AMMC-6550 [BOARDCOM]
15 to 50 GHz Image Rejection Mixer;
| 型号： | AMMC-6550 |
| 厂家： | 
Broadcom Corporation. |
| 描述： | 15 to 50 GHz Image Rejection Mixer |
| 文件： | 总8页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AMMC-6550
15 to 50 GHz Image Rejection Mixer
Data Sheet
Chip Size: 1600 x 1300 m (63 x 51 mils)
Chip Size Tolerance: 10 m ( 0ꢀ. mils)
Chip Thickness: 100 10 m (. 0ꢀ. mils)
Pad Dimensions: 100 x 100 m (. x . 0ꢀ. mils)
Description
Features
Wide frequency range: 15 - 50 GHz
Low conversion loss: 10 dB (Typ.)
Image Rejection: 15 dB (Typ.)
High Input IP3: +20dBm
AMMC-6550 is an image rejection mixer (IRM), which
can also be used as an IQ mixer. The AMMC-6550 utilizes
two distributed passive FET mixers and a Lange coupler
realized in Avago Technologies unique 0.25m gate
length Enhancement mode PHEMT (E-PHEMT) technol-
ogy. Although the AMMC-6550 works as a resistive mixer, Positive polarity for Gate and Drain Bias
the mixer can be biased with a positive DC voltage (+0.4V
Typ.).
Schematic
AMMC-6550 is designed for use in commercial digital
radios and wireless LANs. The mixer requires an off-chip
90-degree hybrid to achieve signal image rejection and
RF
Vg
drain
+0.4V (Typ.) DC bias.
Applications
Microwave Radio systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
IF1
IF2
Broadband Wireless Access
(including 802.16 and 802.20 WiMax)
WLL and MMDS loops
LO
gate
Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure
that an ESD approved carrier is used when units are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices. The manufacturer as-
sumes no responsibilities for ESD damage due to improper storage and handling of these devices.
[1]
AMMC-6550 Maximum Ratings
Symbol
Vg
Parameters and Conditions
Units
V
Minimum
Maximum
+1.2
Gate Supply Voltage
-1.2
Pin
CW Input Power (IF and LO port)
Operating Channel Temperature
Storage Case Temperature
Max. Assembly Temp (60 sec. max)
dBm
°C
25
Tch
+150
+150
+300
Tstg
Tmax
°C
-65
°C
Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device.
[1]
AMMC-6550 DC Specifications/Physical Properties
Symbol
Vg
Parameters and Test Conditions
Units
V
Typical
+0.4
0
Gate Supply Operating Voltage
Ig
Gate Supply Current (under any RF power drive and temperature)
mA
Note: 1. Ambient operational temperature Ta=25°C unless otherwise noted.
AMMC-6550 Typical performances (T = 25°C, V =+0ꢀ. V, IF frequency=1GHz, Z =50 )
A
g
o
Symbol
FRF
Parameters and Test Conditions
RF Frequency Range
LO Frequency Range
IF Frequency Range
Lo port pumping power
RF to IF conversion gain
RF Port Return Loss
Units
GHz
GHz
GHz
dBm
dB
Typical
15 - 50
15 - 50
DC - 5
>10
-10
FLO
FIF
PLO
CG
RL_RF
RL_LO
RL_IF
IR
dB
-10
LO Port Return Loss
dB
-15
IF Port Return Loss
dB
-10
Image rejection ratio
LO to RF port Isolation
LO to IF port Isolation
RF to IF port Isolation
dB
15
LO-RF Iso.
LO-IF Iso.
RF-IF Iso.
