MBR2045CTF-E1 [BCDSEMI]
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER; 高效率功率肖特基整流器
| 型号： | MBR2045CTF-E1 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER |
| 文件： | 总9页 (文件大小：445K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
General Description
Main Product Characteristics
IF(AV)
VRRM
TJ
2*10A
45V
High efficiency dual Schottky rectifier suited for
switch mode power supplies and other power convert-
ers. This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are required.
150oC
0.57V
VF(max)
MBR2045C is available in TO-220-3 and TO-220F-3
packages.
Mechanical Characteristics
Features
·
Case: Epoxy, Molded
·
Low Forward Voltage: 0.57V @125oC
Low Power Loss/High Efficiency
150oC Operating Junction Temperature
20 A Total (10A Each Diode Leg)
Guard-Ring for Stress Protection
High Surge Capacity
·
·
Epoxy Meets UL 94 V-0 @ 0.125 in
Weight (Approximately):
·
·
·
·
·
·
1.9 Grams (TO-220-3, TO-220F-3)
·
Finish: All External Surfaces Corrosion Resistant
and Terminal
·
·
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
Pb-Free Package
o
260 C Maximumfor 10 Seconds
Applications
·
·
·
Power Supply Output Rectification
Power Management
Instrumentation
TO-220-3
TO-220F-3
Figure 1. Package Types of MBR2045C
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Pin Configuration
T/TFPackage
(TO-220-3/TO-220F-3)
A2
A1
3
2
1
A2
K
K
A1
(Front View)
Figure 2. Pin Configuration of MBR2045C
Figure 3. Internal Structure of MBR2045C
Ordering Information
MBR2045C
-
E1: Lead Free
Blank: Tube
Circuit Type
Package
T: TO-220-3
TF: TO-220F-3
Package
TO-220-3
TO-220F-3
Part Number
MBR2045CT-E1
MBR2045CTF-E1
Marking ID
Packing Type
Tube
MBR2045CT-E1
MBR2045CTF-E1
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR) TC=139oC
IF(AV)
IFRM
IFSM
10
20
A
A
A
Peak Repetitive Forward Current
(Rated V , Square Wave, 20 kHz) T =137oC
R
C
Non Repetitive Peak Surge Current (Surge applied at rated
load conditions half wave, single phase, 60 Hz)
150
IRRM
TJ
Peak Repetitive Reverse Surge Current (2.0µs, 1.0kHz)
Operating Junction Temperature (Note 2)
Storage Temperature Range
1.0
A
oC
150
oC
TSTG
dv/dt
-65 to 150
10000
Voltage Rate of Change (Rated VR)
V/µs
ESD (Machine Model=C)
>400
V
V
ESD (Human Body Model=3B)
>8000
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/R
.
JA
θ
Thermal Characteristics
Parameter
Symbol
Condition
Junction to Case
Value
Unit
TO-220-3
TO-220F-3
TO-220-3
2.2
R
JC
θ
oC/W
4.5
60
Maximum Thermal Resistance
R
Junction to Ambient
JA
θ
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Electrical Characteristics (Each Diode Leg)
Parameter
Condition
IF=10 A, TC=25oC
Symbol
Typ
0.59
0.50
0.71
0.67
Max
Unit
0.65
0.57
0.84
0.72
IF=10 A, TC=125oC
Maximum Instantaneous Forward
Voltage Drop (Note 3)
VF
V
IF=20 A, TC=25oC
IF=20 A, TC=125oC
Rated DC Voltage, TC=125oC
5
15
Maximum Instantaneous Reverse
Current (Note 3)
IR
mA
Rated DC Voltage, TC=25oC
0.01
0.1
Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Typical Performance Characteristics
100
10
1
25oC
125oC
150oC
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF, Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Voltage
10
1
0.1
0.01
25oC
1E-3
1E-4
1E-5
1E-6
1E-7
100oC
125oC
150oC
0
10
20
30
40
50
VR, Reverse Voltage (V)
Figure 5. Typical Reverse Current
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Typical Performance Characteristics (Continued)
1000
800
600
TJ=25oC
400
200
0
0
10
20
30
40
VR, Reverse Voltage (V)
Figure 6. Capacitance
14
12
10
8
6
Square
4
2
0
100
110
120
130
140
150
160
Case Temperature (oC)
Figure 7. Average Forward Current vs. Case Temperature (Square, Each Diode)
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Mechanical Dimensions
TO-220-3
Unit: mm(inch)
9.660(0.380)
2.580(0.102)
3.380(0.133)
10.660(0.420)
φ3.560(0.140)
4.060(0.160)
0.550(0.022)
1.350(0.053)
0.200(0.008)
φ1.500(0.059)
3.560(0.140)
4.820(0.190)
2.080(0.082)
2.880(0.113)
7°
0.381(0.015)
1.160(0.046)
1.760(0.069)
60°
0.813(0.032)
8.763(0.345)
0.381(0.015)
2.540(0.100)
0.356(0.014)
0.406(0.016)
2.540(0.100)
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Mechanical Dimensions (Continued)
TO-220F-3
Unit: mm(inch)
9.800(0.385)
10.200(0.401)
4.400(0.173)
4.700(0.185)
3.100(0.122)
φ
2.700(0.106)
3.000(0.118)
3.300(0.130)
3.400(0.134)
3.600(0.142)
7.000(0.275)
7.400(0.291)
15.800(0.621)
16.200(0.637)
2.700(0.106)
3.100(0.122)
2.000(0.079)
2.800(0.110)
13.000(0.511)
13.600(0.535)
1.200(0.047)
0.900(0.035)
1.500(0.059)
1.200(0.047)
1
2
3
0.650(0.026)
0.850(0.033)
0.600(0.024)
0.800(0.031)
2.550(0.100)
2.550(0.100)
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
8
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
- Headquarters
- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
800 Yi Shan Road, Shanghai 200233, China
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Shenzhen Office
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Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
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BCD Semiconductor Corp.
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相关型号：
MBR2045CTI
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-251, GREEN, PLASTIC, IPAK-3
DIODES
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