ACPM-5008-BLK [BOARDCOM]
UMTS Band8 (880-915MHz) 3x3mm Power Amplifi er Module;
| 型号： | ACPM-5008-BLK |
| 厂家： | 
Broadcom Corporation. |
| 描述： | UMTS Band8 (880-915MHz) 3x3mm Power Amplifi er Module 射频 微波 |
| 文件： | 总13页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACPM-5008-TR1
UMTS Band8 (880-915MHz) 3x3mm Power Amplifier Module
Data Sheet
Description
Features
The ACPM-5008-TR1 is a fully matched 10-pin surface Thin Package (0.9mm typ)
mount module developed to support multimode applica-
tions including UMTS Band8. The ACPM-5008-TR1 meets
stringent linearity requirements up to 28.5dBm output
power for UMTS Rel.99. The 3mmx3mm form factor
package is self contained, incorporating 50ohm input and
output matching networks. The PA also contains internal
DC blocking capacitors for RF input and output ports.
Excellent Linearity
3-mode power control with Vbp and Vmode
– Bypass / Mid Power Mode / High Power Mode
High Efficiency at max output power
10-pin surface mounting package
Internal 50ohm matching networks for both RF input
th
The ACPM-5008-TR1 features 5 generation of CoolPAM
and output
(CoolPAM5) circuit technology which supports 3 power
modes – active bypass, mid power and high power modes.
The CoolPAM is stage bypass technology enhancing
PAE (power added efficiency) at low and medium power
range. The active bypass feature is added to CoolPAM5 to
enhance the PAE further at low output range and it enables
the PA to have exceptionally low quiescent current. It
dramatically saves the average power consumption and
accordingly extends the talk time of mobiles and prolongs
a battery life.
Integrated coupler
– Coupler and Isolation ports for daisy chain
Lead-free, RoHS compliant, Green
Applications
UMTS (WCDMA, HSDPA, HSUPA, HSPA+)
LTE
Ordering Information
A directional coupler is integrated into the module and
both coupling and isolation ports are available exter-
nally, supporting daisy chain. The integrated coupler
has excellent coupler directivity, which minimizes the
coupled output power variation or delivered power
variation caused by the load mismatch from the antenna.
The coupler directivity, or the output power variation into
the mismatched load, is critical to the TRP and SAR per-
formance of the mobile phones in real field operations as
well as compliance tests for the system specifications.
Part Number
Number of Devices
Container
ACPM-5008-TR1
1000
178mm (7”)
Tape/Reel
ACPM-5008-BLK
100
Bulk
Description (Cont.)
baseband chipsets. All of the digital control input pins
such as the Ven, Vmode and Vbp are fully CMOS compat-
ible and can operate down to the 1.35V logic. The current
consumption by digital control pins is negligible.
TheACPM-5008hasintegratedon-chipVrefandon-module
bias switch as the one of the key features of the CoolPAM-5,
so an external constant voltage source is not required,
eliminating the external LDO regulators and switches
from circuit boards of mobile devices. It also makes the PA
fully digital-controllable by the Ven pin that simply turns
the PA on and off from the digital control logic input from
The power amplifier is manufactured on an advanced
InGaP HBT (hetero-junction Bipolar Transistor) MMIC
(microwave monolithic integrated circuit) technology
offering state-of-the-art reliability, temperature stability
and ruggedness.
Absolute Maximum Ratings
No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value.
Operation of any single parameter outside these conditions with the remaining parameters set at or below nominal
values may result in permanent damage.
Description
Min.
Typ.
0
Max.
10
Unit
dBm
V
RF Input Power (Pin)
DC Supply Voltage (Vcc1, Vcc2)
Enable Voltage (Ven)
0
3.4
2.6
2.6
2.6
25
5.0
0
3.3
V
Mode Control Voltage (Vmode)
Bypass Control (Vbp)
0
3.3
V
0
3.3
V
Storage Temperature (Tstg)
-55
+125
°C
Recommended Operating Condition
Description
Min.
Typ.
Max.
