AS358MM-E1 [BCDSEMI]
LOW POWER DUAL OPERATIONAL AMPLIFIERS; 低功耗双运算放大器
| 型号： | AS358MM-E1 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | LOW POWER DUAL OPERATIONAL AMPLIFIERS |
| 文件： | 总15页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
General Description
Features
The AS358/358A consist of two independent, high
gain and internally frequency compensated operational
amplifiers, they are specifically designed to operate
from a single power supply. Operation from split
power supply is also possible and the low power sup-
ply current drain is independent of the magnitude of
the power supply voltages. Typical applications
include transducer amplifiers, DC gain blocks and
most conventional operational amplifier circuits.
·
Internally Frequency Compensated for Unity
Gain
·
·
·
·
·
Large Voltage Gain: 100dB (Typical)
Low Input Bias Current: 20nA (Typical)
Low Input Offset Voltage: 2mV (Typical)
Low Supply Current: 0.5mA (Typical)
Wide Power Supply Voltage:
Single Supply: 3V to 36V
Dual Supplies: ±1.5V to ±18V
Input Common Mode Voltage Range Includes
Ground
·
·
The AS358/358A series are compatible with industry
standard 358. AS358A has more stringent input offset
voltage than AS358.
Large Output Voltage Swing: 0V to V -1.5V
CC
The AS358 is available in DIP-8, SOIC-8, TSSOP-8
and MSOP-8 packages, AS358A is available in DIP-8
and SOIC-8 packages.
Applications
·
·
·
Battery Charger
Cordless Telephone
Switching Power Supply
SOIC-8
DIP-8
TSSOP-8
MSOP-8
Figure 1. Package Types of AS358/358A
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Pin Configuration
M/P/G/MM Package
(SOIC-8/DIP-8/TSSOP-8/MSOP-8)
OUTPUT 1
1
8
VCC
INPUT 1-
INPUT 1+
GND
2
3
4
7
6
5
OUTPUT 2
INPUT 2-
INPUT 2+
Figure 2. Pin Configuration of AS358/358A (Top View)
Functional Block Diagram
VCC
6µA
4µA
100µA
Q5
Q6
Q2
Q3
Cc
Q7
-
Q4
Q1
Rsc
OUTPUT
INPUTS
+
Q11
Q13
Q10
Q12
50µA
Q8
Q9
Figure 3. Functional Block Diagram of AS358/358A
(Each Amplifier)
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Ordering Information
-
AS358
E1: Lead Free
Blank: Tin Lead
Circuit Type
TR: Tape and Reel
Blank: Tube
Package
Blank: AS358
A: AS358A
M: SOIC-8
P: DIP-8
G: TSSOP-8
MM: MSOP-8
Part Number
Marking ID
Temperature
Range
Package
Packing Type
Tin Lead
AS358M
Lead Free
AS358M-E1
Tin Lead
Lead Free
AS358M-E1
AS358M-E1
AS358AM-E1
AS358AM-E1
AS358P-E1
AS358AP-E1
EG3A
AS358M
AS358M
Tube
Tape & Reel
Tube
AS358MTR
AS358MTR-E1
AS358AM-E1
AS358AMTR-E1
AS358P-E1
-40 to 85oC
SOIC-8
Tape & Reel
Tube
AS358P
AS358P
-40 to 85oC
-40 to 85oC
-40 to 85oC
DIP-8
AS358AP-E1
AS358G-E1
Tube
Tube
TSSOP-8
MSOP-8
AS358GTR-E1
AS358MM-E1
AS358MMTR-E1
EG3A
Tape & Reel
Tube
AS358MM-E1
AS358MM-E1
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
40
Unit
V
VCC
Power Supply Voltage
Differential Input Voltage
Input Voltage
VID
VIC
40
V
-0.3 to 40
V
DIP-8
SOIC-8
830
550
500
470
PD
Power Dissipation (TA=25oC)
mW
TSSOP-8
MSOP-8
oC
oC
oC
TJ
Operating Junction Temperature
Storage Temperature Range
150
-65 to 150
260
TSTG
TLEAD
Lead Temperature (Soldering, 10 Seconds)
