AZ324_06 [BCDSEMI]

LOW POWER QUAD OPERATIONAL AMPLIFIERS; 低功耗四路运算放大器
AZ324_06
型号: AZ324_06
厂家: BCD SEMICONDUCTOR MANUFACTURING LIMITED    BCD SEMICONDUCTOR MANUFACTURING LIMITED
描述:

LOW POWER QUAD OPERATIONAL AMPLIFIERS
低功耗四路运算放大器

运算放大器
文件: 总13页 (文件大小:269K)
中文:  中文翻译
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Data Sheet  
LOW POWER QUAD OPERATIONAL AMPLIFIERS  
AZ324  
General Description  
Features  
The AZ324 consists of four independent, high gain and  
internally frequency compensated operational amplifi-  
ers. It is specifically designed to operate from a single  
power supply. Operation from split power supply is  
also possible and the low power supply current drain is  
independent of the magnitude of the power supply  
voltages.  
·
Internally Frequency Compensated for Unity  
Gain  
·
·
·
·
·
Large Voltage Gain: 100dB (Typical)  
Low Input Bias Current: 20nA (Typical)  
Low Input Offset Voltage: 2mV (Typical)  
Low Supply Current: 0.5mA (Typical)  
Wide Power Supply Voltage Range:  
Single Supply: 3V to 18V  
Dual Supplies: ±1.5V to ±9V  
Input Common Mode Voltage Range Includes  
Ground  
The AZ324 series are compatible with industry stan-  
dard 324.  
·
The AZ324 series are available in 2 Packages: DIP-14  
and SOIC-14.  
·
·
Large Output Voltage Swing: 0V to V -1.5V  
CC  
Power Drain Suitable for Battery Operation  
Applications  
·
·
·
Battery Charger  
Cordless Telephone  
Switching Power Supply  
DIP-14  
SOIC-14  
Figure 1. Package Types of AZ324  
Aug. 2006 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
1
Data Sheet  
LOW POWER QUAD OPERATIONAL AMPLIFIERS  
AZ324  
Pin Configuration  
M Package/P Package  
(SOIC-14/DIP-14)  
OUTPUT 1  
INPUT 1-  
INPUT 1+  
VCC  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
OUTPUT 4  
INPUT 4-  
INPUT 4+  
GND  
INPUT 2+  
INPUT 2-  
OUTPUT 2  
INPUT 3+  
INPUT 3-  
OUTPUT 3  
8
Top View  
Figure 2. Pin Configuration of AZ324  
Functional Block Diagram  
VCC  
6µA  
4µA  
100µA  
Q5  
Q6  
Q2  
Q3  
Cc  
Q7  
Q4  
INPUT-  
INPUT+  
Q1  
Rsc  
OUTPUT  
Q11  
Q13  
Q10  
Q12  
50µA  
Q8  
Q9  
Figure 3. Functional Block Diagram of AZ324  
(Each Amplifier)  
Aug. 2006 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
2
Data Sheet  
LOW POWER QUAD OPERATIONAL AMPLIFIERS  
AZ324  
Ordering Information  
AZ324  
-
E1: Lead Free  
Blank: Tin Lead  
Circuit Type  
TR: Tape and Reel  
Blank: Tube  
Package  
M: SOIC-14  
P: DIP-14  
Part Number  
Marking ID  
Temperature  
Package  
Packing Type  
Range  
Tin Lead  
AZ324M  
Lead Free  
AZ324M-E1  
AZ324MTR-E1  
AZ324P-E1  
Tin Lead  
Lead Free  
AZ324M-E1  
AZ324M-E1  
AZ324P-E1  
AZ324M  
AZ324M  
AZ324P  
Tube  
Tape & Reel  
Tube  
-40 to 85 oC  
-40 to 85 oC  
SOIC-14  
DIP-14  
AZ324MTR  
AZ324P  
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.  
