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AZ358_1 [BCDSEMI]

LOW POWER DUAL OPERATIONAL AMPLIFIERS; 低功耗双运算放大器
AZ358_1
型号： AZ358_1
厂家： BCD SEMICONDUCTOR MANUFACTURING LIMITED    BCD SEMICONDUCTOR MANUFACTURING LIMITED
描述：

LOW POWER DUAL OPERATIONAL AMPLIFIERS
低功耗双运算放大器

运算放大器
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Data Sheet  
LOW POWER DUAL OPERATIONAL AMPLIFIERS  
AZ358/358C  
General Description  
Features  
The AZ358/358C consists of two independent, high  
gain and internally frequency compensated operational  
amplifiers, it is specifically designed to operate from a  
single power supply. Operation from split power sup-  
ply is also possible and the low power supply current  
drain is independent of the magnitude of the power  
supply voltages.  
·
Internally Frequency Compensated for Unity  
Gain  
·
·
·
·
·
Large Voltage Gain: 100dB (Typical)  
Low Input Bias Current: 20nA (Typical)  
Low Input Offset Voltage: 2mV (Typical)  
Low Supply Current: 0.5mA (Typical)  
Wide Power Supply Voltage Range:  
Single Supply: 3V to 18V  
Dual Supplies: ±1.5V to ±9V  
Input Common Mode Voltage Range Includes  
Ground  
The AZ358/358C series are Compatible with Industry  
standard 358. AZ358C has more stringent input offset  
voltage than AZ358.  
·
·
·
Large Output Voltage Swing: 0V to V -1.5V  
The AZ358/358C series are available in standard pack-  
ages of DIP-8 and SOIC-8.  
CC  
Power Drain Suitable for Battery Operation  
Applications  
·
·
·
Battery Charger  
Cordless Telephone  
Switching Power Supply  
SOIC-8  
DIP-8  
Figure 1. Package Types of AZ358/358C  
Aug. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
1
Data Sheet  
LOW POWER DUAL OPERATIONAL AMPLIFIERS  
AZ358/358C  
Pin Configuration  
M Package/P Package  
(SOIC-8/DIP-8)  
OUTPUT 1  
1
8
VCC  
INPUT 1-  
INPUT 1+  
GND  
2
3
4
7
6
5
OUTPUT 2  
INPUT 2-  
INPUT 2+  
Figure 2. Pin Configuration of AZ358/358C (Top View)  
Functional Block Diagram  
VCC  
6µA  
4µA  
100µA  
Q5  
Q6  
Q2  
Q3  
Cc  
Q7  
Q1  
Q4  
INPUT-  
INPUT+  
Rsc  
OUTPUT  
Q11  
Q13  
Q10  
Q12  
50µA  
Q8  
Q9  
Figure 3. Functional Block Diagram of AZ358/358C (Each Amplifier)  
Aug. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
2
Data Sheet  
LOW POWER DUAL OPERATIONAL AMPLIFIERS  
AZ358/358C  
Ordering Information  
AZ358  
-
E1: Lead Free  
Blank: Tin Lead  
Circuit Type  
TR: Tape and Reel  
Blank: Tube  
Blank: AZ358  
C: AZ358C  
Package  
M: SOIC-8  
P: DIP-8  
Part Number  
Marking ID  
Package  
SOIC-8  
DIP-8  
Input Offset Voltage  
Packing Type  
Tin Lead  
AZ358M  
Lead Free  
AZ358M-E1  
Tin Lead  
Lead Free  
AZ358M-E1  
AZ358M-E1  
358CM-E1  
5mV  
5mV  
3mV  
3mV  
5mV  
3mV  
AZ358M  
AZ358M  
358CM  
Tube  
Tape & Reel  
Tube  
AZ358MTR  
AZ358CM  
AZ358CMTR  
AZ358P  
AZ358MTR-E1  
AZ358CM-E1  
Maximum  
Value  
AZ358CMTR-E1 358CM  
358CM-E1  
Tape & Reel  
Tube  
AZ358P-E1  
AZ358P  
AZ358P-E1  
AZ358CP-E1  
Maximum  
Value  
AZ358CP  
AZ358CP-E1  
AZ358CP  
Tube  
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.  
