AZ7500BM-E1 [BCDSEMI]
PULSE-WIDTH-MODULATION CONTROL CIRCUITS; 脉宽调制控制电路
| 型号： | AZ7500BM-E1 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
| 文件： | 总13页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ7500B/C
General Description
Features
The AZ7500B/C is a voltage mode pulse width modu-
lation switching regulator control circuit designed pri-
marily for power supply control.
·
·
·
·
·
·
Stable 4.95V/5V Reference Voltage Trimmed to
±1.0% Accuracy
Uncommitted Output TR for 200mA Sink or
Source Current
Single-End or Push-Pull Operation Selected by
Output Control
Internal Circuitry Prohibits Double Pulse at Either
Output
Complete PWM Control Circuit with Variable
Duty Cycle
On-Chip Oscillator With Master or Slave Opera-
tion
The AZ7500B/C consists of a reference voltage circuit,
two error amplifiers, an on-chip adjustable oscillator, a
dead-time control (DTC) comparator, a pulse-steering
control flip-flop, and an output control circuit. The pre-
cision of voltage reference (V ) is improved up to ±
REF
1% through trimming and this provides a better output
voltage regulation. The AZ7500B/C provides for push-
pull or single-ended output operation, which can be
selected through the output control.
Applications
The difference between AZ7500B and AZ7500C is that
they have 4.95V and 5V reference voltage respectively.
·
·
·
SMPS
Back Light Inverter
Charger
The AZ7500B/C is available in standard packages of
DIP-16 and SOIC-16.
DIP-16
SOIC-16
Figure 1. Package Types of AZ7500B/C
BCD Semiconductor Manufacturing Limited
Apr. 2006 Rev. 1. 2
1
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ7500B/C
Pin Configuration
M/P Package
(SOIC-16/DIP-16)
1IN +
1IN -
1
2
16
15
2IN +
2IN -
3
4
5
6
7
8
14
13
12
11
10
9
FEEDBACK
REF
OUTPUT CTRL
DTC
CT
V
CC
RT
C2
E2
E1
GND
C1
Figure 2. Pin Configuration of AZ7500B/C (Top View)
Output Function Control Table
Signal for Output Control
Output Function
VI = GND
Single-ended or parallel output
VI = VREF
Normal push-pull operation
Functional Block Diagram
OUTPUT CTRL
13
6
8
RT
C1
5
Oscillator
Pulse-Steering
CT
Flip-Flop
Q1
Dead-Time Control
Comparator
9
E1
D
4
C2
11
DTC
+
CK
0.12V
Q2
Error Amplifier 1
+
+
10
E2
PWM
Comparator
1
2
1IN +
1IN -
12
VCC
Error Amplifier 2
+
16
15
Reference
Regulator
14
2IN +
2IN -
REF
0.7mA
7
GND
3
FEEDBACK
Figure 3. Functional Block Diagram of AZ7500B/C
BCD Semiconductor Manufacturing Limited
Apr. 2006 Rev. 1. 2
2
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ7500B/C
Ordering Information
AZ7500
-
E1: Lead Free
Blank: Tin Lead
Circuit Type
TR: Tape and Reel
Blank: Tube
Package
M: SOIC-16
P: DIP-16
Reference Voltage
B: 4.95V
C: 5.0V
Part Number
Marking ID
Lead Free
Temperature
Package
Packing Type
Range
Tin Lead
AZ7500BM
Lead Free
AZ7500BM-E1
AZ7500BMTR-E1 AZ7500BM
AZ7500CM-E1 AZ7500CM
AZ7500CMTR-E1 AZ7500CM
Tin Lead
Tube
AZ7500BM
AZ7500BM-E1
Tape & Reel
Tube
AZ7500BMTR
AZ7500CM
AZ7500BM-E1
AZ7500CM-E1
AZ7500CM-E1
SOIC-16
-40 to 85oC
AZ7500CMTR
Tape & Reel
Tube
AZ7500BP
AZ7500CP
AZ7500BP-E1
AZ7500CP-E1
AZ7500BP
AZ7500CP
AZ7500BP-E1
AZ7500CP-E1
DIP-16
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
BCD Semiconductor Manufacturing Limited
Apr. 2006 Rev. 1. 2
3
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ7500B/C
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
VCC
VI
Value
Unit
V
Supply Voltage (Note 2)
Amplifier Input Voltage
Collector Output Voltage
Collector Output Current
40
-0.3 to VCC + 0.3
V
VO
40
V
IO
250
mA
oC/W
Package Thermal Impedance
(Note 3)
RθJA
M Package
P Package
73
67
oC
Lead Temperature 1.6mm from case for 10 seconds
Storage Temperature Range
260
-65 to 150
200
oC
V
TSTG
ESD rating (Machine Model)
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum
Ratings"for extended periods may affect device reliability.