Aug. 2006 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
3
Data Sheet  
LOW POWER QUAD OPERATIONAL AMPLIFIERS  
AZ324  
Absolute Maximum Ratings (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Power Supply Voltage  
V
20  
V
CC  
Differential Input Voltage  
Input Voltage  
V
V
20  
V
V
ID  
IC  
-0.3 to 20  
50  
Input Current (V <-0.3V) (Note 2)  
mA  
IN  
Output Short Circuit to Ground (One  
Continuous  
o
Amplifier) V 12V and T =25 C  
CC  
A
(Note 3)  
DIP  
1130  
800  
Power Dissipation (TA=25oC)  
P
mW  
D
SOIC  
o
Operating Junction Temperature  
Storage Temperature Range  
T
150  
-65 to 150  
260  
J
C
o
T
STG  
C
o
Lead Temperature (Soldering, 10 Seconds)  
T
LEAD  
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the  
device. These are stress ratings only, and functional operation of the device under these conditions is not implied.  
Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.  
Note 2: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to  
the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode  
clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This  
transistor action can cause the output voltages of the op amps to go to the V voltage level (or to ground for a  
CC  
large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output  
states will re-establish when the input voltage, which was negative, again returns to a value greater than -0.3V (at  
o
25 C)  
Note 3: Short circuits from the output to V can cause excessive heating and eventual destruction. When consid-  
CC  
ering short circuits to ground, the maximum output current is approximately 40mA independent of the magnitude  
of V . At values of supply voltage in excess of +12V, continuous short circuits can exceed the power dissipation  
CC  
ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifi-  
ers.  
Recommended Operating Conditions  
Parameter  
Symbol  
VCC  
Min  
3
Max  
18  
Unit  
V
Supply Voltage  
oC  
Ambient Operating Temperature Range  
TA  
-40  
85  
Aug. 2006 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
4
Data Sheet  
LOW POWER QUAD OPERATIONAL AMPLIFIERS  
AZ324  
Electrical Characteristics  
o
Operating Conditions: V =5V, GND=0V, T =25 C unless otherwise specified.  
CC  
A
Parameter  
Symbol  
Test Conditions  
V =1.4V, R =0, V =5V to 15V  
Min  
Typ  
Max  
Unit  
Input Offset Voltage  
VIO  
2
5
mV  
O
S
CC  
Input Bias Current  
(Note 4)  
20  
200  
nA  
IBIAS  
IIO  
IIN+ or IIN-, VCM=0V  
IIN+ - IIN-, VCM=0V  
VCC=15V  
Input Offset Current  
5
50  
nA  
V
Input Common Mode Volt-  
age Range (Note 5)  
V
-1.5  
VIR  
0
CC  
RL=∞, Over full temperature  
range on all OP Amps  
1
2
VCC=15V  
CC=5V  
ICC  
Supply Current  
mA  
dB  
0.5  
100  
1.2  
V
85  
Large Signal  
Voltage Gain  
GV  
CMRR DC, VCC=15V, VCM=0V to (VCC-1.5)V  
VCC=15V, RL≥ 2kΩ, VO=1V to 11V  
Common Mode Rejection  
Ratio  
65  
70  
85  
90  
dB  
dB  
dB  
Power Supply Rejection  
Ratio  
PSRR  
CS  
VCC=5V to 15V  
Channel Separation  
(Note 6)  
-120  
f=1KHz to 20KHz (Input Referred)  
Source  
ISOURCE VIN+=1V, VIN-=0V, VCC=15V, VO=2V  
20  
10  
12  
45  
20  
50  
45  
mA  
mA  
µA  
Output Current  
VIN+=0V, VIN-=1V, VCC=15V, VO=2V  
ISINK  
Sink  
VIN+=0V,VIN-=1V, VCC=15V, VO=0.2V  
Output Short Circuit  
to Ground  
60  
20  
mA  
ISC  
VCC=15V  
12  
VCC=15V, RL=2kΩ  
VCC=15V, RL=10kΩ  
VOH  
VOL  
V
12.5  
13.5  
5
Output Voltage Swing  
mV  
VCC=5V, RL=10kΩ  
Note 4: The direction of the input current is out of the IC due to the PNP input stage. This current is essentially  
constant, independent of the state of the output so no loading change exists on the input lines.  