Aug. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
3
Data Sheet  
LOW POWER DUAL OPERATIONAL AMPLIFIERS  
AZ358/358C  
Absolute Maximum Ratings (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Power Supply Voltage  
V
20  
V
CC  
Differential Input Voltage  
Input Voltage  
V
V
20  
-0.3 to 20  
50  
V
V
ID  
IC  
Input Current (V <-0.3V) (Note 2)  
I
mA  
IN  
IN  
Output Short Circuit to Ground  
(One Amplifier) (Note 3)  
Continuous  
o
V
≤ 12V and T = 25 C  
CC  
A
DIP-8  
830  
550  
Power Dissipation (TA=25oC)  
P
mW  
D
SOIC-8  
oC  
oC  
oC  
TJ  
Operating Junction Temperature  
Storage Temperature Range  
150  
-65 to 150  
260  
TSTG  
TLEAD  
Lead Temperature (Soldering, 10 Seconds)  
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to  
the device. These are stress ratings only, and functional operation of the device under these conditions is not  
implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.  
Note 2: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to  
the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode  
clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This  
transistor action can cause the output voltages of the op amps to go to the V voltage level (or to ground for a  
CC  
large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output  
states will re-establish when the input voltage, which was negative, again returns to a value greater than -0.3V (at  
o
25 C)  
Note 3: Short circuits from the output to V can cause excessive heating and eventual destruction. When consi-  
CC  
dering short circuits to ground, the maximum output current is approximately 40mA independent of the magni-  
tude of V . At values of supply voltage in excess of +12V, continuous short circuits can exceed the power dissi-  
CC  
pation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all  
amplifiers.  
Recommended Operating Conditions  
Parameter  
Symbol  
VCC  
Min  
3
Max  
18  
Unit  
V
Supply Voltage  
oC  
Ambient Operating Temperature Range  
TA  
-40  
85  
Aug. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
4
Data Sheet  
LOW POWER DUAL OPERATIONAL AMPLIFIERS  
AZ358/358C  
Electrical Characteristics  
o
V
=5V, GND=0, T =25 C unless otherwise specified.  
CC  
A
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
2
Max  
5
Unit  
mV  
nA  
VO=1.4V, RS=0Ω,  
VCC=5V to 15V  
AZ358  
VIO  
Input Offset Voltage  
AZ358C  
2
3
Input Bias Current  
(Note 4)  
IBIAS  
IIN+ or IIN-, VCM=0V  
20  
200  
Input Offset Current  
IIO  
IIN+-IIN-, VCM=0V  
VCC=15V  
5
50  
nA  
V
Input Common Mode  
Voltage Range (Note 5)  
VIR  
0
V -1.5  
CC  
ICC  
RL=∞, Over full temperature VCC=15V  
0.7  
0.5  
1.5  
1.2  
Supply Current  
mA  
dB  
range on all OP Amps  
VCC=5V  
Large Signal Voltage Gain  
GV  
VCC=15V, RL≥2ΚΩ,  
85  
100  
VO=1V to 11V  
Common Mode Rejection  
Ratio  
CMRR  
PSRR  
CS  
V
CM=0V to (VCC-1.5)V  
70  
70  
90  
90  
dB  
dB  
dB  
Power Supply Rejection  
Ration  
VCC=5V to 15V  
Channel Separation  
(Note 6)  
f=1KHz to 20KHz  
-120  
Source  
ISOURCE VIN+=1V, VIN-=0V, VCC=15V, VO=2V  
20  
10  
12  
40  
18  
50  
40  
mA  
mA  
µA  
ISINK  
VIN+=0V, VIN-=1V, VCC=15V, VO=2V  
IN+=0V, VIN-=1V, VCC=15V, VO=0.2V  
Output Current  
Sink  
V
Output Short Circuit to  
Ground  
ISC  
VCC=15V  
60  
20  
mA  
VOH  
VCC=15V, RL=2KΩ  
12  
V
Output Voltage Swing  
VCC=15V, RL=10KΩ  
12.5  
13.5  
5
VOL  
VCC=5V, RL=10KΩ  
mV  
Note 4: The direction of the input current is out of the IC due to the PNP input stage. This current is essentially  
constant, independent of the state of the output so no loading change exists on the input lines.  