Note 2: All voltage values are with respect to the network ground terminal.
Note 3: Maximum power dissipation is a function of T (max), Rθ and T . The maximum allowable power dissi-
J
JA
A
pation at any allowable ambient temperature is P = ( T (max) - T )/Rθ . Operating at the absolute maximum T
D
J
A
JA
J
o
of 150 C can affect reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
7
15
36
V
Collector Output Voltage
VC1, VC2
30
36
V
Collector Output Current
(Each Transistor)
IC1, IC2
200
mA
Amplifier Input Voltage
Current Into Feedback Terminal
Reference Output Current
Timing Capacitor
VI
IFB
IREF
CT
0.3
VCC - 2
0.3
V
mA
mA
µF
10
0.00047
1.8
0.001
30
10
Timing Resistor
RT
500
200
KΩ
KHz
V
Oscillator Frequency
fosc
1.0
40
PWM Input Voltage (Pin 3, 4, 14)
Operating Free-Air Temperature
0.3
-40
5.3
85
oC
TA
BCD Semiconductor Manufacturing Limited
Apr. 2006 Rev. 1. 2
4
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ7500B/C
Electrical Characteristics
o
T = 25 C, V =20V, f=10KHz unless otherwise noted.
A
CC
Parameter
Symbol Conditions
Min Typ
Max
Unit
Reference Section
Output Reference Voltage
for AZ7500B
VREF
IREF=1mA
4.90
4.85
4.95
4.95
5.0
V
V
o
o
5.05
I
REF=1mA, TA= -40 to 85 C
Output Reference Voltage
for AZ7500C
VREF
IREF=1mA
4.95
4.9
5.0
5.0
5.05
5.1
V
V
IREF=1mA, TA= -40 to 85 C
Line Regulation
RLINE VCC = 7V to 36V
2
1
25
15
50
mV
mV
mA
Load Regulation
RLOAD IREF=1mA to 10mA
Short-Circuit Output Current
Oscillator Section
ISC
VREF = 0V
10
35
CT=0.001µF, RT=30KΩ,
40
10
CT=0.01µF, RT=12KΩ
9.2
9.0
10.8
12
Oscillator Frequency
fOSC
KHz
%
CT=0.01µF, RT=12KΩ, TA= -40
o
to 85 C
Frequency Change with Temperature
∆f /∆T CT=0.01µF, RT=12KΩ, TA= -40
1
o
to 85 C
Dead-Time Control Section
Input Bias Current
IBIAS
VCC=15V, V4= 0 to 5.25V
-2
3
-10
3.3
µA
Maximum Duty Cycle,
D(MAX) VCC=15V, V4= 0V,
Pin 13= VREF
45
0
%
Input Threshold Voltage
VITH
Zero Duty Cycle
V
Maximum Duty Cycle
Error-Amplifier Section
Input Offset Voltage
VIO
IIO
V3 = 2.5V
2
10
250
1
mV
nA
µA
V
Input Offset Current
V3 = 2.5V
25
0.2
Input Bias Current
IBIAS
VCM
GVO
V3 = 2.5V
Common-Mode Input Voltage Range
Open-Loop Voltage Gain
VCC=7V to 36V
VO =0.5V to 3.5V
-0.3
70
VCC-2
95
dB
Unity-Gain Bandwidth
BW
CMRR
ISINK
650
80
KHz
dB
Common-Mode Rejection Ratio
Output Sink Current (Feedback)
65
VID = -15mV to -5V,
V3 = 0.7V
-0.3
-0.7
mA
Output Source Current (Feedback)
Apr. 2006 Rev. 1. 2
ISOURCE VID=15mV to 5V
V3 = 3.5V
2
mA
BCD Semiconductor Manufacturing Limited
5
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ7500B/C
Electrical Characteristics (Continued)
Parameter
Symbol
Conditions
Min
Typ Max
Unit
PWM Comparator Section
Input Threshold Voltage
VITH
ISINK
Zero duty cycle
V3 = 0.7V
4
4.5
V
Input Sink Current
-0.3
-0.7
mA
Output Section
Common
Emitter
VCE
VE = 0V, IC =200mA
1.1
1.5
1.3
2.5
(SAT)
Output Saturation Voltage
V
Emitter
VCC
VCC = 15V,
Follower
(SAT)
IE = -200mA
Collector Off-State Current
Emitter Off-State Current
IC (OFF) VCE = 36V, VCC=36V
IE(OFF) VCC = VC = 36V, VE = 0
2
6
100
µA
µA
-100
Total Device
Supply Current
ICC
Pin 6 = VREF, VCC=15V
10
mA
Output Switching Characteristics
Rise Time
tR
tF
Common Emitter
Common Collector
100
25
200
100
ns
ns
Fall Time
Common Emitter
Common Collector
BCD Semiconductor Manufacturing Limited
Apr. 2006 Rev. 1. 2
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Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ7500B/C
Parametr Measurement information
VCC = 20V
12
150Ω
4W
150Ω
4W
VCC
8
9
4
3
C1
E1
DTC
Output 1
Test
Inputs
FEEDBACK
12KΩ
6
11
10
RT
CT
C2
E2
Output 2
5
1
0.01uF
1IN+
1IN-
2
16
15
13
2IN+
2IN-
14
OUTPUT
CTRL
REF
GND
50KΩ
7
Test Circuit
VCC
0V
Voltage
at C1
VCC
0V
Voltage
at C2
Voltage
at CT
Threshold Voltage
DTC
0V
Threshold Voltage
FEEDBACK
0.7V
0%
0%
MAX
Duty Cycle
Voltage Waveforms
Figure 4. Operational Test Circuit and Waveforms
BCD Semiconductor Manufacturing Limited
Apr. 2006 Rev. 1. 2
7
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ7500B/C
Parametr Measurement information (Continued)
Amplifier Under Test
FEEDBACK
+
+
VI
Vref
Other Amplifier
Figure 5. Error Amplifier Characteristics
20V
68Ω
4W
tf
tr
Each Output
Circuit
Output
90%
90%
CL = 15pF
(See Note A)
10%
10%
Note A: CL includes probe and jig capacitance.