Note 5: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by  
o
o
more than 0.3V (at 25 C). The upper end of the common-mode voltage range is  
-1.5V (at 25 C), but either or  
VCC  
both inputs can go to +18V without damages, independent of the magnitude of the V  
.
CC  
Note 6: Due to proximity of external components, insure that coupling is not originating via stray capacitors  
between these external parts. This typically can be detected as this type of capacitance increases at higher frequen-  
cies.  
Aug. 2006 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
5
Data Sheet  
LOW POWER QUAD OPERATIONAL AMPLIFIERS  
AZ324  
Typical Performance Characteristics  
8
7
6
5
4
3
2
1
0
30  
25  
20  
15  
10  
5
VCC=15V  
NEGATIVE  
POSITIVE  
0
-40  
0
2
4
6
8
-20  
0
20  
40  
60  
80  
100  
120  
o
Power Supply Voltage (±V  
)
Temperature ( C)  
DC  
Figure 4. Input Voltage Range  
Figure 5. Input Current  
120  
110  
100  
90  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VCC  
ID  
mA  
A
RL=2KΩ  
RL=20KΩ  
80  
TA = 0oC TO 85oC  
70  
60  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
Power Supply Voltage (V)  
Power Supply Voltage (V)  
Figure 6. Supply Current  
Figure 7. Voltage Gain  
Aug. 2006 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
6
Data Sheet  
LOW POWER QUAD OPERATIONAL AMPLIFIERS  
AZ324  
Typical Performance Characteristics (Continued)  
110  
100  
V
=15V  
CC  
R =2KΩ  
L
TA: -40oC TO 85oC VCC:10V TO 15VDC  
90  
80  
70  
60  
50  
R
10M  
40  
30  
20  
10  
0
0.1uF  
VCC  
VO  
VCC/2  
VIN  
1
10  
100  
1k  
10k  
100k  
1M  
Frequency (Hz)  
Time (µS)  
Figure 8. Open Loop Frequency Response  
Figure 9. Voltage Follower Pulse Response  
20  
R
100K  
VOUT  
+15  
VDC  
o
T =25 C  
R
1K  
A
15  
10  
5
VO  
V
IN  
50pF  
V
15V  
+7VDC  
CC=  
VIN  
R
2K  
0
1K  
10K  
100K  
1M  
Time (µS)  
Frequency (Hz)  
Figure 10. Voltage Follower Pulse Response  
(Small Signal)  
Figure 11. Large Signal Frequency Response  
Aug. 2006 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
7
Data Sheet  
LOW POWER QUAD OPERATIONAL AMPLIFIERS  
AZ324  
Typical Performance Characteristics (Continued)  
10  
8
VCC  
7
VCC/2  
Vo  
6
1
IO  
5
VCC  
4
IO  
VCC/2  
VCC=+15V  
VCC=+5V  
0.1  
Vo  
3
2
INDEPENDENT OF VCC, TA = 25oC  
0.01  
1E-3  
1
1E-3  
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
Output Sink Current (mA)  
Output Source Current (mA)  
Figure 13. Output Characteristics Current Sinking  
Figure 12. Output Characteristics Current Sourcing  
100  
90  
IO  
80  
70  
60  
50  
40  
30  
20  
10  
0
-40  
-20  
0
20  
40  
o
60  
80  
Temperature ( C)  
Figure 14. Current Limiting  
Aug. 2006 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
8
Data Sheet  
LOW POWER QUAD OPERATIONAL AMPLIFIERS  
AZ324  
Typical Applications  
R1  
Opto  
Isolator  
R6  
-
1/4 AZ324  
GND  
Battery  
Pack  
AC  
Line  
SMPS  
+
R7  
R4  
R5  
R3  
VCC  
Current  
Sense  
-
R2  
1/4 AZ324  
+
GND  
AZ431  
R8  
Figure 15. Battery Charger  
R1 910K  
R1 100K  
+V1  
R2 100K  
R3 91K  
+
-
VCC  
+V2  
R5  
100K  
R2 100K  
R3 100K  
VO  
1/4 AZ324  
-
1/4 AZ324  
+
VO  
VIN(+)  
R6 100K  
+V3  
+V4  
RL  
R4 100K  
Figure 16. DC Summing Amplifier  
Figure 17. Power Amplifier  
