AZV358MTR-G1 [BCDSEMI]
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS; 双路低电压轨到轨输出运算放大器
| 型号： | AZV358MTR-G1 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS |
| 文件： | 总15页 (文件大小：962K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
General Description
Features
The AZV358 is dual low voltage (2.7-5.5V)
operational amplifiers which have rail-to-rail output
swing capability. The input common-mode voltage
range includes ground. The chip exhibits excellent
speed-power ratio, achieving 1MHz of bandwidth and
1V/µs of slew rate with low supply current.
（For V =5V and V =0V, typical unless otherwise
CC
EE
noted）
·
·
·
·
·
·
Guaranteed 2.7V to 5.5V Performance
No Crossover Distortion
Gain-Bandwidth Product 1MHz
Industrial Temperature Range: -40oC to +85oC
Low Supply Current: 210µA
The AZV358 is built with BiCMOS process. It has
bipolar input and output stages for improved noise per-
formance, low input offset voltage and higher output
current drive.
Rail-to-Rail Output Swing under 10kΩ Load:
V
up to V -10mV
OH
OL
CC
V
near to V +65mV
EE
·
V
: -0.1V to V -0.8V
CM CC
AZV358 is available in the package of TSSOP-8 and
MSOP-8. The small packages save space on pc
boards, and enable the design of small portable elec-
tronic devices. It also allows the designer to place
the device closer to the signal source to reduce
noise pickup and increase signal integrity.
Applications
·
·
·
·
·
Active Filters
Low Power, Low Voltage Applications
General Purpose Portable Devices
Cellular Phone, Cordless Phone
Battery-Powered Systems
AZV358 is also available in standard SOIC-8 package.
MSOP-8
SOIC-8
TSSOP-8
Figure 1. Package Types of AZV358
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
1
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Pin Configuration
M/G/MM Package
(SOIC-8/TSSOP-8/MSOP-8)
1
2
3
4
8
7
6
5
VCC
OUTPUT 1
IN 1-
OUTPUT 2
IN 2-
IN 1+
VEE
IN 2+
Figure 2. Pin Configuration of AZV358 (Top View)
Functional Block Diagram
VCC
VBIAS1
VBIAS2
OUTPUT
IN-
IN+
VBIAS3
VEE
Figure 3. Functional Block Diagram of AZV358 (Each Block)
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
2
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Ordering Information
-
AZV358
E1: Lead Free
G1: Green
Circuit Type
Package
Blank: Tube
TR: Tape and Reel
M: SOIC-8
G: TSSOP-8
MM: MSOP-8
Part Number
Marking ID
Temperature
Package
SOIC-8
Packing Type
Range
Lead Free
AZV358M-E1
Green
Lead Free
Green
AZV358M-G1
AZV358M-G1
GG3E
AZV358M-G1
AZV358M-E1
AZV358M-E1
EG3E
Tube
Tape & Reel
Tube
-40 to 85oC
AZV358MTR-E1
AZV358G-E1
AZV358MTR-G1
AZV358G-G1
-40 to 85oC
-40 to 85oC
TSSOP-8
MSOP-8
AZV358GTR-E1
AZV358MM-E1
AZV358MMTR-E1
AZV358GTR-G1
AZV358MM-G1
EG3E
GG3E
Tape & Reel
Tube
AZV358MM-E1
AZV358MM-G1
AZV358MM-G1
AZV358MMTR-G1 AZV358MM-E1
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
6
Unit
VCC
Power Supply Voltage
Operation Junction Temperature
V
oC
oC
oC
V
TJ
150
TSTG
TLEAD
Storage Temperature Range
-65 to 150
Lead Temperature (Soldering, 10 Seconds)
ESD (Machine Model)
260
200
ESD (Human Body Model)
2000
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
VCC
Min
2.7
Max
5.5
Unit
V
Supply Voltage
oC
Ambient Operating Temperature Range
TA
-40
85
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
3
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
2.7V Electrical Characteristics
Limits in standard typeface are for TA=25oC, bold typeface applies over TA=-40oC to 85oC, VCC=2.7V, VEE=0V, VCM=1.0V,
VO=VCC/2 and RL>1MΩ, unless otherwise specified. (Note 2)
Parameter
Symbol
Conditions
Min
Typ
Max
7
Unit
1.7
VIO
Input Offset Voltage
mV
9
11
5
250
500
50
IB
Input Bias Current
Input Offset Current
nA
IIO
VCM
ICC
nA
V
150
Input Common Mode Voltage
Range
for CMRR≥50dB
-0.1
1.9
140
340
VO=VCC/2, AVCL=1, No load
Supply Current
µA
420
Common Mode Rejection
Ratio
0≤VCM≤1.7V
CMRR
PSRR
50
50
63
60
dB
dB
Power Supply Rejection
Ratio
2.7V≤VCC≤5V VO=1V,
VO=0V
5
