APD245VGTR-E1 [BCDSEMI]
SCHOTTKY BARRIER RECTIFIERS DC-DC Converters; 肖特基势垒整流器的DC -DC转换器
| 型号： | APD245VGTR-E1 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | SCHOTTKY BARRIER RECTIFIERS DC-DC Converters |
| 文件： | 总9页 (文件大小：556K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
SCHOTTKY BARRIER RECTIFIERS
APD245
Features
Applications
·
Low Forward Voltage Drop
·
Low Voltage High Frequency Inverters
·
·
·
Very Small Conduction Losses
High Surge Capability
Surge Overload Rating up to 50A Peak Value
·
·
·
DC-DC Converters
Free Wheeling
Polarity Protection
DO-41
DO-15
DO-214AC
Figure 1. Package Types of APD245
Pin Configuration
VD/VG Package
(DO-41/DO-15)
VR Package
(DO-214AC)
Cathode line by
marking
Cathode line by
marking
Cathode
Anode
Cathode
Anode
Figure 2. Pin Configuration of APD245
BCD Semiconductor Manufacturing Limited
Aug. 2011 Rev 1. 2
1
Data Sheet
SCHOTTKY BARRIER RECTIFIERS
APD245
Ordering Information
APD245
-
Circuit Type
E1: Lead Free
G1: Green
Ammo or Tape & Reel
Blank: Bulk
TR:
Package
VD: DO-41
VG: DO-15
VR: DO-214AC
Part Number
Lead Free
APD245VD-E1
Marking ID
Temperature
Range
Package
Packing Type
Green
Lead Free
D245VD
Green
245VDG
245VDG
245VGG
245VGG
245VRG
APD245VD-G1
Bulk
Ammo
-65 to 125oC
DO-41
APD245VDTR-E1 APD245VDTR-G1 D245VD
APD245VG-E1 APD245VG-G1 D245VG
Bulk
-65 to 125oC
-65 to 125oC
DO-15
APD245VGTR-E1 APD245VGTR-G1 D245VG
APD245VRTR-G1
Ammo
DO-214AC
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Aug. 2011 Rev 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
SCHOTTKY BARRIER RECTIFIERS
APD245
o
Absolute Maximum Ratings (T =25 C, unless otherwise noted) (Note 1)
A
Parameter
Symbol
Value
45
Unit
V
Maximum Repetitive Peak Reverse Voltage
VRRM
Maximum DC Blocking Voltage
Maximum RMS Voltage
VDC
45
V
VRMS
32
V
Average Rectified Forward Current
0.375 " (9.5mm) Lead Length
IF (AV)
2.0
50
A
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave on Rated Load
IFSM
oC
oC
Operating Junction Temperature Range
Storage Temperature Range
TJ
-65 to 125
-65 to 150
TSTG
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Aug. 2011 Rev 1. 2
BCD Semiconductor Manufacturing Limited
3
Data Sheet
SCHOTTKY BARRIER RECTIFIERS
APD245
o
Thermal Characteristics (T =25 C, unless otherwise noted)
A
Parameter
Symbol
DO-41/DO-15
DO-214AC
Values
52
Unit
oC/W
θJA
Typical Thermal Resistance
90
o
Electrical Characteristics (T =25 C, unless otherwise noted)
A
Parameter
Symbol
Values
0.5
Unit
Forward Voltage @ IF=2.0A
VF
V
o
0.5
TA=25 C
Reverse Current @ Rated VR (Note 2)
IR
mA
o
10
TA=100 C
Note 2: Pulse Test: 300µs pulse width, 1.0% duty cycle.
o
Typical Performance Characteristics (T =25 C, unless otherwise noted)
A
2.5
10
2.0
1.5
1
1.0
0.5
0.1
TJ=25oC
TJ=125oC
0.0
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Ambient Temperature (oC)
Instantaneous Forward Voltage (V)
Figure 3. Forward Current Derating Curve
Figure 4. Typical Instantaneous Forward Characteristics
Aug. 2011 Rev 1. 2
BCD Semiconductor Manufacturing Limited
4
Data Sheet
SCHOTTKY BARRIER RECTIFIERS
APD245
Typical Performance Characteristics (Continued)
50
10000
45
40
1000
35
30
100
25
20
10
TJ=25oC
TJ=TJ(max)
15
TJ=125oC
Single Half Sine-Wave
10
1
1
10
100
0
10
20
30
40
Peak Reverse Voltage (V)
Number of Cycle at 60Hz
Figure 5. Maximum Non-Repetitive
Peak Forward Surge Current
Figure 6. Typical Reverse Characteristics
100
TJ=25oC
f=1.0mHz
V
SIG=50mVp-p
10
0.1
1
10
Reverse Voltage (V)
Figure 7. Typical Junction Capacitance
Aug. 2011 Rev 1. 2
BCD Semiconductor Manufacturing Limited
5
Data Sheet
SCHOTTKY BARRIER RECTIFIERS
APD245
Mechanical Dimensions
DO-41
Unit: mm(inch)
0.700(0.028)
0.900(0.035)
25.400(1.000) MIN
DIA.
4.200(0.165)
5.200(0.205)
Cathode line
by marking
2.000(0.080)
2.700(0.107)
DIA.
25.400(1.000) MIN
Aug. 2011 Rev 1. 2
BCD Semiconductor Manufacturing Limited
6
Data Sheet
SCHOTTKY BARRIER RECTIFIERS
APD245
Mechanical Dimensions (Continued)
DO-15
Unit: mm(inch)
0.700(0.028)
0.900(0.035)
25.400(1.000) MIN
DIA.
Cathode line
by marking
5.800(0.228)
7.600(0.299)
2.600(0.102)
3.600(0.142)
DIA.
25.400(1.000) MIN
Aug. 2011 Rev 1. 2
BCD Semiconductor Manufacturing Limited
7
Data Sheet
SCHOTTKY BARRIER RECTIFIERS
APD245
Mechanical Dimensions (Continued)
DO-214AC
Unit: mm(inch)
3.990(0.157)
4.600(0.181)
Cathode line by
marking
0.152(0.006)
0.305(0.012)
1.900(0.075)
2.290(0.090)
0.100(0.004)
0.310(0.012)
0.760(0.030)
1.520(0.060)
4.800(0.189)
5.280(0.208)
Aug. 2011 Rev 1. 2
BCD Semiconductor Manufacturing Limited
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BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
- Headquarters
- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-24162266, Fax: +86-21-24162277
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Shenzhen Office
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Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
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BCD Semiconductor Corp.
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
30920 Huntwood Ave. Hayward,
China
Taiwan
Tel: +886-2-2656 2808
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Tel : +1-510-324-2988
Fax: +86-755-8826 7865
Fax: +886-2-2656 2806
Fax: +1-510-324-2788
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