Aug. 2006 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
9
Data Sheet  
LOW POWER QUAD OPERATIONAL AMPLIFIERS  
AZ324  
Typical Applications (Continued)  
VCC  
R2 1M  
R1 100k  
+
+
2V  
-
R3  
2K  
R1  
2K  
C1  
0.1µF  
R2  
2V  
-
-
CO  
VO  
1/4 AZ324  
RB  
6.2k  
RL  
10k  
+
-
CIN  
AC  
R3  
1M  
1/4 AZ324  
+
R4 100k  
VCC  
AV=1+R2/R1  
AV=11 (As shown)  
I1  
1mA  
I2  
R5  
100k  
R4  
3K  
C2  
10µF  
Figure 18. Fixed Current Sources  
Figure 19. AC Coupled Non-Inverting Amplifier  
R1 1M  
C1 0.01µF  
R2 100K  
0.001µF  
R1 16K R2 16K  
-
+
VIN  
C2  
0.01µF  
1/4 AZ324  
+
VO  
1/4 AZ324  
-
VO  
R3  
100k  
V0  
R3 100K  
R5 100K  
VCC  
R4  
100k  
f0  
0
R4  
100K  
fo=1KHz  
Q=1  
AV=2  
Figure 21. DC Coupled Low-Pass RC Active Filter  
Figure 20. Pulse Generator  
Aug. 2006 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
10  
Data Sheet  
LOW POWER QUAD OPERATIONAL AMPLIFIERS  
AZ324  
Mechanical Dimensions  
DIP-14  
Unit: mm(inch)  
0.700(0.028)  
7.620(0.300)TYP  
5°  
1.524(0.060) TYP  
1.600(0.063)  
1.800(0.071)  
10°  
4°  
10°  
4°  
Φ3.000(0.118)  
Depth  
0.100(0.004)  
0.200(0.008)  
0.204(0.008)  
0.360(0.014)  
0.254(0.010)  
2.540(0.100)TYP  
3.000(0.118)  
0.360(0.014)  
0.560(0.022)  
8.200(0.323)  
9.400(0.370)  
3.600(0.142)  
1.600(0.063)  
1.800(0.071)  
0.510(0.020)MIN  
0.130(0.005)MIN  
6.200(0.244)  
6.600(0.260)  
18.800(0.740)  
19.200(0.756)  
R1.000(0.039)  
Aug. 2006 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
11  
Data Sheet  
LOW POWER QUAD OPERATIONAL AMPLIFIERS  
AZ324  
Mechanical Dimensions (Continued)  
SOIC-14  
Unit: mm(inch)  
0.280(0.011)  
0.480(0.019)×45°  
×45°  
A
0.700(0.028)  
0.100(0.004)  
0.250(0.010)  
0°  
8°  
8.550(0.337)  
8.750(0.344)  
3.800(0.150)  
4.000(0.157)  
0.330(0.013)  
0.510(0.020)  
1.270(0.050)  
A
0.250(0.010)  
20:1  
0.200(0.008)M  
IN  
R0.200(0.008)  
R0.200(0.008)  
0.500(0.020)  
0.600(0.024)  
0.250(0.010)  
φ
2.000(0.079)  
Depth 0.060(0.002)  
0.100(0.004)  
Aug. 2006 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
12  
http://www.bcdsemi.com  
IMPORTANT NOTICE  
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-  
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any  
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use  
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or  
other rights nor the rights of others.  
MAIN SITE  
BCD Semiconductor Manufacturing Limited  
BCD Semiconductor Manufacturing Limited  
- Wafer Fab  
- IC Design Group  
Shanghai SIM-BCD Semiconductor Manufacturing Limited  
800, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
Advanced Analog Circuits (Shanghai) Corporation  
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
USA Office  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office  
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27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China  
Tel: +86-755-8368 3987, Fax: +86-755-8368 3166  
BCD Semiconductor (Taiwan) Company Limited  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,  
Taiwan  
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CA 95054-2411, U.S.A  
Tel: +886-2-2656 2808, Fax: +886-2-2656 2806  
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