Figure 6. Common-Emitter Configuration
20V
Each Output
Circuit
90%
90%
Output
10%
10%
tf
68Ω
4W
CL = 15pF
(See Note A)
tr
Note A: CL includes probe and jig capacitance.
Figure 7. Emitter-Follower Configuration
BCD Semiconductor Manufacturing Limited
Apr. 2006 Rev. 1. 2
8
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ7500B/C
Typical Performance Characteristics
VCC=20V
TA=25OC
100k
10k
1k
0.001µF
0.01µF
0.1µF
1k
10k
100k
1M
RT - Timing Resistance (Ω)
Figure 8. Oscillator Frequency vs. RT and CT
100
90
80
70
60
50
40
30
20
10
0
VCC=20V
∆VO=3V
TA=25oC
1
10
100
1k
10k
100k
1M
Frequency (Hz)
Figure 9. Error Amplifier Small-Signal Voltage Gain vs. Frequency
BCD Semiconductor Manufacturing Limited
Apr. 2006 Rev. 1. 2
9
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ7500B/C
Typical Applications
(VI=10V to 40V)
KSA1010
VI(+)
1mH
2A
(VO=5V, IO=1A)
VO
47
150
0.1µ
1M
5.1k
5.1k
12
VCC
11
C2
8
3
2
FEED
BACK
C1
1IN-
14
15
1
+
REF
2IN-
50µ
10V
+
50µ
AZ7500B
5.1k
50V
1IN+
2IN+
16
OUTPUT
CTRL
+
CT
DTC GND E1
E2
10
RT
50µ
10V
150
5
4
7
9
13
6
+
47k
0.001µ
GND
0.1
VI(-)
Figure 10. Pulse Width Modulated Step-Down Converter
BCD Semiconductor Manufacturing Limited
Apr. 2006 Rev. 1. 2
10
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ7500B/C
Mechanical Dimensions
SOIC-16
Unit: mm(inch)
1.650(0.065)
1.000(0.039)
0.700(0.028)
1.300(0.051)
0.406(0.016)
A
20:1
B
0.250(0.010)
0.500(0.020)
0.600(0.024)
1°
5°
R0.200(0.008)
R0.200(0.008)
0.250(0.010)
0.200(0.008)MIN
0.150(0.006)
0.250(0.010)
6.040(0.238)
3.940(0.155)
C-C
50:1
B
20:1
8°
C
C
0.200(0.008)
1.000(0.039)
Depth 0.200(0.008)
φ
S
3°
7°
A
0.400(0.016)×45°
BCD Semiconductor Manufacturing Limited
Apr. 2006 Rev. 1. 2
11
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ7500B/C
Mechanical Dimensions (Continued)
DIP-16
Unit: mm(inch)
0.700(0.028)
7.620(0.300)TYP
3.710(0.146)
4.310(0.170)
5°
6°
6°
1.524(0.060)TYP
3.200(0.126)
3.600(0.142)
4°
4°
Φ3.000(0.118)
Depth
0.050(0.002)
0.150(0.006)
0.204(0.008)
0.360(0.014)
0.254(0.010)
0.510(0.020)MIN
2.540(0.100)
TYP
0.360(0.014)
0.560(0.022)
8.200(0.323)
9.400(0.370)
3.000(0.118)
3.600(0.142)
6.200(0.244)
6.600(0.260)
18.800(0.740)
19.200(0.756)
R0.750(0.030)
BCD Semiconductor Manufacturing Limited
Apr. 2006 Rev. 1. 2
12
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IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
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相关型号：
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DIODES
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