Unit
DC Supply Voltage (Vcc1, Vcc2)
Enable Voltage (Ven)
3.2
3.4
4.2
V
Low
High
0
1.35
0
2.6
0.5
3.1
V
V
Mode Control Voltage (Vmode)
Bypass Control Voltage (Vbp)
Low
High
0
1.35
0
2.6
0.5
3.1
V
V
Low
High
0
1.35
0
2.6
0.5
3.1
V
V
Operating Frequency (fo)
Ambient Temperature (Ta)
880
-20
915
85
MHz
°C
25
Operating Logic Table
Pout (HSDPA,
HSUPA MPR=0dB)
Power Mode
Ven
Vmode
Low
Vbp
X
Pout (Rel99)
~ 28.5 dBm
~ 17 dBm
~ 7.5 dBm
–
High Power Mode
Mid Power Mode
Bypass Mode
High
High
High
Low
~ 27.5 dBm
~ 16 dBm
~ 6.5 dBm
–
High
High
Low
Low
High
Low
Shut Down Mode
2
Electrical Characteristics for WCDMA Mode
– Conditions: Vcc = 3.4V, Ven = 2.6V, Ta = 25°C, Zin/Zout = 50ohm
– Signal Configuration: 3GPP (DPCCH + 1DPDCH) Up-Link unless specified otherwise.
Characteristics
Operating Frequency Range
Maximum Output Power
(High Power Mode)
Condition
Min.
880
28.5
27.5
24.5
14
Typ.
–
Max.
915
Unit
MHz
dBm
dBm
dB
dB
dB
%
%
Rel99
HSDPA, HSUPA MPR=0dB
High Power Mode, Pout=28.5dBm
Mid Power Mode, Pout=17dBm
Bypass Mode, Pout=7dBm
High Power Mode, Pout=28.5dBm
Mid Power Mode, Pout=17dBm
Bypass Mode, Pout=7dBm
High Power Mode, Pout=28.5dBm
Mid Power Mode, Pout=17dBm
Bypass Mode, Pout13.5dBm
Bypass Mode, Pout=7dBm
Bypass Mode, Pout=3.5dBm
High Power Mode
28
18
11
40
20.7
12.3
520
70
50
11
8.5
123
19
3.1
5
Gain
8
36.5
16.1
6.8
Power Added Efficiency
Total Supply Current
%
570
90
mA
mA
mA
mA
mA
mA
mA
mA
A
20
90
10
1
155
30
5
Quiescent Current
Enable Current
Mid Power Mode
Bypass Mode
High Power Mode
Mid Power Mode
5
A
Bypass Mode
5
A
Mid Power Mode
5
A
Mode Control Current
Bypass Mode
5
A
Bypass Control Current
Bypass
5
A
Total Current in Power-down mode
Ven=0V, Vmode=0V, Vbp=0V
Pout ≤ (max power – MPR)
5
A
UMTS Adjacent
Channel
5 MHz offset
10 MHz offset
14.8MHz offset
-42
-57
-66
-36
-46
-58
dBc
dBc
dBc
Leakage Ratio
(ACLR)
LTE ACLR
LTE to LTE, E-UTRAACLR
Pout ≤ (maximum power – MPR)
UTRAACLR1
Pout ≤ (maximum power – MPR)
-33
-36
-39
dBc
dBc
dBc
UTRAACLR2
Pout ≤ (maximum power – MPR)
Harmonic
Suppression
Second
Third
High Power Mode, Pout=28.5dBm
-43
-66
-35
-42
dBc
dBc
Input VSWR
Stability (Spurious Output)
2.5:1
-60
VSWR 5:1, All phase
dBc
Rx Band Noise Power (Vcc=4.2V)
GPS Band Noise Power (Vcc=4.2V)
ISM Band Noise Power (Vcc=4.2V)
Rx Band Gain (925-960MHz)
GPS Band Gain (1574-1577MHz)
GLONASS Band Gain (1597-1607MHz)
ISM Band Gain (2400-2483.5MHz)
Media Band Gain (716-728MHz)
Continued on next page...