Note 5: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by  
o
o
more than 0.3V (at 25 C). The upper end of the common-mode voltage range is V -1.5V (at 25 C), but either or  
CC  
both inputs can go to +18V without damages, independent of the magnitude of the V  
.
CC  
Note 6: Due to proximity of external components, insure that coupling is not originating via stray capacitors  
between these external parts. This typically can be detected as this type of capacitance increases at higher frequen-  
cies.  
Aug. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
5
Data Sheet  
LOW POWER DUAL OPERATIONAL AMPLIFIERS  
AZ358/358C  
Typical Performance Characteristics  
8
7
6
5
4
3
2
1
0
30  
25  
20  
15  
10  
5
NEGATIVE  
VCC=15V  
POSITIVE  
0
-40  
0
2
4
6
8
-20  
0
20  
40  
60  
80  
100  
120  
Power Supply Voltage (±V  
)
o
DC  
Temperature ( C)  
Figure 4. Input Voltage Range  
Figure 5. Input Current  
4.0  
120  
110  
100  
90  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VCC  
ID  
A
mA  
RL=2KΩ  
RL=20KΩ  
80  
TA:0oC TO 85oC  
70  
60  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
Power Supply Voltage (V)  
Power Supply Voltage (V)  
Figure 6. Supply Current  
Figure 7. Voltage Gain  
Aug. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
6
Data Sheet  
LOW POWER DUAL OPERATIONAL AMPLIFIERS  
AZ358/358C  
Typical Performance Characteristics (Continued)  
110  
V
=15V  
CC  
VCC: 10V TO 15VDC TA: -40oC TO 85oC  
100  
R
= 2KΩ  
L
90  
80  
70  
60  
R
10M  
50  
40  
30  
20  
10  
0
0.1uF  
VCC  
VO  
VCC/2  
VIN  
1HZ  
10HZ  
100HZ  
1kHZ  
10kHZ  
100kHZ  
1MHZ  
Time (µS)  
Frequency (Hz)  
Figure 8. Open Loop Frequency Response  
Figure 9. Voltage Follower Pulse Response  
20  
VOUT  
R
100K  
o
VIN  
T
= 25 C  
+15  
VDC  
A
R
1K  
50pF  
VO  
15  
10  
5
V
= 15V  
CC  
+7VDC  
VIN  
R
2K  
Input  
Output  
0
1K  
10K  
100K  
1000K  
Time (µS)  
Frequency (Hz)  
Figure 10. Voltage Follower Pulse Response  
(Small Signal)  
Figure 11. Large Signal Frequency Response  
Aug. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
7
Data Sheet  
LOW POWER DUAL OPERATIONAL AMPLIFIERS  
AZ358/358C  
Typical Performance Characteristics (Continued)  
10  
8
TA = 25oC  
7
6
5
4
3
2
VCC  
1
VCC/2  
VO  
VCC=5V  
IO  
VCC  
0.1  
VCC=15V  
IO  
Independent of VCC  
TA = 25oC  
VCC/2  
Vo  
0.01  
1E-3  
1
1E-3  
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
Output Sink Current (mA)  
Output Source Current (mA)  
Figure 12. Output Characteristics Current Sourcing  
Figure 13. Output Characteristics Current Sinking  
100  
90  
80  
IO  
70  
60  
50  
40  
30  
20  
10  
0
-40  
-20  
0
20  
40  
60  
80  
o
Temperature ( C)  
Figure 14. Current Limiting  
Aug. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
8
Data Sheet  
LOW POWER DUAL OPERATIONAL AMPLIFIERS  
AZ358/358C  
Typical Application  
R1  
Opto  
Isolator  
R6  
-
1/2 AZ358/C  
GND  
Battery  
Pack  
AC  
Line  
SMPS  
+
R7  
R4  
R5  
R3  
VCC  
Current  
Sense  
-
R2  
1/2 AZ358/C  
+
GND  
AZ431  
R8  
Figure 15. Battery Charger  
R1 910K  
R1 100K  
+V1  
+V2  
+
R2 100K  
VO  
-
VCC  
R5  
100K  
R2 100K  
1/2 AZ358/C  
1/2 AZ358/C  
+
-
R3 91K  
R3 100K  
R6 100K  
+V3  
VIN(+)  
RL  
+V4  
R4 100K  
Figure 17. DC Summing Amplifier  
Figure 16. Power Amplifier  
