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AZ386MTR-E1

更新时间：2024-09-18 05:45:02
品牌：BCDSEMI
描述：LOW VOLTAGE AUDIO POWER AMPLIFIER

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AZ386MTR-E1 概述

LOW VOLTAGE AUDIO POWER AMPLIFIER 低电压音频功率放大器 音频/视频放大器

AZ386MTR-E1 规格参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：SOIC包装说明：SOP, SOP8,.25
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.19Is Samacsys：N
商用集成电路类型：AUDIO AMPLIFIER谐波失真：10%
JESD-30 代码：R-PDSO-G8长度：4.9 mm
信道数量：1功能数量：1
端子数量：8最高工作温度：70 °C
最低工作温度：标称输出功率：1 W
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
电源：4/15 V认证状态：Not Qualified
座面最大高度：1.75 mm子类别：Audio/Video Amplifiers
最大压摆率：8 mA最大供电电压 (Vsup)：16 V
最小供电电压 (Vsup)：4 V表面贴装：YES
技术：BIPOLAR温度等级：COMMERCIAL
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：3.9 mmBase Number Matches：1

AZ386MTR-E1 数据手册

通过下载AZ386MTR-E1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Data Sheet  
AZ386  
LOW VOLTAGE AUDIO POWER AMPLIFIER  
General Description  
Features  
The AZ386 is a power amplifier designed for use in  
low voltage consumer applications. The gain is inter-  
nally set to 20 to keep external part count low, but the  
addition of an external resistor and capacitor between  
pin 1 and pin 8 will increase the gain to any value from  
20 to 200.  
·
·
·
·
·
·
·
Wide Supply Voltage Range: 4V to 16V  
Low Quiescent Current Drain: 6mA  
Voltage Gains from 20 to 200  
Battery Operation  
Minimum External Parts  
Low Power Dissipation  
Low Distortion  
The inputs are ground referenced while the output  
automatically biases to one-half the supply voltage.  
The quiescent power drain is only 24mW when opera-  
ting from a 5V supply, making the AZ386 ideal for  
battery operation.  
Applications  
·
·
·
·
·
·
·
·
·
AM-FM Radio Amplifier  
Cordless Phone  
TV Sound Systems  
Portable Tape Player Amplifier  
Intercoms  
This IC is available in SOIC-8 and DIP-8 packages.  
Line Drivers  
Ultrasonic Drivers  
Small Servo Drivers  
Power Converters  
SOIC-8  
DIP-8  
Figure 1. Package Types of AZ386  
BCD Semiconductor Manufacturing Limited  
Oct. 2006 Rev. 1. 3  
1
Data Sheet  
AZ386  
LOW VOLTAGE AUDIO POWER AMPLIFIER  
Pin Configuration  
M Package/P Package  
(SOIC-8/DIP-8)  
GAIN  
1
8
GAIN  
INPUT -  
INPUT +  
GND  
2
3
4
7
6
5
BYPASS  
VCC  
VOUT  
Top View  
Figure 2. Pin Configuration of AZ386  
Functional Block Diagram  
GAIN  
1
GAIN  
8
VCC  
6
15KΩ  
7
BYPASS  
15KΩ  
5
VOUT  
15KΩ  
150Ω  
1.35KΩ  
2
INPUT -  
50KΩ  
50KΩ  
4
GND  
3
INPUT +  
Figure 3. Functional Block Diagram of AZ386  
BCD Semiconductor Manufacturing Limited  
Oct. 2006 Rev. 1. 3  
2
Data Sheet  
AZ386  
LOW VOLTAGE AUDIO POWER AMPLIFIER  
Ordering Information  
AZ386  
-
E1: Lead Free  
Blank: Tin Lead  
Circuit Type  
Package  
TR: Tape and Reel  
Blank: Tube  
M: SOIC-8  
P: DIP-8  
Part Number  
Marking ID  
Temperature  
Package  
Packing Type  
Range  
Tin Lead  
AZ386M  
Lead Free  
Tin Lead  
Lead Free  
386M-E1  
AZ386M-E1  
AZ386MTR-E1  
AZ386P-E1  
386M  
Tube  
Tape & Reel  
Tube  
0 to 70oC  
0 to 70oC  
SOIC-8  
DIP-8  
AZ386MTR  
AZ386P  
386M  
386M-E1  
AZ386P  
AZ386P-E1  
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.  
BCD Semiconductor Manufacturing Limited  
Oct. 2006 Rev. 1. 3  
3
Data Sheet  
AZ386  
LOW VOLTAGE AUDIO POWER AMPLIFIER  
Absolute Maximum Ratings (Note 1)  
Parameter  
Symbol  
Value  
Unit  
V
V
18  
Power Supply Voltage  
CC  
AZ386P  
AZ386M  
1.25  
0.73  
W
P
Package Dissipation (Note 2)  
D
W
V
-0.4 to 0.4  
150  
Input Voltage  
V
IN  
o
T
Junction Temperature  
Storage Temperature Range  
C
J
o