High Power Mode, Pout=28.5dBm
High Power Mode, Pout=28.5dBm
High Power Mode, Pout=28.5dBm
Where G is gain in Tx band
Where G is gain in Tx band
Where G is gain in Tx band
Where G is gain in Tx band
Where G is gain in Tx band
-136.5
-150
-158
G-1
G-28
G-30
G-65
G-1.5
dBm/Hz
dBm/Hz
dBm/Hz
dB
dB
dB
dB
dB
3
Electrical Characteristics for WCDMA Mode (Cont.)
low power modemid power mode,
Phase Discontinuity
at Pout=7dBm
20
30
deg
mid power modehigh power mode,
at Pout=17dBm
deg
Pout<28.5dBm, Pin<10dBm,
All phase
10:1
VSWR
Ruggedness
High Power Mode
Coupling factor
Daisy Chain Insertion Loss
RF Out to CPL port
ISO port to CPL port, Ven=Low
20
0.25
dB
dB
HSDPA Signal configuration used:
3GPP TS 34.121-1
Annex C (normative e): Measurement channels
C.10.1 UL reference measurement channel for HSDPA tests
Table C.10.1.4: values for transmitter characteristics tests with HS-DPCCH
Sub-test 2 (CM=1.0, MPR=0.0)
HSUPA signal configuration used:
3GPP TS 34.121-1
Annex C (normative): Measurement channels
C.11.1 UL reference measurement channel for E-DCH tests
Table C.11.1.3: values for transmitter characteristics tests with HS-DPCCH and E-DCH Sub-test 1 (CM=1.0, MPR=0.0)
At 3.2V operation, 0.5dB backoff is allowed for maximum power output.
Footprint
All dimensions are in millimeter
1.50
0.10
PIN Description
0.125
Pin #
1
Name
Description
Pin 1
Vcc1
RFin
Vbp
DC Supply Voltage
RF Input
2
3
Bypass Control
Mode Control
PA Enable
0.60
4
Vmode
Ven
5
6
CPL
Coupling port of Coupler
Ground
7
GND
ISO
0.35
0.35
8
Isolation port of Coupler
RF Out
9
RFOut
Vcc2
0.25
10
DC Supply Voltage
0.3
X-Ray Top View
0.10
4
Package Dimensions
All dimensions ae in millimeter
0.5
Pin 1 Mark
1
10
2
3
4
5
9
8
7
6
3
0.1
0.9 0.1
3
0.1
Marking Specification
Pin 1 Mark
Manufacturing Part Number
Lot Number
A5008
PYYWW
QAAAAA
P
Manufacturing Info
Manufacturing Year
Work Week
YY
WW
QAAAAA Assembly Lot Number
5
Metallization
PCB Design Guidelines
The recommended PCB land pattern is shown in figures
on the left side. The substrate is coated with solder mask
between the I/O and conductive paddle to protect the
gold pads from short circuit that is caused by solder
bleeding/bridging.
on 0.5mm pitch
Ø 0.3mm
0.45
0.30
0.60
Stencil Design Guidelines
A properly designed solder screen or stencil is required
to ensure optimum amount of solder paste is deposited
onto the PCB pads.
The recommended stencil layout is shown here. Reducing
the stencil opening can potentially generate more voids.
On the other hand, stencil openings larger than 100% will
lead to excessive solder paste smear or bridging across
the I/O pads or conductive paddle to adjacent I/O pads.
Considering the fact that solder paste thickness will
directly affect the quality of the solder joint, a good choice
is to use laser cut stencil composed of 0.100mm(4mils) or
0.127mm(5mils) thick stainless steel which is capable of
producing the required fine stencil outline.
0.35
0.55
0.475
connected to a inner layer
through a via hole for a
better isolation between
CPL_IN(ISO) and RFout
Solder Mask Opening
0.65
0.45
0.50
1.30
0.60
0.525
1.50
Solder Paste Stencil Aperture
0.55
0.45
0.35
1.10
0.60
0.475
1.10
6
Evaluation Board Schematic
Vcc1
Vcc2
1 Vcc1
2 RF In
3 Vbp
Vcc2 10
C5
2.2uF
C4
C6
680pF
C7
2.2uF
RF In
680pF
RF Out
RF Out 9
Isolation
Vbp
Vmode
Ven
ISO 8
C3
50ohm
100pF
4 Vmode
5 Ven
GND 7
C2
Coupler
100pF
CPL 6
C1
100pF
Evaluation Board Description
C5
C7
C4
C6
A5008
PYYWW
QAAAAA
C3
C1
C2
7
Tape and Reel Information
Dimension List
Annote
Millimeter
2.00 0.05
40.00 0.20
1.75 0.10
5.50 0.05
12.00 0.30
0.30 0.05
Annote
A0
Millimeter
3.40 0.10
3.40 0.10
1.35 0.10
1.55 0.05
1.60 0.10
4.00 0.10
8.00 0.10
P2
P10
E
B0
K0
F
D0
W
T
D1
P0
P1
Tape and Reel Format – 3 mm x 3 mm
8
Reel Drawing
BACK VIEW
Shading indicates
thru slots
18.4 max.
