BL-LS1311PD [BETLUX]
SMD SILICON PHOTO DIODES; SMD硅光电二极管
| 型号： | BL-LS1311PD |
| 厂家： | 
BETLUX ELECTRONICS |
| 描述： | SMD SILICON PHOTO DIODES |
| 文件： | 总3页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD SILICON PHOTO DIODES
BL-LS1311PD
Features:
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3.5mmx2.8mm SMD, 1.9mm THICKNESS PLCC2 package, SILICON PHOTO DIODES
Choice of various viewing angles.
Diffused and Water clear lens are available.
Fast response time.
High photo sensitivity.
Small junction capacitance.
The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitter.
PACKAGE: 2KPCS/REEL.
RoHs Compliance
Applications:
High speed photo detector
Camera
Infrared remote controller for TVs VCR, audio equipment, air conditioner, etc.
Absolute Maximum Ratings at Ta=25
Parameter
Symbol
Rating
Unit
Power Dissipation
Reverse Voltage
Pd
VR
160
35
mW
V
Operation Temperature
Storage Temperature
TOPR
TSTG
-40 to +100
-40 to +100
Max.260±5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
Lead Soldering Temperature
TSOL
Electronic Optical Characteristics at Ta=25
Items
Wavelength of Peak
Sensitivity
Open Circuit Voltage
Short Circuit Current
Symbol Min.
Typ.
Max.
Unit
Condition
λP
-
900
-
nm
-
VOC
ISC
-
-
0.40
2
-
-
V
uA
H=5mW/cm2
λP=900nm
H=5mW/cm2
λP=900nm
VR=5V
Reverse Light Current
IL
-
-
3.5
-
-
uA
nA
H=0mW/cm2
VR=10V
Reverse Dark Current
ID
10
Reverse Break down
Voltage
Viewing angle
H=0mW/cm2
IR=100uA
VBR
2θ1/2
Tr/Tf
35
-
170
120
6/6
-
-
-
V
Deg
nS
RL=1000ꢀ
VR=10V
Rise/Fall Time
-
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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SMD SILICON PHOTO DIODES
BL-LS1311PD
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is 0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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SMD SILICON PHOTO DIODES
BL-LS1311PD
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Tape Specifications
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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