概述
规格参数
数据手册AH211Z4-BE1 概述
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT 两相霍尔效应锁存器中FG输出 磁场传感器
AH211Z4-BE1 规格参数
| 生命周期： | Transferred | Reach Compliance Code： | unknown |
| 风险等级： | 5.22 | 主体宽度： | 1.62 mm |
| 主体长度或直径： | 5.13 mm | 滞后： | 6 mT |
| 最大磁场范围： | 9 mT | 最小磁场范围： | -9 mT |
| 安装特点： | THROUGH HOLE MOUNT | 最大工作电流： | 8 mA |
| 最高工作温度： | 85 °C | 最低工作温度： | -20 °C |
| 封装形状/形式： | RECTANGULAR | 传感器/换能器类型： | MAGNETIC FIELD SENSOR,HALL EFFECT |
| 最大供电电压： | 16 V | 最小供电电压： | 3.5 V |
| 表面贴装： | NO | 端接类型： | SOLDER |
| Base Number Matches： | 1 |
AH211Z4-BE1 数据手册
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PDF下载Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT
AH211
General Description
Features
The AH211 is an integrated Hall sensor with output
driver and frequency generator designed for electronic
commutation of brush-less DC motor applications. The
device includes an on-chip Hall sensor for magnetic
sensing, an amplifier that amplifies the Hall voltage, a
Schmitt trigger to provide switching hysteresis for
noise rejection, a temperature compensation circuit to
compensate the temperature drift of Hall sensitivity,
two complementary open-collector drivers for sinking
large load current. It also includes an internal band-gap
regulator which is used to provide bias voltage for
internal circuits.
·
On-Chip Hall Sensor
3.5V to 16V Supply Voltage
400mA (avg) Output Sink Current
·
·
·
·
·
·
o
o
-20 C to 85 C Operating Temperature
Built-in FG Output
Low Profile TO-94 (SIP-4L) Package
ESD Rating: 300V (Machine Model)
Applications
·
·
·
·
Dual-Coil Brushless DC Motor
Dual-Coil Brushless DC Fan
Revolution Counting
Place the device in a variable magnetic field, while the
magnetic flux density is larger than threshold BOP, DO
will be turned on (low) and DOB (and FG) will be
turned off (high). This output state is held till the mag-
netic flux density reversal falls below BRP causing DO
to be turned off (high) and DOB (and FG) turned on
(low).
Speed Measurement
AH211 is available in TO-94 (SIP-4L) package.
TO-94
Figure 1. Package Type of AH211
Mar. 2007 Rev. 1.3
BCD Semiconductor Manufacturing Limited
1
Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT
AH211
Pin Configuration
Z4 Package
(TO-94)
4
3
2
1
GND
DOB
DO
FG
Figure 2. Pin Configuration of AH211 (Front View)
Pin Description
Pin Number
Pin Name
FG
Function
1
2
3
4
Frequency Generation
Output 1
DO
DOB
GND
Output 2
Ground
Mar. 2007 Rev. 1.3
BCD Semiconductor Manufacturing Limited
2
Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT
AH211
Functional Block Diagram
2
Temperature
Compensation
DO
Regulator
Hall
Sensor
Schmitt
Trigger
Output
Driver
Amplifier
3
DOB
4
GND
1
FG
Figure 3. Functional Block Diagram of AH211
Ordering Information
AH211
-
Circuit Type
Package
E1: Lead Free
Magnetic Characteristics
A: 5 to 60 Gauss
B: 90 Gauss
Z4: TO-94 (SIP-4L)
Package
Temperature Range
Part Number
AH211Z4-AE1
AH211Z4-BE1
Marking ID
AH211
AH211
Packing Type
Bulk
-20 to 85 oC
TO-94
Bulk
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Mar. 2007 Rev. 1.3
BCD Semiconductor Manufacturing Limited
3
Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT
AH211
Absolute Maximum Ratings (Note 1)
o
(T =25 C)
A
Parameter
Symbol
Value
Unit
Supply Voltage
VCC
20
V
Magnetic Flux Density
B
Unlimited
400
Gauss
mA
Continuous
Hold
Output Current
IO
600
mA
Peak (start up)
800
mA
FG Current
IFG
PD
20
mA
Power Dissipation
550
227
mW
oC/W
oC/W
Die to atmosphere
Die to package case
θJA
θJC
TSTG
Thermal Resistance
Storage Temperature
49
oC
V
-50 to 150
ESD (Machine Model)
300
ESD (Human Body Model)
3000
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect
device reliability.