+0.4
-0.2
178
50 min.
25
min wide (ref)
Slot for carrier tape
insertion for attachment
to reel hub (2 places 180° apart)
+2.0
12.4
-0.0
FRONT VIEW
NOTES:
1. Reel shall be labeled with the following
information (as a minimum).
a. manufacturers name or symbol
b. Avago Technologies part number
c. purchase order number
d. date code
e. quantity of units
2. A certiꢀcate of compliance (c of c) shall
be issued and accompany each shipment
of product.
1.5 min.
3. Reel must not be made with or contain
ozone depleting materials.
13.0 0.2
21.0 0.8
4. All dimensions in millimeters (mm)
Plastic Reel Format (all dimensions are in millimeters)
9
Handling and Storage
ESD (Electrostatic Discharge)
various temperatures and relative humidity, and times.
After soak, the components are subjected to three con-
secutive simulated reflows.
Electrostatic discharge occurs naturally in the environ-
ment. With the increase in voltage potential, the outlet of
neutralization or discharge will be sought. If the acquired
discharge route is through a semiconductor device, de-
structive damage will result.
The out of bag exposure time maximum limits are deter-
mined by the classification test describe below which cor-
responds to a MSL classification level 6 to 1 according to
the JEDEC standard IPC/JEDEC J-STD-020B and J-STD-033.
ESD countermeasure methods should be developed and
used to control potential ESD damage during handling in
a factory environment at each manufacturing site.
ACPM-5008-TR1 is MSL3. Thus, according to the J-STD-033
p.11 the maximum Manufacturers Exposure Time (MET)
for this part is 168 hours. After this time period, the part
would need to be removed from the reel, de-taped and
then re-baked. MSL classification reflow temperature for
the ACPM-5008-TR1 is targeted at 260°C +0/-5°C. Figure
and table on next page show typical SMT profile for
maximum temperature of 260 +0/-5°C.
MSL (Moisture Sensitivity Level)
Plastic encapsulated surface mount package is sensitive to
damage induced by absorbed moisture and temperature.
Avago Technologies follows JEDEC Standard J-STD 020B.
Each component and package type is classified for
moisture sensitivity by soaking a known dry package at
Moisture Classification Level and Floor Life
MSL Level
Floor Life (out of bag) at factory ambient =< 30°C/60% RH or as stated
1
Unlimited at =< 30°C/85% RH
2
1 year
2a
3
4 weeks
168 hours
72 hours
48 hours
24 hours
4
5
5a
6
Mandatory bake before use. After bake, must be reflowed within the time limit specified on the label
Note :
1. The MSL Level is marked on the MSL Label on each shipping bag.
10
Reflow Profile Recommendations
tp
Tp
Critical Zone
TL to Tp
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25°C to Peak
Time
Typical SMT Reflow Profile for Maximum Temperature = 260 +0/-5°C
Typical SMT Reflow Profile for Maximum Temperature = 260 +0/-5°C
Profile Feature
Sn-Pb Solder
Pb-Free Solder
Average ramp-up rate (TL to TP)
3°C/sec max
3°C/sec max
Preheat
– Temperature Min (Tsmin)
– Temperature Max (Tsmax)
– Time (min to max) (ts)
100°C
150°C
60-120 sec
150°C
200°C
60-120 sec
Tsmax to TL
– Ramp-up Rate
3°C/sec max
Time maintained above:
– Temperature (TL)
– Time (TL)
183°C
60-150 sec
217°C
60-150 sec
Peak temperature (Tp)
240 +0/-5°C
10-30 sec
260 +0/-5°C
20-40 sec
Time within 5°C of actual Peak Temperature (tp)
Ramp-down Rate
6°C/sec max
6 min max.