20
30
2.69
60
1
mA
mA
V
ISOURCE
ISINK
Output Short Circuit Current
Output Voltage Swing
VO=2.7V
10
2.60
VOH
VOL
RL=10kΩ to 1.35V
180
mV
MHz
deg
dB
CL=200pF
Gain Bandwidth Product
Phase Margin
GBWP
60
10
φM
Gain Margin
GM
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
4
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
5V Electrical Characteristics
Limits in standard typeface are for TA=25oC, bold typeface applies over TA=-40oC to 85oC, VCC=5V, VEE=0V, VCM=2.0V,
VO=VCC/2 and RL>1MΩ, unless otherwise specified. (Note 2)
Parameter
Symbol
Conditions
Min
Typ
Max
7
Unit
1.7
VIO
Input Offset Voltage
mV
9
15
5
250
500
50
IB
Input Bias Current
Input Offset Current
nA
IIO
VCM
ICC
nA
V
150
Input Common Mode Voltage
Range
for CMRR≥50dB
-0.1
4.2
210
100
440
VO=VCC/2, AVCL=1, No load
Supply Current
µA
615
84
GV
RL=2kΩ
Large Signal Voltage Gain
dB
80
Common Mode Rejection
Ratio
0≤VCM≤4V
CMRR
PSRR
50
50
63
60
dB
dB
Power Supply Rejection
Ratio
2.7V≤VCC≤5V VO=1V, VCM=1V
ISOURCE VO=0V
5
60
mA
mA
Output Short Circuit Current
ISINK
VO=5V
10
160
4.96
4.7
4.6
4.9
4.8
RL=2kΩ to 2.5V
VOH
V
4.99
120
65
RL=10kΩ to 2.5V
RL=2kΩ to 2.5V
RL=10kΩ to 2.5V
Output Voltage Swing
300
400
180
280
VOL
mV
Slew Rate
SR
GBWP
φM
1
1
V/µs
MHz
deg
CL=200pF
Gain Bandwidth Product
Phase Margin
60
10
Gain Margin
dB
GM
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
5
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Typical Performance Characteristics
300
250
200
150
100
50
300
280
260
240
220
200
180
160
140
120
100
VO=VCC/2
No Load
VO=VCC/2
No Load
VCC=5V
TA= -40oC
TA=25OC
TA=85OC
VCC=2.7V
0
0
1
2
3
4
5
6
-40
-20
0
20
40
60
80
Temperature (OC)
Supply Voltage (V)
Figure 4. Supply Current vs. Supply Voltage
Figure 5. Supply Current vs. Temperature
60
1.2
VEE=0V
AV=1
VIN=1Vp-p
RL=10KΩ to 1/2VCC
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
VO short to VEE
50
40
30
20
10
Falling Edge
Rising Edge
2.5
3.0
3.5
4.0
4.5
5.0
5.5
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Supply Voltage (V)
Supply Voltage (V)
Figure 6. Slew Rate vs. Supply Voltage
Figure 7. Output Short Circuit Current vs. Supply Voltage
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
6
Data sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Typical Performance Characteristics (Continued)
100
160
VEE=0V
VEE=0V
O to VEE
V
O short to VCC
90
80
70
60
50
40
30
20
10
0
140
120
100
80
V
VCC=5V
60
40
20
VCC=2.7V
40
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-40
-20
0
20
60
80
Supply Voltage (V)
Temperature (OC)
Figure 9. Output Short Circuit Current
vs.Temperature
Figure 8. Output Short Circuit Current
vs. Supply Voltage
200
10
1
VEE=0V
VO to VCC
VCC=5V, VEE=0
180
160
140
120
100
80
VCC=5V
0.1
60
0.01
40
VCC=2.7V
20
0
1E-3
-40.0
-20.0
0.0
20.0
40.0
60.0
80.0
0.1
1
10
100
Source Current (mA)
Temperature (OC)
Figure 10. Output Short Circuit Current
vs.Temperature
Figure 11. Output Voltage
vs.Output Source Current
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
7
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Typical Performance Characteristics (Continued)
10
1
10
VCC=2.7V
VEE=0V
VCC=5V
VEE=0
1
0.1
0.01
0.1
1E-3
0.1
1
10
0.1
1
10
100
Source Current (mA)
Sink Current (mA)
Figure 13. Output Voltage vs.Output Sink Current
Figure 12. Output Voltage vs.Output Source Current
10
100
RL=10KΩ to VCC/2
VCC=2.7V
90
V
EE=0V
80
Negative Swing_VOL
70
60
50
40
30
1
20
Positive Swing_VCC-VOH
0.1
10
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1
10
Sink Current (mA)
Supply Voltage (V)
Figure 14. Output Voltage vs.Output Sink Current
Figure 15. Output Voltage Swing vs. Supply Voltage
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
8
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Typical Performance Characteristics (Continued)
100
90
80
70
60
50
40
30
20
10
0
100
80
80
70
60
50
40
30
20
10
0
RL=10KΩ to VCC/2
RL=620Ω
RL=2KΩ
RL=100KΩ
Negative Swing_VOL
VCC=5V
60