Recommended Operating Conditions
o
(T =25 C)
A
Parameter
Symbol
VCC
Min
3.5
Max
16
Unit
Supply Voltage
Ambient Temperature
V
oC
TA
-20
85
Mar. 2007 Rev. 1.3
BCD Semiconductor Manufacturing Limited
4
Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT
AH211
Electrical Characteristics
o
(T =25 C, V =14V, unless otherwise specified)
A
CC
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
B>150Gauss, VCC=3.5V,
VDOB=VCC, IDO=100mA
(or B<-150Gauss, VCC=3.5V,
VDO=VCC, IDOB=100mA)
1.1
V
VSAT
Output Saturation Voltage
B>150Gauss,
VDOB=VCC, IDO=400mA
1.05
1.3
V
(or B<-150Gauss, VDO=VCC
,
IDOB=400mA)
B<-150Gauss, VDO=VCC
,
VSATF
IOLF
ICC
FG Saturation Voltage
FG Leakage Current
Supply Current
0.35
0.1
8
0.6
10
10
V
I
FG=20mA
B>150Gauss, VDOB=VCC
,
µA
mA
VFG=16V
B>150Gauss, VDOB=VCC
,
(or B<-150Gauss, VDO=VCC
)
Output Rise Time
tr
tf
RL=1kΩ, CL=10pF
RL=1kΩ, CL=10pF
RL=1kΩ, CL=10pF
3.0
0.3
3.0
55
10
1.0
10
µs
µs
µs
V
Output Fall Time
Switch Time Differential
Output Zener Breakdown Voltage
∆t
VZ
Magnetic Characteristics
o
(T =25 C)
A
Parameter
Symbol
Grade
Min
Typ
Max
Unit
A
B
A
B
5
30
-30
60
60
90
-5
Gauss
Gauss
Gauss
Gauss
Gauss
BOP
Operating Point
-60
-90
BRP
Releasing Point
Hysteresis
BHYS
Mar. 2007 Rev. 1.3
BCD Semiconductor Manufacturing Limited
5
Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT
AH211
Magnetic Characteristics (Continued)
+14V
AH211
S
DO
DOB GND
FG
Marking Side
1
2
4
3
FG (VFG
)
R1
1kΩ
R2
DO (VOUT1
)
1kΩ
DOB (VOUT2
)
R3
N
1kΩ
C1
C2
C3
10pF 10pF 10pF
Figure 4. Basic Test Circuit
DO (V)
16
DOB (V)
16
VCC
VCC
14
12
10
8
14
12
10
8
6
6
4
4
2
2
VSAT
VSAT
-40
-20
0
20
40
-40
-20
0
20
40
Magnetic Flux Density B (Gauss)
Magnetic Flux Density B (Gauss)
Figure 5. VDO vs. Magnetic Flux Density
Figure 6. VDOB vs. Magnetic Flux Density
Mar. 2007 Rev. 1.3
BCD Semiconductor Manufacturing Limited
6
Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT
AH211
Typical Performance Characteristics
80
8
7
60
40
20
6
5
4
3
2
1
0
BOP
BRP
BHYS
0
-20
-40
-60
0
2
4
6
8
10
12
14
16
18
20
22
24
4.0
6.0
8.0
10.0
12.0
14.0
16.0
VCC (V)
VCC (V)
Figure 7. ICC vs. VCC
Figure 8. BOP/BRP/BHYS vs. VCC
80
60
40
20
0
800
600
400
200
0
BOP
BRP
BHYS
-20
-40
-60
-20
-10
0
10
20
30
40
50
60
70
80
-25
0
25
50
75
100
125
150
TA (oC)
TA (oC)
Figure 9. BOP/BRP/BHYS vs. Ambient Temperature
Figure 10. PD vs. Ambient Temperature
Mar. 2007 Rev. 1.3
BCD Semiconductor Manufacturing Limited
7
Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT
AH211
Typical Performance Characteristics (Continued)
1200
1100
1000
900
12
11
10
9
PIN2
PIN3
VCC=14V
IO=300mA
IO=400mA
VCC=14V
8
7
6
800
5
4
700
3
2
600
1
500
-20.0
0
0.0
20.0
40.0
60.0
80.0
-20.0
0.0
20.0
40.0
60.0
80.0
Ambient Temparature (oC)
Ambient Temparature (oC)
Figure 11. Supply Current vs. Ambient Temperature
Figure 12. VSAT vs. Ambient Temperature
Mar. 2007 Rev. 1.3
BCD Semiconductor Manufacturing Limited
8
Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT
AH211
Application Information
Figure 13 is the typical application circuit for AH211. According AH211's specification, if V =5V, R1 must
DD
Usually, there are three wires for fan connection: the
red is input of power supply; the yellow is the output of
FG; the black is the ground. R1 is an external pull-up
resister for the use of measuring FG signal from fan.
The value of R1 could be decided by the transistor
saturation voltage (V ), sink current (I ), and pull-
be larger than 220Ω.
D1 is the reverse protection diode. If the red and black
wires reversely connected, the current will flow from
the ground via IC and coils L1 and L2 to power supply.
Under such circumstances, the IC and coils are easy to
be burned out. Therefore, the reverse protection diode
D1is necessary. However, D1 will also cause an extra
voltage drop on the supply voltage.
ON
FG
up voltage (V ). The calculation formula is:
DD
R1=(V -V ) / I
DD ON
FG
C1 is a capacitor to reduce the ripple noise caused by
the transient of the output stages. The amplitude of the
ripple noise depends on the coil impedance and its
characteristics.
For example:
V
=5V for TTL level.
DD
If saturation voltage is 0.6V (IC specification)
=20mA ( ≤20mA) , then R1=220Ω ;
I
FG
If saturation voltage is 0.1V, I =1mA (=<20mA) , the
FG
value of R1=4.9kΩ
D1
VCC (Red Wire)
AH211
C1
COIL1
COIL2
FG DO DOB GND
1
2
4
3
VDD
R1 1kΩ
FG (Yellow Wire)
GND (Black Wire)
Figure 13. AH211 Typical Application Circuit
Mar. 2007 Rev. 1.3
BCD Semiconductor Manufacturing Limited
9
Data Sheet
TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT
AH211
Mechanical Dimensions
TO-94
Unit: mm(inch)
45°TYP
3.780(0.149)
0.500(0.020)
4.080(0.161)
0.700(0.028)
1.400(0.055)
1.800(0.071)
4.980(0.196)
5.280(0.208)
0.360(0.014)
0.510(0.020)
0.700(0.028)
0.900(0.035)
1.850(0.073)
1.250(0.050)
0.380(0.015)
0.550(0.022)
Hall Sensor Location
0.360(0.014)
0.500(0.020)
14.900(0.587)
15.300(0.602)
1.270(0.050) TYP
3.710(0.146)
3.910(0.154)
Mar. 2007 Rev. 1.3
BCD Semiconductor Manufacturing Limited
10
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cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
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