-55 to 150  
T
C
STG  
DIP-8 Soldering  
(10 sec.)  
260  
o
C
Soldering Information  
Thermal Resistance  
SOIC-8 (15 sec.)  
DIP-8  
215  
107  
172  
o
θ
C/W  
JA  
SOIC-8  
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the  
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond  
those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum  
Ratings" for extended periods may affect device reliability.  
o
o
Note 2: For operation in ambient temperatures (T ) above 25 C, the device must be derated based on a 150 C  
A
o
maximum junction temperature and 1) a thermal resistance of 107 C/W junction to ambient for the Dual-in-Line  
o
package and 2) a thermal resistance of 172 C/W for the small outline package.  
Recommended Operating Conditions  
Parameter  
Min  
Max  
Unit  
o
Operating Temperature Range  
0
70  
C
BCD Semiconductor Manufacturing Limited  
Oct. 2006 Rev. 1. 3  
4
Data Sheet  
AZ386  
LOW VOLTAGE AUDIO POWER AMPLIFIER  
Electrical Characteristics (Note 3)  
o
Operating Conditions: T =25 C unless otherwise specified.  
A
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
Supply Voltage  
VCC  
4
16  
8
Quiescent Current  
Output Power  
IQ  
VCC=6V, VIN=0  
6
mA  
mW  
mW  
mW  
dB  
VCC=6V, RL=8Ω, THD=10%  
VCC=9V, RL=8Ω, THD=10%  
VCC=16V, RL=32Ω, THD=10%  
250  
500  
700  
300  
800  
1000  
26  
POUT  
VCC=6V, f=1KHz  
GV  
Voltage Gain  
10µF from Pin 1 to 8  
45  
dB  
V
CC=6V, Pins 1 and 8 open  
BW  
500  
KHz  
%
Bandwidth  
VCC=6V, RL=8Ω, POUT=125mW  
THD  
0.27  
45  
Total Harmonic Distortion  
f=1KHz, Pins 1 and 8 open  
VCC=6V, f=1KHz, CBYPASS=10µF,  
Pins 1 and 8 open, Referred to Output  
dB  
Power Supply Rejection Ratio  
PSRR  
Input Resistance  
RIN  
70  
10  
KΩ  
Input Bias Current  
IBIAS  
VCC=6V, Pins 2 and 3 open  
nA  
Note 3: All voltages are measured with respect to the ground pin, unless otherwise specified.  
BCD Semiconductor Manufacturing Limited  
Oct. 2006 Rev. 1. 3  
5
Data Sheet  
AZ386  
LOW VOLTAGE AUDIO POWER AMPLIFIER  
Typical Performance Characteristics  
16  
8
7
6
5
4
3
2
1
14  
12  
10  
8
AZ386  
6
AZ386 RL=4Ω  
4
AZ386 RL=8Ω  
AZ386 RL=16Ω  
AZ386 RL=32Ω  
2
0
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
4
6
8
10  
12  
14  
16  
18  
Supply Voltage (V)  
Supply Voltage (V)  
Figure 4. Quiescent Supply Current vs.  
Supply Voltage  
Figure 5. Peak-to-Peak Output Voltage  
Swing vs. Supply Voltage  
1.2  
60  
50  
40  
30  
20  
10  
0
AZ386  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VCC=6V RL=8Ω POUT=125mW C1,8=0  
AZ386 C1,8=0  
AZ386 C1,8=10u  
10  
100  
1k  
10k  
100  
1k  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
Figure 6. Voltage Gain vs. Frequency  
Figure 7. Distortion vs. Frequency  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
10  
9
8
7
6
5
4
3
2
1
0
AZ386 VCC=12V  
AZ386 VCC=9V  
AZ386 VCC=6V  
RL=4Ω  
AZ386  
CC=6V RL=8Ω f=1KHz  
V
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
1
10  
100  
1,000  
Output Power (W)  
Power Out (mW)  
Figure 9. Device Dissipation vs. Output Power  
Figure 8. Distortion vs. Output Power  
Oct. 2006 Rev. 1. 3  
(4Ω Load)  
BCD Semiconductor Manufacturing Limited  
6
Data Sheet  
AZ386  
LOW VOLTAGE AUDIO POWER AMPLIFIER  
Typical Performance Characteristics (Continued)  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
AZ386 VCC=16V  
AZ386 VCC=12V  
AZ386 VCC=9V  
AZ386 VCC=6V  
RL=8Ω  
AZ386 VCC=16V  
AZ386 VCC=12V  
AZ386 VCC=9V  
AZ386 VCC=6V  
RL=16Ω  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
Output Power (W)  
Output Power (W)  
Figure 10. Device Dissipation vs. Output Power  
