BCP030C_18 概述
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCP030C_18 数据手册
通过下载BCP030C_18数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BCP030C
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm)
The BeRex BCP030C is a GaAs Power pHEMT with a nominal 0.25-micron by 300-micron gate making this product
ideally suited for applications where high-gain and medium power in the DC to 26.5 GHz frequency range are
required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP030C is
produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
PRODUCT FEATURES
•
•
•
24.5 dBm Typical Output Power
13.5 dB Typical Gain @ 12 GHz
0.25 X 300 Micron Recessed Gate
APPLICATIONS
•
•
•
Commercial
Military / Hi-Rel.
Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
TEST
PARAMETER/TEST CONDITIONS
FREQ.
MIN.
TYPICAL
MAX.
UNIT
dBm
dB
12 GHZ
23.0
23.0
12.0
9.0
24.5
24.5
13.5
10.5
60
P1dB
G1dB
PAE
Output Power @ P1dB (Vds = 8V, Id = 45mA)
Gain @ P1dB (Vds = 8V, Id = 45mA)
PAE @ P1dB (Vds = 8V, Id = 45mA)
18 GHz
12 GHZ
18 GHz
12 GHZ
18 GHz
%
55
NF
Idss
Noise figure (Vds = 2V, Id = 15 mA)
12 GHz
1.1
90
dB
mA
mS
V
Saturated Drain Current (Vgs = 0V, Vds = 2.0V)
Transconductance (Vds = 2V, Id = 45mA)
Pinch-off Voltage (Ids = 0.3mA, Vds = 2V)
60
120
-12
Gm
115
-1.2
-15
-13
115
Vp
-2.5
BVgd
BVgs
Rth
Drain Breakdown Voltage (Ig = -0.3mA, source open)
Source Breakdown Voltage (Ig = -0.3mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
V
V
°C/W
www.berex.com
Specifications are subject to change without notice. ©BeRex 2017
BeRex, Inc. 3350 Scott Blvd. #6101 Santa Clara 95054 tel. (408) 452-5595
Rev. 1.1
February 2017
BCP030C
MAXIMUM RATING (Ta = 25° C)
PARAMETERS
ABSOLUTE
12 V
CONTINUOUS
Vds
Vgs
Id
Drain-Source Voltage
Gate-Source Voltage
Drain Current
8 V
-3 V
Idss
-6 V
Idss
Igsf
Pin
Tch
Tstg
Pt
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
18 mA
22 dBm
175°C
3 mA
@ 3 dB compression
150°C
-60°C – 150°C
1.3 W
-60°C – 150°C
1.1 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
PIN_POUT/Gain, PAE (12 GHz)
PIN_POUT/Gain, PAE (18 GHz)
Frequency = 12 GHz
Vds = 8 V, Ids = 45mA (Tuned for Power)
Frequency = 18 GHz
Vds = 8 V, Ids = 45mA (Tuned for Power)
www.berex.com
Specifications are subject to change without notice. ©BeRex 2017
BeRex, Inc. 3350 Scott Blvd. #6101 Santa Clara 95054 tel. (408) 452-5595
Rev. 1.1
February 2017
BCP030C
S-PARAMETERS (Vds = 8V, Ids = 45mA)
FREQ.
[GHZ]
1.0
S11
[MAG]
0.98
S11
[ANG.]
-23.86
S21
[MAG]
7.38
S21
[ANG.]
162.50
S12
[MAG]
0.014
S12
[ANG.]
74.60
S22
[MAG]
0.81
S22
[ANG.]