6°C/sec max
8 min max.
Time 25°C to Peak Temperature
11
Storage Condition
Baking of Populated Boards
Packages described in this document must be stored Some SMD packages and board materials are not able to
in sealed moisture barrier, antistatic bags. Shelf life in a
sealed moisture barrier bag is 12 months at <40°C and
90% relative humidity (RH) J-STD-033 p.7.
withstand long duration bakes at 125°C. Examples of this
are some FR-4 materials, which cannot withstand a 24 hr
bake at 125°C. Batteries and electrolytic capacitors are
also temperature sensitive. With component and board
temperature restrictions in mind, choose a bake tem-
perature from Table 4-1 in J-STD 033; then determine the
appropriate bake duration based on the component to be
removed. For additional considerations see IPC-7711 and
IPC-7721.
Out-of-Bag Time Duration
After unpacking the device must be soldered to the PCB
within 168 hours as listed in the J-STD-020B p.11 with
factory conditions <30°C and 60% RH.
Baking
Derating due to Factory Environmental Conditions
It is not necessary to re-bake the part if both conditions
(storage conditions and out-of bag conditions) have been
satisfied. Baking must be done if at least one of the con-
ditions above have not been satisfied. The baking condi-
tions are 125°C for 12 hours J-STD-033 p.8.
Factory floor life exposures for SMD packages removed
from the dry bags will be a function of the ambient envi-
ronmental conditions. A safe, yet conservative, handling
approach is to expose the SMD packages only up to the
maximum time limits for each moisture sensitivity level
as shown in next table. This approach, however, does not
work if the factory humidity or temperature is greater
than the testing conditions of 30°C/60% RH. A solution
for addressing this problem is to derate the exposure
times based on the knowledge of moisture diffusion in
the component package materials ref. JESD22-A120).
Recommended equivalent total floor life exposures can
be estimated for a range of humidities and temperatures
based on the nominal plastic thickness for each device.
CAUTION
Tape and reel materials typically cannot be baked at the
temperature described above. If out-of-bag exposure
time is exceeded, parts must be baked for a longer time
at low temperatures, or the parts must be de-reeled,
de-taped, re-baked and then put back on tape and reel.
(See moisture sensitive warning label on each shipping
bag for information of baking).
Table on next page lists equivalent derated floor lives for
humidities ranging from 20-90% RH for three tempera-
ture, 20°C, 25°C, and 30°C.
Board Rework
Component Removal, Rework and Remount
If a component is to be removed from the board, it is
recommended that localized heating be used and the
maximum body temperatures of any surface mount
component on the board not exceed 200°C. This method
will minimize moisture related component damage. If any
component temperature exceeds 200°C, the board must
be baked dry per 4-2 prior to rework and/or component
removal. Component temperatures shall be measured at
the top center of the package body. Any SMD packages
that have not exceeded their floor life can be exposed to
a maximum body temperature as high as their specified
maximum reflow temperature.
Table on next page is applicable to SMDs molded
with novolac, biphenyl or multifunctional epoxy mold
compounds. The following assumptions were used in cal-
culating this table:
1. Activation Energy for diffusion = 0.35eV (smallest
known value).
2. For ≤60% RH, use Diffusivity = 0.121exp ( -0.35eV/kT)
mm2/s (this used smallest known Diffusivity @ 30°C).
3. For >60% RH, use Diffusivity = 1.320exp ( -0.35eV/kT)
mm2/s (this used largest known Diffusivity @ 30°C).
Removal for Failure Analysis
Not following the above requirements may cause
moisture/reflow damage that could hinder or com-
pletely prevent the determination of the original failure
mechanism.