Aug. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
9
Data Sheet  
LOW POWER DUAL OPERATIONAL AMPLIFIERS  
AZ358/358C  
Typical Application (Continued)  
VCC  
R2 1M  
R1 100k  
+
+
2V  
-
C1  
0.1µF  
R3  
2K  
R1  
R2  
2V  
-
2K  
-
CO  
VO  
1/2 AZ358/C  
+
RB  
6.2k  
RL  
10k  
-
CIN  
AC  
R3  
1M  
1/2 AZ358/C  
R4 100k  
+
I1  
1mA  
I2  
VCC  
AV=1+R2/R1  
AV=11 (As shown)  
R5  
100k  
R4  
3K  
C2  
10µF  
Figure 19. Fixed Current Sources  
Figure 18. AC Coupled Non-Inverting Amplifier  
R1 1M  
C1 0.01µF  
R2 100K  
0.001µF  
R1 16K R2 16K  
+
VIN  
-
VO  
VO  
C2  
0.01µF  
1/2 AZ358/C  
1/2 AZ358/C  
R3  
100k  
-
+
V0  
R3 100K  
R5 100K  
R4  
100k  
VCC  
f0  
0
fo=1KHz  
Q=1  
AV=2  
R4  
100  
K
Figure 20. Pulse Generator  
Figure 21. DC Coupled Low-Pass Active Filter  
Aug. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
10  
Data Sheet  
LOW POWER DUAL OPERATIONAL AMPLIFIERS  
AZ358/358C  
Mechanical Dimensions  
DIP-8  
Unit: mm(inch)  
0.700(0.028)  
7.620(0.300)TYP  
5°  
1.524(0.060) TYP  
6°  
3.200(0.126)  
3.600(0.142)  
3.710(0.146)  
4.310(0.170)  
0.510(0.020)MIN  
3.000(0.118)  
3.600(0.142)  
0.204(0.008)  
0.360(0.014)  
0.254(0.010)TYP  
8.200(0.323)  
9.400(0.370)  
2.540(0.100)TYP  
0.130(0.005)MIN  
0.360(0.014)  
0.560(0.022)  
6.200(0.244)  
6.600(0.260)  
R0.750(0.030)  
Φ3.000(0.118)  
Depth  
0.100(0.004)  
0.200(0.008)  
9.000(0.354)  
9.400(0.370)  
Aug. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
11  
Data Sheet  
LOW POWER DUAL OPERATIONAL AMPLIFIERS  
AZ358/358C  
Mechanical Dimensions (Continued)  
SOIC-8  
Unit: mm(inch)  
4.800(0.189)  
0.320(0.013)  
1.350(0.053)  
1.750(0.069)  
5.000(0.197)  
0.675(0.027)  
0.725(0.029)  
D
5.800(0.228)  
6.200(0.244)  
1.270(0.050)  
TYP  
D
20:1  
φ
0.800(0.031)  
0.200(0.008)  
0.100(0.004)  
0.300(0.012)  
0°  
8°  
1.000(0.039)  
3.800(0.150)  
4.000(0.157)  
1°  
5°  
0.330(0.013)  
0.510(0.020)  
0.900(0.035)  
6)  
00  
(0.  
50  
.1  
R0  
0.190(0.007)  
0.250(0.010)  
Aug. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
12  
http://www.bcdsemi.com  
IMPORTANT NOTICE  
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-  
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any  
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use  
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or  
other rights nor the rights of others.  
MAIN SITE  
BCD Semiconductor Manufacturing Limited  
BCD Semiconductor Manufacturing Limited  
- Wafer Fab  
- IC Design Group  
Shanghai SIM-BCD Semiconductor Manufacturing Limited  
800, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
Advanced Analog Circuits (Shanghai) Corporation  
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
USA Office  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office  
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office  
27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China  
Tel: +86-755-8368 3987, Fax: +86-755-8368 3166  
BCD Semiconductor (Taiwan) Company Limited  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,  
Taiwan  
BCD Semiconductor Corporation  
3170 De La Cruz Blvd., Suite 105, Santa Clara,  
CA 95054-2411, U.S.A  
Tel: +886-2-2656 2808, Fax: +886-2-2656 2806  
Tel: +1-408-988 6388, Fax: +1-408-988 6386  

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