Phase Margin
VCC=2.7V
40
20
0
RL=620Ω
RL=2KΩ
RL=100KΩ
Gain
VCC=5V
Positive Swing_VCC-VOH
VCC=2.5V, VEE=-2.5V
CL=0
VCC=2.7V
-20
-10
10k
100k
Frequency (Hz)
1M
-40
-20
0
20
40
60
80
Temperature (OC)
Figure 16. Output Voltage Swing vs.Temperature
Figure 17. Gain and Phase
vs. Frequency and Resistive Load
100
90
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
100
80
VCC=2.5V
EE=-2.5V
RL=100KΩ
90
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
V
CL=100pF
CL=200pF
CL=470pF
CL=1000pF
CL=100pF
CL=200pF
CL=1000pF
Phase Margin
Phase Margin
CL=100pF
CL=200pF
CL=470pF
CL=1000pF
CL=100pF
CL=200pF
CL=1000pF
Gain
Gain
-10
-20
-30
-40
-10
-20
-30
-40
-10
-20
-30
VCC=2.5V, VEE=-2.5V
RL=620Ω
-10
-20
10k
100k
1M
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
Figure 18. Gain and Phase
vs. Frequency and Capacitive Load
Figure 19. Gain and Phase
vs. Frequency and Capacitive Load
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
9
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Typical Performance Characteristics (Continued)
V
=5V, V =0V
EE
CC
VCC=2.5V, VEE=-2.5V
RL=10KΩ
AV=1
RL=2KΩ
IN=100mVp-p
Unity Gain
V
1
VIN
0.1
VO=1Vp-p
VOUT
0.01
1E-3
VO=2.5Vp-p
10k
20
100
1k
100k
Frequency (Hz)
Figure 20. THD+N vs. Frequency
Figure 21. Non-Inverting Input Small Signal
Pulse Response
V
=5V, V =0V
EE
VCC=2.5V
CC
RL=2KΩ
IN=1Vp-p
Unity Gain
VEE=-2.5V
VIN
V
CL=50pF,
RL=2KΩ
VIN
VIN=100mVp-p
Unity Gain
VOUT
VOUT
Figure 22. Non-Inverting Input Large Signal
Pulse Response
Figure 23. Non-Inverting Input Small Signal Response
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
10
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Typical Performance Characteristics (Continued)
VCC=2.5V
VEE=-2.5V
VIN
CL=200pF,
RL=2KΩ
VIN=100mVp-p
Unity Gain
VOUT
Figure 24. Non-Inverting Input Small Signal Response
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
11
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Mechanical Dimensions
SOIC-8
Unit: mm(inch)
4.700(0.185)
0.320(0.013)
1.350(0.053)
1.750(0.069)
5.100(0.201)
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
TYP
6.200(0.244)
D
20:1
0.800(0.031)
0.100(0.004)
0.300(0.012)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
0.190(0.007)
0.250(0.010)
1°
5°
0.330(0.013)
0.510(0.020)
0.900(0.035)
)
06
(0.0
150
R0.
0.450(0.017)
0.800(0.031)
Note: Eject hole, oriented hole and mold mark is optional.
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
12
Data sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Mechanical Dimensions (Continued)
TSSOP-8
Unit: mm(inch)
SEE DETAIL A
2.900(0.114)
3.100(0.122)
0.050(0.002)
0.150(0.006)
0.090(0.004)
0.200(0.008)
1.200(0.047)
MAX
0.800(0.031)
1.050(0.041)
12 °
TOP & BOTTOM
R0.090(0.004)
R0.090(0.004)
GAGE PLANE
0°
8°
0.450(0.018)
0.750(0.030)
SEATING
PLANE
1.000(0.039)
REF
0.190(0.007)
0.300(0.012)
0.250(0.010)
TYP
1.950(0.077)
TYP
DETAIL A
Note: Eject hole, oriented hole and mold mark is optional.
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
13
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Mechanical Dimensions (Continued)
MSOP-8
Unit: mm(inch)
0.300(0.012)TYP
0.650(0.026)TYP
0°
6°
0.760(0.030)
0.970(0.038)
0.800(0.031)
1.200(0.047)
2.900(0.114)
3.100(0.122)
`
Note: Eject hole, oriented hole and mold mark is optional.
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
14
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
- Headquarters
- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-24162266, Fax: +86-21-24162277
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen Office
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Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
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BCD Semiconductor Corp.
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
30920 Huntwood Ave. Hayward,
China
Taiwan
Tel: +886-2-2656 2808
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