PG201 [BILIN]

FAST RECOVERY RECTIFIER; 快速恢复整流
PG201
元器件型号: PG201
生产厂家: GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED    GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED
描述和应用:

FAST RECOVERY RECTIFIER
快速恢复整流

快速恢复二极管
PDF文件: 总2页 (文件大小:67K)
下载文档:  下载PDF数据表文档文件
型号参数:PG201参数
生命周期Obsolete
零件包装代码DO-15
包装说明O-PALF-W2
针数2
Reach Compliance Codeunknown
HTS代码8541.10.00.80
风险等级5.66
应用FAST RECOVERY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.3 V
JEDEC-95代码DO-15
JESD-30 代码O-PALF-W2
最大非重复峰值正向电流70 A
元件数量1
相数1
端子数量2
最大输出电流2 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
认证状态Not Qualified
最大重复峰值反向电压100 V
最大反向电流5 µA
最大反向恢复时间0.15 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
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FEATURES
Low cost
GALAXY ELECTRICAL
PG201 - - - PG208
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 2.0 A
FAST RECOVERY RECTIFIER
DO - 15
Diffused junction
Glass passivated junction
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
PG
201
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
PG
202
200
140
200
PG
203
300
210
300
PG
204
400
280
400
2.0
PG
205
500
350
500
PG
206
600
420
600
PG
207
800
560
800
PG
208
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
70.0
A
Maximum instantaneous forw ard voltage
@ 2.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.3
5.0
100.0
250
18
45
- 55---- +175
- 55---- + 175
500
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261016
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
t
rr
50
N.1.
10
N.1.
PG201 - - - PG208
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
1
N.1.
( - )
0
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
( + )
-0.25A
-1.0A
1cm
NOTE
S:1.RISETIM =75ns M INP IM E
E
AX. UT P DANCE
=1M .22pF
2.RISETIM =10ns M SOURCEIM E
E
AX.
P DANCE
=5O
SE TIM BASEFOR 50/100 ns /cm
T E
FIG.2 --FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT
FIG.3 --PEAK FORWARD SURGE CURRENT
70
AVERAGE FORWARD CURRENT
AMPERES
2.4
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
2.0
56
1.6
AMPERES
42
1.2
T
J
=125
8.3ms Single Half
Sine-Wave
28
0.8
0.4
14
0
25
50
75
100
125
150
175
0
1
10
100
AMBIENT TEMPERATURE,
FIG.4--FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT
AMPERES
NUMBER OF CYCLES AT 60 Hz
FIG.5-- TYPICAL JUNCTION CAPACITANCE
100
100
10
T
J
=25
Pulse Width=300
µ
S
JUNCTION CAPACITANCE,pF
60
40
20
10
4
2
1.0
0.4
0.2
0.1
0.06
4
2
1
.1
TJ=25
f=1MHz
0.02
0.01
0.6 0.8
1.0
1.2
1.4
1.6
1.8
2.0
.2
.4
1.0
2
4
10
20
40
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0261016
BL
GALAXY ELECTRICAL
2.
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