IIP3
dB
20
dB
20
dB
15
Input IP3, Fdelta=100MHz, Prf=-10dBm, Plo=15dBm
Input port power at 1dB gin compression point, Plo=+15dBm
Noise Figure
dBm
dBm
dB
20
P-1
+10
10
NF
2
[2, 3, 6, 7]
AMMC-6550 RF Specifications
(T = 25°C, V =+0ꢀ.V, Plo=+10dBm, Z =50 )
A g o
LO=17GHz
LO=28GHz
LO=.0GHz
Parameters and
Symbol
CG
Test Conditions
Units
Minꢀ Typꢀ Maxꢀ Minꢀ Typꢀ Maxꢀ Minꢀ Typꢀ Maxꢀ
[4]
Conversion Gain
dB
dB
-11.5
-10
-14
-10.5 -9.5
-18.6
-12
-10.3
[5]
IR
Image Rejection Ratio
-12
-12
-17.5 -12
Notes:
2. Small/Large signal data measured in a fully de-embedded test fixture from Ta=25°C.
3. Specifications are derived from measurements in 50 test environment.
4. 100% on-wafer RF testing is done at RF frequency = 19, 30, and 42GHz; IF frequency = 1GHz.
5. 100% on-wafer RF testing is done at RF frequency = 15, 26, and 38GHz; IF frequency = 2GHz.
6. The external 90 degree hybrid coupler is from M/A-COM: PN 2032-6344-00. Frequency = 1.0-2.0GHz
7. All tested parameters guaranteed with measurement accuracy +/-1dB/dBm/dBc.
Typical distribution of conversion gain and image rejection ratio based on 5000 partsꢀ
StdDev=0ꢀ26
StdDev=0ꢀ2.
Conversion Gain LO=17GHz,RF=19GHz
StdDev=0ꢀ27
Conversion Gain LO=28GHz, RF=30GHz
StdDev=0ꢀ53
Conversion Gain LO=.0GHz, RF=.2GHz
StdDev=0ꢀ89
Image Rejection Ratio LO=17GHz, RF=15GHz
StdDev=1ꢀ15
Image Rejection Ratio LO=28GHz, RF=26GHz
Image Rejection Ratio LO=.0GHz, RF=38GHz
3
Biasing and Operation
The recommended DC bias condition for optimum
performance, and reliability is Vg=+0.4 volts. There is
approximately zero current consumption for the gate
biasing because the FET mixer was designed as the pas-
sive operation.
Vg
RF
IF1
IF2
Figure 1 is a simple block diagram, as reference for
Figure 2. Figure 2 is a schematic of the image-rejection
(SSB) mixer MMIC connected to an off-chip quadrature
hybrid.
Figures 3 through Figure 11 show typical down conver-
sion measurement results under the image rejection
operation. Data presented for the AMMC-6550 was
obtained using the circuit described here. Please note
that the image rejection and isolation performance
is dependent on the selection of the low frequency
quadrature hybrid. The performance specification of the
low frequency quadrature hybrid as well as the phase
balance and VSWR of the interface to the AMMC-6550
will affect the overall mixer performance.
LO
Figure 1ꢀ AMMC-6550 Schematic
No ground wires are needed since ground connections
are made with plated through-holes to the backside of
the device.
The AMMC-6550 is not recommended for up conversion
applications.
LSB
USB
RF
15-50GHz
IF
IF
LO
+0.4V
Vg
100pF
RF
IF1
LSB
USB
IF2
LO
LO
15-50GHz
+10dBm
Figure 2ꢀ AMMC-6550 Assembly diagram for SSB mixer applicationsꢀ 50 termination is required for the unwanted side-band termination
4
AMMC-6550 Typical performances (T = 25°C, V =+0ꢀ. V)
A
g
0
-5
0
-5
LSB
USB
USB
LSB
-10
-15
-20
-25
-30
-35
-10
-15
-20
-25
-30
-35
10
15
20
25
30
35
.0
.5
50
55
10
15
20
25
30
35
.0
.5
50
55
Frequency [GHz]
Frequency [GHz]
Figure 3ꢀ Typical conversion Gain, Plo=+10dBm, IF1=1GHz
Figure .ꢀ Typical conversion Gain, Plo=+10dBm, IF2=1GHz
15
20
15
10
5
P-1[dBm] @Plo=1.dBm
10
5
P-1[dBm] @Plo=10dBm
0
-5
CG[dB] @Plo=1.dBm
-10
CG[dB] @Plo=10dBm
-15
0
15
20
25
30
35
.0
.5
50
15
20
25
30
35
.0
.5
50
Frequency [GHz]
Frequency [GHz]
Figure 5ꢀ Typical RF port input power (@P-1), Plo=+10dBm, Fif=1GHz
Figure 6ꢀ Typical Noise Figure, Plo=10dBm, Fif=1GHz
0
-5
25
USB
20
IIP3[15dBm]
-10
-15
-20
-25
-30
-35
-.0
15
IIP3[10dBm]
10
LSB
5
0
15
20
25
30
35
.0
.5
50
-20
-15
-10
-5
0
5
10
15
20
Frf [GHz]
Plo [dBm]
Figure 8ꢀ Typical Conversion gain vsꢀ LO power, Prf=-20dBm, and
Flo=30GHz
Figure 7ꢀ Typical IP3, Fif=1GHz, Plo=10dBm and 15dBm
5
0
-5
0
-5
USB(13dBm)
USB(10dBm)
-10
-15
-20
-25
-30
-35
-10
-15
-20
-25
-30
LSB(10dBm)
LSB(13dBm)
15
20
25
30
35
.0
.5
50
0
0ꢀ2
0ꢀ.
