EU13003E [BCDSEMI]
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管
| 型号： | EU13003E |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR |
| 文件： | 总9页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
General Description
Features
The APT13003E series are high voltage, high speed
switching NPN Power transistors specially designed
for off-line switch mode power supplies with low out-
put power.
·
·
·
·
High Switching Speed
High Collector-Emitter Voltage
Low Cost
Bulk and Ammo Packing TO-92 Package and
TO-126 Package
The APT13003E series are available in TO-92 and TO-
126 packages.
Applications
·
·
Battery Chargers for Mobile Phone of BCD
Solution
Power Supply for DVD/STB of BCD Solution
TO-92
TO-92
TO-126
(Ammo Packing)
(Bulk Packing)
Figure 1. Package Types of APT13003E
Pin Configuration
Z Package
TO-92
U Package
TO-126
3
Base
Collector
Emitter
3
2
1
Emitter
Collector
Base
2
1
(Top View)
(Front View)
Figure 2. Pin Configurations of APT13003E
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Ordering Information
APT13003
-
E1: Lead Free
TR: Ammo
Blank: Bulk
Circuit Type
Package
Z: TO-92
U: TO-126
E: APT13003E
Package
Part Number
Marking ID
13003EZ-E1
Packing Type
Bulk
APT13003EZ-E1
APT13003EZTR-E1
APT13003EU-E1
TO-92
13003EZ-E1
EU13003E
Ammo
TO-126
Bulk
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
VCES
VCEO
VEBO
IC
Value
700
465
9
Unit
V
Collector-Emitter Voltage (VBE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current
V
V
1.5
A
Collector Peak Current (Pulse) (Note 2)
Base Current
ICM
3
A
IB
0.75
1.5
A
Base Peak Current (Pulse) (Note 2)
IBM
A
Power Dissipation, TA=25oC
For TO-92
PTOT
PTOT
TJ
1.1
W
W
Power Dissipation, TC=25oC
For TO-126
20
oC
oC
Operating Junction Temperature
150
-65 to 150
Storage Temperature Range
TSTG
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Pulse test for Pulse Width < 5ms, Duty Cycle ≤ 10%.
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Thermal Characteristics
Parameter
Symbol
Value
83.3
6.25
113.6
96
Unit
For TO-92
For TO-126
For TO-92
For TO-126
JC
θ
oC/W
R
Thermal Resistance (Junction-to-Case)
oC/W
RθJA
Thermal Resistance (Junction-to-Ambient)
Electrical Characteristics
o
( T =25 C, unless otherwise specified.)
C
Parameter
Symbol
Conditions
VCE=700V
Min
Typ
Max
Unit
Collector Cut-off Current
(VBE=-1.5V)
ICEV
10
μA
Collector-Emitter Sustaining
Voltage (IB=0)
V
CEO (sus)
IC=100μA
465
V
V
V
IC=0.5A, IB=0.1A
IC=1.0A, IB=0.25A
IC=0.5A, IB=0.1A
IC=1.0A, IB=0.25A
IC=0.3A, VCE=2V
IC=0.5A, VCE=2V
IC=1.0A, VCE=2V
VCB=10V, f=0.1MHZ
VCE=10V, IC=0.1A
0.17
0.29
0.3
0.4
1.0
1.2
Collector-Emitter Saturation
Voltage (Note 3)
VCE (sat)
VBE (sat)
Base-Emitter Saturation Voltage
(Note 3)
15
13
5
hFE
DC Current Gain (Note 3)
17
16
30
25
Output Capacitance
Cob
fT
pF
Current Gain Bandwidth Product
Turn-on Time with Resistive Load
4
MHz
ton
0.3
1
IC=1A, VCC=125V, IB1=0.2A,
μs
Storage Time with Resistive Load
Fall Time with Resistive Load
ts
tf
1.8
3
IB2=-0.2A, TP=25μS
0.28
0.4
Note 3: Pulse test for Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Typical Performance Characteristics
10
1
10
1
0.1
DC
DC
0.1
0.01
1E-3
0.01
1
10
100
1000
1
10
100
1000
Collector-Emitter Clamp Voltage VCE (V)
Collector-Emitter Clamp Voltage VCE (V)
Figure 4. Safe Operating Areas (TO-126 Package)
Figure 3. Safe Operating Areas (TO-92 Package)
2.00
125
100
75
50
25
0
IB=400mA
IB=300mA
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
IB=250mA
IB=200mA
IB=150mA
IB=100mA
IB=50mA
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
Case Temperature TC (oC)
Collector-Emitter Voltage VCE (V)
Figure 5. Power Derating Curve
Figure 6. Static Characteristics
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Typical Performance Characteristics (Continued)
40
35
30
25
20
15
10
5
10
TA=125oC
VCE=5V
VCE=1V
1
TA=25oC
TJ=125oC
TJ=25oC
0.1
hFE=5
0.01
0.1
1
0
0.01
0.1
1
Collector Current IC (A)
Collector Current IC (A)
Figure 8. Collector-Emitter Saturation Voltage
Figure 7. DC Current Gain
20
1.1
VCE=2V, IC=0.5A
1.0
0.9
0.8
0.7
0.6
0.5
18
16
14
12
10
TJ=25oC
TJ=125oC
hFE=5
25
50
75
100
125
150
0.1
1
Case Temperature (oC)
Collector Current IC (A)
Figure 10. hFE vs. Case Temperature
Figure 9. Base-Emitter Saturation Voltage
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Mechanical Dimensions
TO-92 (Bulk Packing)
Unit: mm(inch)
1.100(0.043)
3.430(0.135)
MIN
1.400(0.055)
0.360(0.014)
0.510(0.020)
0.000(0.000)
0.380(0.015)
Φ1.600(0.063)
MAX
4.400(0.173)
4.700(0.185)
0.380(0.015)
0.550(0.022)
1.270(0.050)
TYP
2.440(0.096)
2.640(0.104)
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Mechanical Dimensions (Continued)
TO-92 (Ammo Packing)
Unit: mm(inch)
4.400(0.173)
4.700(0.185)
1.100(0.043)
1.400(0.055)
1.270(0.050)
Typ
3.430(0.135)
MIN
4.500(0.177)
5.500(0.217)
0.360(0.014)
0.510(0.020)
0.000(0.000)
0.380(0.015)
Φ1.600(0.063)
MAX
0.380(0.015)
0.550(0.022)
2.540(0.100)
Typ
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
7
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Mechanical Dimensions (Continued)
TO-126
Unit: mm(inch)
2.500(0.098
7.400(0.291)
7.800(0.307)
2.900(0.114)
1.100(0.043)
1.500(0.059)
3.000(0.118)
3.200(0.126)
1.170(0.046)
1.370(0.054)
0.660(0.026)
0.860(0.034)
0.450(0.018)
0.600(0.024)
2.290(0.090)TYP
4.480(0.176)
4.680(0.184)
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
8
BCD Semiconductor Manufacturing Limited
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