Figure 11. Device Dissipation vs. Output Power  
(8Ω Load)  
(16Ω Load)  
Typical Applications  
VCC  
10µF  
VCC  
+
6
6
2
1
-
2
3
1
-
8
250µF  
+
250µF  
+
8
AZ386  
VIN  
5
V
AZ386  
IN  
5
0.05µF  
3
7
10KΩ  
+
4
0.05µF  
10Ω  
10KΩ  
+
7
10Ω  
BYPASS  
4
Figure 12. Amplifier With Gain=20  
Figure 13. Amplifier With Gain=200  
BCD Semiconductor Manufacturing Limited  
Oct. 2006 Rev. 1. 3  
7
Data Sheet  
AZ386  
LOW VOLTAGE AUDIO POWER AMPLIFIER  
Typical Applications (Continued)  
VCC  
VCC  
390Ω  
+
+
1.2KΩ  
10µF  
6
10µF  
ELDEMA  
6
2
3
CF-S-2158  
1
-
2
3
1
-
50µF  
+
8
VO  
250µF  
+
AZ386  
3V - 15mA  
8
5
VIN  
AZ386  
0.01µF  
47KΩ  
0.05µF  
5
RL  
+
7
0.05µF  
10Ω  
10KΩ  
+
4
7
BYPASS  
10Ω  
BYPASS  
0.01µF  
4.7KΩ  
Figure 14. Amplifier With Gain=50  
Figure 15. Low Distortion Power Wienbridge Oscillator  
VCC  
VCC  
6
30KΩ  
2
-
1
6
0.033µF  
10KΩ  
8
50µF  
+
VO  
0.1µF  
2
3
8
-
AZ386  
250µF  
+
5
VO  
1
VIN  
AZ386  
3
+
7
RL  
5
0.05µF  
4
10KΩ  
+
7
10Ω RL  
4
10KΩ  
1KΩ  
f = 1KHz  
Figure 16. Amplifier With Bass Boost  
Figure 17. Square Wave Oscillator  
BCD Semiconductor Manufacturing Limited  
Oct. 2006 Rev. 1. 3  
8
Data Sheet  
AZ386  
LOW VOLTAGE AUDIO POWER AMPLIFIER  
Mechanical Dimensions  
SOIC-8  
Unit: mm(inch)  
4.700(0.185)  
0.320(0.013)  
1.350(0.053)  
1.750(0.069)  
5.100(0.201)  
0.675(0.027)  
0.725(0.029)  
D
5.800(0.228)  
6.200(0.244)  
1.270(0.050)  
TYP  
D
20:1  
φ
0.800(0.031)  
0.200(0.008)  
0.100(0.004)  
0.300(0.012)  
0°  
8°  
1.000(0.039)  
3.800(0.150)  
4.000(0.157)  
0.190(0.007)  
0.250(0.010)  
1°  
5°  
0.330(0.013)  
0.510(0.020)  
0.900(0.035)  
)
006  
(0.  
50  
.1  
R0  
0.450(0.017)  
0.800(0.031)  
BCD Semiconductor Manufacturing Limited  
Oct. 2006 Rev. 1. 3  
9
Data Sheet  
AZ386  
LOW VOLTAGE AUDIO POWER AMPLIFIER  
Mechanical Dimensions (Continued)  
DIP-8  
Unit: mm(inch)  
0.700(0.028)  
7.620(0.300)TYP  
5°  
1.524(0.060) TYP  
6°  
3.200(0.126)  
3.600(0.142)  
3.710(0.146)  
4.310(0.170)  
0.510(0.020)MIN  
3.000(0.118)  
3.600(0.142)  
0.204(0.008)  
0.360(0.014)  
0.254(0.010)TYP  
8.200(0.323)  
9.400(0.370)  
2.540(0.100)TYP  
0.130(0.005)MIN  
0.360(0.014)  
0.560(0.022)  
6.200(0.244)  
6.600(0.260)  
R0.750(0.030)  
Φ3.000(0.118)  
Depth  
0.100(0.004)  
0.200(0.008)  
9.000(0.354)  
9.400(0.370)  
BCD Semiconductor Manufacturing Limited  
Oct. 2006 Rev. 1. 3  
10  
http://www.bcdsemi.com  
IMPORTANT NOTICE  
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-  
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any  
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use  
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or  
other rights nor the rights of others.  
MAIN SITE  
BCD Semiconductor Manufacturing Limited  
BCD Semiconductor Manufacturing Limited  
- Wafer Fab  
- IC Design Group  
Shanghai SIM-BCD Semiconductor Manufacturing Limited  
800, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
Advanced Analog Circuits (Shanghai) Corporation  
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
BCD Semiconductor (Taiwan) Company Limited  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, 3170 De La Cruz Blvd., Suite 105,  
USA Office  
BCD Semiconductor Corporation  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office  
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office  
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan  
Tel: +86-755-8826 7951, Fax: +86-755-8826 7865 Tel: +886-2-2656 2808, Fax: +886-2-2656 2806  
Santa Clara,  
CA 95054-2411, U.S.A  

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