCD Semiconductor (Taiwan) Company Limited  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,  
Taiwan  
BCD Semiconductor Corporation  
3170 De La Cruz Blvd., Suite 105, Santa Clara,  
CA 95054-2411, U.S.A  
Tel: +886-2-2656 2808, Fax: +886-2-2656 2806  
Tel: +1-408-988 6388, Fax: +1-408-988 6386  

相关型号:

2303

Insert Molded Coil
FRONTIER

2303-01

Insert Molded Coil
FRONTIER

2303-02

Insert Molded Coil
FRONTIER

2303-03

Insert Molded Coil
FRONTIER

2303-04

Insert Molded Coil
FRONTIER

2303-05

Insert Molded Coil
FRONTIER

2303-06

Insert Molded Coil
FRONTIER

2303-07

Insert Molded Coil
FRONTIER

2303-08

Insert Molded Coil
FRONTIER

2303-09

Insert Molded Coil
FRONTIER
MILL-MAX
MILL-MAX