0ꢀ6
0ꢀ8
1
1ꢀ2
Vgs[V]
Frf [GHz]
Figure 10ꢀ Typical RF port Return Loss vsꢀ Frequency, Plo=+10dBm
Figure 9ꢀ Typical Conversion gain vsꢀ Gate voltage, Flo=30GHz,
Plo=+10dBm and +13dBm
0
-5
0
-5
-10
-15
-20
-25
-30
-35
-10
-15
-20
-25
-30
-35
0
1
2
3
.
5
6
15
20
25
30
35
.0
.5
50
Flo [GHz]
IF Frequency [GHz]
Figure 12ꢀ Typical LO port return Loss vsꢀ Frequency, Plo=+10dBm,
Fif=1GHz
Figure 11ꢀ Typical IF port Return Loss vsꢀ IF frequency, Frf=35GHz, and
Plo=+10dBm
Figure 13ꢀ Bond pad location (um)
6
Assembly Techniques
The backside of the MMIC chip is RF ground. For mi-
crostrip applications the chip should be attached directly
duration of 76 8mS. A guided wedge at an ultrasonic
power level of 64dB can be used for the 0.7mil wire. The
recommended wire bonding stage temperature is 150
2C.
to the ground plane (e.g. circuit carrier or heatsink) using
[1,2]
electrically conductive epoxy
. For conductive epoxy,
the amount should be just enough to provide a thin fil-
let around the bottom perimeter of the die. The ground
plane should be free of any residue that may jeopardize
electrical or mechanical attachment. Caution should be
taken to not exceed the Absolute Maximum Rating for
assembly temperature and time.
The chip is 100ìm thick and should be handled with
care.
This MMIC has exposed air bridges on the top surface.
Handle at the edges or with a custom collet (do not pick
up die with vacuum on die center).
Thermo-sonic wedge bonding is the preferred method
for wire attachment to the bond pads. The RF connec-
tions should be kept as short as possible to minimize
inductance. Gold mesh or double-bonding with 0.7mil
gold wire is recommended. Mesh can be attached using a
2mil round tracking tool and a too force of approximately
22grams with an ultrasonic power of roughly 55dB for a
This MMIC is also static sensitive and ESD handling pre-
cautions should be taken.
Notes:
1. Ablebond 84-1 LM1 silver epoxy is recommended.
2. Eutectic attach is not recommended and may jeopardize reliability
of the device.
Vgs
100pF
Note:
1. Flares on thin film
substrate compensate
bonding wire inductance.
LO
RF
Figure 1.ꢀ Recommended die assembly
7
Ordering Information:
AMMC-6550-W10 = 10 devices per tray
AMMC-6550-W50 = 50 devices per tray
For product information and a complete list of distributors, please go to our web site:
wwwꢀavagotechꢀcom
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved. Obsoletes AV01-0394EN
AV02-1285EN - September 23, 2011
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