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
VCC
Min
3
Max
36
Unit
V
Supply Voltage
oC
Ambient Operating Temperature Range
TA
-40
85
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Electrical Characteristics
Limits in standard typeface are for TA=25oC, bold typeface applies over -40oC to 85oC (Note 2), VCC=5V, GND=0V, unless
otherwise specified.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
2
5
7
3
5
AS358
VO=1.4V, RS=0Ω,
VCC=5V to 30V
VIO
Input Offset Voltage
mV
2
AS358A
Average Temperature Coeffi-
cient of Input Offset Voltage
TA=-40 to 85oC
µV/oC
∆VIO/∆T
7
20
200
200
30
IBIAS
IIN+ or IIN-, VCM=0V
Input Bias Current
Input Offset Current
nA
5
IIO
VIR
ICC
IIN+ - IIN-, VCM=0V
VCC=30V
nA
V
100
Input Common Mode Voltage
Range (Note 3)
V
-1.5
0
CC
TA=-40 to 85oC, RL=∞, VCC=30V
TA=-40 to 85oC, RL=∞, VCC=5V
0.7
0.5
2
Supply Current
mA
1.2
85
80
60
60
70
60
100
GV
VCC=15V, VO=1V to 11V, RL ≥ 2kΩ
Large Signal Voltage Gain
dB
dB
70
Common Mode Rejection
Ratio
DC, VCM=0V to (VCC-1.5)V
CMRR
100
Power Supply Rejection
Ratio
VCC=5V to 30V
PSRR
CS
dB
dB
Channel Separation
Source
f=1kHz to 20kHz
-120
40
20
20
10
5
ISOURCE VIN+=1V, VIN-=0V, VCC=15V, VO=2V
mA
15
Output Current
Sink
VIN+=0V, VIN-=1V, VCC=15V, VO=2V
ISINK
mA
V
IN+=0V,VIN-=1V,VCC=15V, VO=0.2V
12
50
40
µA
Output Short Circuit Current
to Ground
ISC
VCC=15V
60
mA
26
26
27
27
VCC=30V, RL=2kΩ
VOH
V
28
5
VCC=30V, RL=10kΩ
Output Voltage Swing
20
VOL
VCC=5V, RL= 10kΩ
mV
30
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.
Sep. 2006 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Electrical Characteristics (Continued)
Note 3: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by
more than 0.3V (at 25oC). The upper end of the common-mode voltage range is V -1.5V (at 25oC), but either or
CC
both inputs can go to +36V without damages, independent of the magnitude of the V
.
CC
Typical Performance Characteristics
15
10
5
20
18
16
14
12
10
8
NEGATIVE
POSITIVE
6
4
2
0
0
0
5
10
15
-25
0
25
50
75
100
125
Temperature (oC)
Power Supply Voltage (+VDC
)
Figure 4. Input Voltage Range
Figure 5. Input Current
120
105
90
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
RL=2KΩ
RL=20KΩ
75
60
0
8
16
24
32
40
0
5
10
15
20
25
30
35
40
Supply Voltage (V)
Power Supply Voltage (V)
Figure 6. Supply Current
Sep. 2006 Rev. 1. 6
Figure 7. Voltage Gain
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Typical Performance Characteristics (Continued)
4
3
2
120
110
100
90
80
70
60
50
40
30
20
10
0
1
0
3
2
1
0
1
10
100
1k
10k
100k
1M
0
4
8
12 16 20 24 28 32 36 40
Frequency (Hz)
Time (µs)
Figure 8. Open Loop Frequency Response
Figure 9. Voltage Follower Pulse Response
20
800
700
600
15
10
5
500
400
300
200
100
0
1k
10k
100k
1M
0
4
16
20
8
12
Frequency (Hz)
Time (µs)
Figure 10. Voltage Follower Pulse Response
(Small Signal)
Figure 11. Large Signal Frequency Response
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Typical Performance Characteristics (Continued)
10
8
7
6
5
4
3
2
1
0
1
VCC=5V
VCC=15V
0.1
0.01