-6.76
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
0.94
0.89
0.84
0.79
0.76
0.75
0.74
0.75
0.76
0.77
0.79
0.81
0.83
0.85
0.86
0.88
0.89
0.90
0.91
0.90
0.90
0.89
0.90
0.90
0.92
-46.46
-69.03
-91.85
-113.68
-134.40
-153.92
-170.69
174.28
161.67
150.68
140.76
131.79
124.13
116.58
110.76
106.16
100.57
96.91
7.02
6.57
6.05
5.52
4.98
4.49
4.01
3.58
3.21
2.88
2.61
2.38
2.16
1.97
1.79
1.66
1.52
1.39
1.26
1.15
1.05
0.95
0.87
0.80
0.72
146.70
131.52
117.38
103.92
91.19
79.98
69.58
59.64
50.90
42.68
34.50
27.20
20.07
12.99
6.68
0.030
0.038
0.046
0.054
0.056
0.057
0.056
0.056
0.051
0.050
0.049
0.049
0.049
0.046
0.047
0.049
0.051
0.051
0.051
0.054
0.054
0.058
0.056
0.052
0.059
66.16
55.17
47.41
38.46
30.31
24.78
19.61
14.51
10.25
9.53
8.41
6.81
3.22
4.27
5.07
3.61
1.39
2.67
0.79
0.75
0.71
0.67
0.63
0.60
0.57
0.55
0.53
0.52
0.51
0.49
0.47
0.46
0.44
0.43
0.42
0.42
0.41
0.42
0.44
0.46
0.48
0.51
0.55
-13.54
-19.74
-23.65
-27.78
-31.80
-34.64
-37.56
-41.45
-44.56
-48.73
-53.13
-57.19
-61.62
-66.25
-71.83
-79.17
-86.51
-95.77
-107.58
-118.49
-129.50
-140.82
-151.10
-159.63
-168.32
0.71
-6.23
-12.56
-18.91
-24.47
-29.70
-35.59
-39.96
-44.03
-48.59
93.43
91.80
90.93
90.40
90.80
91.15
90.01
-1.59
-0.89
-1.15
-2.37
0.12
-1.19
1.93
Note: S-parameters include bond wires. Reference planes are at edge of substrates shown on “Wire Bonding Information” figure below.
www.berex.com
Specifications are subject to change without notice. ©BeRex 2017
BeRex, Inc. 3350 Scott Blvd. #6101 Santa Clara 95054 tel. (408) 452-5595
Rev. 1.1
February 2017
BCP030C
WIRE BONDING INFORMATION
Using 1 mil. diameter, Au bonding wires.
1. Gate to input transmission line
- Length and Height : 600 µm x 250 µm
- Number of wire(s): 1
2. Drain to output transmission line
- Length and Height : 400 µm x 250 µm
- Number of wire(s) : 1
3. Source to ground plate
- Length and Height : 250 µm x 300 µm
- Number of wire(s) : 4
DISCLAIMER
BEREX RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN. BEREX DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
BEREX PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES WITHOUT THE
EXPRESS WRITTEN APPROVAL OF BEREX.
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use
provided in labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
www.berex.com
Specifications are subject to change without notice. ©BeRex 2017
BeRex, Inc. 3350 Scott Blvd. #6101 Santa Clara 95054 tel. (408) 452-5595
Rev. 1.1
February 2017
BCP030C_18 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
BCP030T | BEREX | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP | 获取价格 | |
BCP030T-70 | BEREX | HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25μm x 300μm gate) | 获取价格 | |
BCP040C | BEREX | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP | 获取价格 | |
BCP040C_18 | BEREX | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP | 获取价格 | |
BCP060C | BEREX | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP | 获取价格 | |
BCP060C_18 | BEREX | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP | 获取价格 | |
BCP060T | BEREX | HIGH EFFICIENCY pHEMT POWER FET CHIP | 获取价格 | |
BCP060T-70 | BEREX | HIGH EFFICIENCY HETEROJUNCTION POWER FET | 获取价格 | |
BCP080C | BEREX | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP | 获取价格 | |
BCP080C_18 | BEREX | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP | 获取价格 |
BCP030C_18 相关文章
- 2024-09-20
- 6
- 2024-09-20
- 9
- 2024-09-20
- 8
- 2024-09-20
- 6