KBPC10005 [BILIN]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器
KBPC10005
元器件型号: KBPC10005
生产厂家: GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED    GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED
描述和应用:

SILICON BRIDGE RECTIFIERS
硅桥式整流器

PDF文件: 总2页 (文件大小:123K)
下载文档:  下载PDF数据表文档文件
型号参数:KBPC10005参数
是否Rohs认证 符合
生命周期Active
IHS 制造商COMCHIP TECHNOLOGY CO LTD
包装说明S-XUFM-W4
Reach Compliance Codecompliant
ECCN代码EAR99
HTS代码8541.10.00.80
风险等级5.76
Is SamacsysN
其他特性UL RECOGNIZED
最小击穿电压50 V
外壳连接ISOLATED
配置BRIDGE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型BRIDGE RECTIFIER DIODE
最大正向电压 (VF)1.1 V
JESD-30 代码S-XUFM-W4
最大非重复峰值正向电流240 A
元件数量4
相数1
端子数量4
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流10 A
封装主体材料UNSPECIFIED
封装形状SQUARE
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)260
最大重复峰值反向电压50 V
子类别Bridge Rectifier Diodes
表面贴装NO
端子形式WIRE
端子位置UPPER
处于峰值回流温度下的最长时间30
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
BL
FEATURES
GALAXY ELECTRICAL
KBPC10005(W)- - -KBPC1010(W)
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 10.0 A
SILICON BRIDGE RECTIFIERS
Rating to 1000V PRV
Surge overload rating to 150 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Mounting: thru hole for # 6 screw
mounting
KBPC-W
.452
(11.5)
MAX
.042(1.1)
.090(2.0)
.591
(15.0)
MAX
1.181(30.0)
1.102(28.0)
HOLE FOR
NO.8 SCREW
AC
.732(18.6)
.692(17.6)
-
+
.468(11.9)
.429(10.9)
1.181(30.0)
1.102(28.0)
AC
.732(18.6)
.692(17.6)
.033x 250
(0.8x 6.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
KBPC
KBPC
KBPC
1002(W)
KBPC
KBPC
KBPC
KBPC
1010(W)
10005(W) 1001(W)
1004(W) 1006(W) 1008(W)
UNITS
V
V
V
A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=50
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
10.0
600
420
600
800
560
800
1000
700
1000
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 5.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
150.0
A
V
F
I
R
T
J
T
STG
1.1
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
μA
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287037
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
KBPC10005(W)
-
- -
KBPC1010(W)
FIG.2 -- FORWARD DERATING CURVE
PEAK FORWARD SURGE CURRENT,
150
120
10
8
6
4
2
0
0
T
A
=50
Resistive or
Inductive Load
Tc=50
AMPERES
8.3ms Single Half Sine Wave
T
J
=125
90
C
AS
E
60
30
50
100
150
0
1
10
100
NUMBER OF CYCLES AT 60H
Z
AMBIENT TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT,
AMPERES
100
INSTANTANEOUS REVERSE CURRENT,
MICRO AMPERES
10
10
Tc=100
1.0
1.0
 
T
J
=25
Pulse Width
=300uS
0.1
T
J
=25
0.1
.01
0
20
40
60
80
100
120
140
.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PERCENT OF RATED PEAK REVERSE VOLTAGE
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
www.galaxycn.com
Document Number 0287037
BL
GALAXY ELECTRICAL
2.
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