1E-3
0.01
0.1
1
10
100
0.1
1
10
100
Output Sink Current (mA)
Output Source Current (mA)
Figure 12. Output Characteristics: Current Sourcing
Figure 13. Output Characteristics: Current Sinking
100
90
80
70
60
50
40
30
20
10
0
-25
0
25
50
75
100
125
Temperature (oC)
Figure 14. Current Limiting
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Typical Application
R1
Opto
Isolator
R6
-
VCC
1/2
AS358/A
Battery
Pack
AC
Line
SMPS
+
GND
R7
R3
R4
R5
VCC
Current
Sense
-
R2
1/2
AS358/A
+
GND
AZ431
R8
Figure 15. Battery Charger
R1 910K
R1 100k
+V1
+V2
R2 100K
R3 91K
+
-
VCC
R5
100k
R2 100k
R3 100k
1/2 AS358/A
-
VO
1/2 AS358/A
+
VO
VIN(+)
R6 100k
+V3
RL
+V4
R4 100k
Figure 16. Power Amplifier
Figure 17. DC Summing Amplifier
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Typical Application (Continued)
VCC
R2 1M
R1 100k
+
+
2V
-
C1
0.1µF
R3
2K
R1
2K
R2
2V
-
-
CO
VO
1/2 AS358/A
RB
6.2k
RL
10k
+
-
CIN
AC
R3
1M
1/2 AS358/A
+
R4 100k
VCC
AV=1+R2/R1
AV=11 (As shown)
I1
1mA
I2
R5
100k
R4
3K
C2
10µF
Figure 19. Fixed Current Sources
Figure 18. AC Coupled Non-Inverting Amplifier
R1 1M
C1 0.01µF
R2 100k
0.001µF
R1 16K R2 16k
+
-
VIN
C2
0.01µF
1/2 AS358/A
VO
1/2 AS358/A
+
VO
R3
100k
-
VO
R3 100k
R5 100k
VCC
R4
100k
fO
0
R4
100k
fO=1kHz
Q=1
AV=2
Figure 21. DC Coupled Low-Pass Active Filter
Figure 20. Pulse Generator
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Mechanical Dimensions
DIP-8
Unit: mm(inch)
0.700(0.028)
7.620(0.300)TYP
5°
1.524(0.060) TYP
6°
3.200(0.126)
3.600(0.142)
3.710(0.146)
4.310(0.170)
0.510(0.020)MIN
3.000(0.118)
3.600(0.142)
0.204(0.008)
0.360(0.014)
0.254(0.010)TYP
8.200(0.323)
9.400(0.370)
2.540(0.100)TYP
0.130(0.005)MIN
0.360(0.014)
0.560(0.022)
6.200(0.244)
6.600(0.260)
R0.750(0.030)
Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
9.000(0.354)
9.400(0.370)
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Mechanical Dimensions (Continued)
SOIC-8
Unit: mm(inch)
4.700(0.185)
0.320(0.013)
1.350(0.053)
1.750(0.069)
5.100(0.201)
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
6.200(0.244)
1.270(0.050)
TYP
D
20:1
φ
0.800(0.031)
0.200(0.008)
0.100(0.004)
0.300(0.012)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
1°
5°
0.330(0.013)
0.510(0.020)
0.900(0.035)
6)
00
(0.
50
.1
R0
0.190(0.007)
0.250(0.010)
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Mechanical Dimensions (Continued)
TSSOP-8
Unit: mm(inch)
SEE DETAIL A
2.900(0.114)
3.100(0.122)
0.050(0.002)
0.150(0.006)
0.090(0.004)
0.200(0.008)
1.200(0.047)
MAX
0.800(0.031)
1.050(0.041)
12 °
TOP & BOTTOM
R0.090(0.004)
R0.090(0.004)
GAGE PLANE
0°
8°
0.450(0.018)
0.750(0.030)
SEATING
PLANE
1.000(0.039)
REF
0.190(0.007)
0.300(0.012)
0.250(0.010)
TYP
1.950(0.077)
TYP
DETAIL A
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Mechanical Dimensions
MSOP-8
Unit: mm(inch)
0.300(0.012)TYP
0.650(0.026)TYP
0°
6°
0.760(0.030)
0.970(0.038)
0.800(0.031)
1.200(0.047)
2.900(0.114)
3.100(0.122)
`
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
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