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元器件品牌
2SC3356W
[BILIN]
Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
元器件型号：
2SC3356W
生产厂家：
GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED
描述和应用：
Silicon Epitaxial Planar Transistor
硅外延平面晶体管
晶体 晶体管
PDF文件：
总4页 (文件大小：165K)
下载文档：
下载PDF数据表文档文件
型号参数：2SC3356W参数
查看货源
2SC3356-X-AE3-R
HIGH FREQUENCY LOW NOISE AMPLIFIER
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156
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25
UTC-IC
2SC3357
NPN Silicon RF Transistor
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156
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108
KEXIN
2SC3357
isc Silicon NPN RF Transistor
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156
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301
ISC
2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
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531
RENESAS
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
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2396
NEC
2SC3357
Low Noise and High Gain High power gain : MAG = 10 dB TYP. IC = 40 mA, f = 1 GHz
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241
TYSEMI
2SC3357
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3
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42
RENESAS
2SC3357(NE85634)
Discrete
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400
ETC
2SC3357-A
暂无描述
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2
NEC
2SC3357-A
2SC3357-A
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2
RENESAS
2SC3357-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3
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3
NEC
2SC3357-E-HF
NPN Transistors
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156
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0
KEXIN
2SC3357-F-HF
NPN Transistors
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156
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0
KEXIN
2SC3357-HF
NPN Transistors
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156
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0
KEXIN
2SC3357-H-HF
NPN Transistors
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156
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0
KEXIN
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