12
Recommended Equivalent Total Floor Life (days) @ 20°C, 25°C & 30°C, 35°C
For ICs with Novolac, Biphenyl and Multifunctional Epoxies (Reflow at same temperature at which the component was
classified) Maximum Percent Relative Humidity
Maximum Percent Relative Humidity
Package Type and
Body Thickness
Body Thickness ≥3.1 mm
Including
Moisture
Sensitivity Level
Level 2a
5%
10% 20% 30% 40% 50% 60% 70% 80% 90%
∞
∞
∞
∞
∞
∞
∞
∞
94
44
32
41
53
69
26
33
42
57
16
28
36
47
7
5
4
35°C
30°C
25°C
20°C
124
167
231
60
10
14
19
7
10
13
6
PQFPs >84 pin,
PLCCs (square)
All MQFPs
78
8
103
10
Level 3
Level 4
Level 5
Level 5a
Level 2a
Level 3
Level 4
Level 5
Level 5a
Level 2a
Level 3
Level 4
Level 5
Level 5a
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
3
5
6
8
2
4
5
7
1
2
3
5
∞
∞
∞
∞
∞
∞
∞
∞
8
7
6
6
6
4
3
4
6
8
1
2
3
4
1
1
2
3
1
1
1
2
2
3
4
5
2
2
3
5
1
2
2
3
1
1
1
3
3
4
5
7
1
2
3
4
1
1
2
3
1
1
1
2
1
2
3
4
1
2
3
4
1
1
2
3
1
1
1
2
35°C
30°C
25°C
20°C
35°C
30°C
25°C
20°C
35°C
30°C
25°C
20°C
35°C
30°C
25°C
20°C
35°C
30°C
25°C
20°C
35°C
30°C
25°C
20°C
35°C
30°C
25°C
20°C
35°C
30°C
25°C
20°C
35°C
30°C
25°C
20°C
35°C
30°C
25°C
20°C
35°C
30°C
25°C
20°C
35°C
30°C
25°C
20°C
35°C
30°C
25°C
20°C
35°C
30°C
25°C
20°C
or
10
13
17
9
8
7
7
5
All BGAs ≥1 mm
11
14
3
4
5
7
2
3
4
6
1
1
2
3
10
13
2
4
5
7
2
2
4
5
1
1
2
3
58
86
148
∞
7
9
12
15
3
4
5
6
2
2
3
4
1
1
2
2
∞
∞
∞
∞
∞
∞
∞
∞
4
5
7
9
2
3
4
6
1
1
2
3
9
12
9
12
7
10
3
4
5
7
2
3
5
7
1
1
2
4
∞
∞
∞
∞
12
19
25
32
4
5
7
9
2
3
4
5
1
1
2
2
2
3
5
7
1
2
3
5
1
1
2
3
30
39
51
69
2
3
4
6
1
2
3
4
1
1
2
2
22
28
37
49
2
3
3
5
1
2
2
3
1
1
1
2
3
4
6
8
2
3
5
7
1
2
3
4
1
1
2
3
1
1
1
2
1
1
2
2
1
1
2
2
1
1
2
2
1
1
2
2
Body 2.1 mm
≤ Thickness
<3.1 mm including
PLCCs (rectangular)
18-32 pin
SOICs (wide body)
SOICs ≥20 pins,
PQFPs ≤80 pins
∞
∞
∞
∞
9
6
8
10
13
5
12
15
19
7
9
12
5
3
4
5
7
2
3
3
5
1
1
2
2
∞
∞
∞
∞
2
3
4
6
2
2
3
4
1
1
2
2
∞
∞
∞
∞
2
3
4
5
1
2
3
4
1
1
2
2
7
9
11
3
4
5
6
1
2
2
3
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
0.5
0.5
1
0.5
0.5
1
2
1
Body Thickness <2.1 mm
including
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
∞
17
28
∞
0.5
0.5
1
1
SOICs <18 pin
All TQFPs, TSOPs
or
1
1
∞
2
1
∞
∞
∞
∞
8
5
0.5
0.5
All BGAs <1 mm body
thickness
11
14
20
7
1
1
10
1
1
13
2
1
7
3
4
5
7
2
2
3
5
1
1
2
2
2
3
4
6
1
2
3
4
1
1
2
2
0.5
0.5
9
1
1
12
1
1
17
2
1
7
3
5
6
8
1
2
3
4
0.5
0.5
13
18
26
1
1
1
1
2
1
7
2
3
5
6
1
1
1
2
0.5
0.5
0.5
1
10
13
18
1
1
2
1
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved.
AV02-2480EN - August 5, 2011
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AVAGO
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