TIP106 [BOCA]
Power Darlingtons for Linear and Switching Applications; 达林顿功率线性和开关应用
| 型号： | TIP106 |
| 厂家： | 
BOCA SEMICONDUCTOR CORPORATION |
| 描述： | Power Darlingtons for Linear and Switching Applications |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TO-220 Plastic Package
Boca Semicondcutor Corp.
BSC
TIP100, TIP101, TIP102
TIP105, TIP106, TIP107
TIP100, 101, 102
NPN PLASTIC POWER TRANSISTORS
TIP105, 106, 107
PNP PLASTIC POWER TRANSISTORS
Power Darlingtons for Linear and Switching Applications
PIN CONFIGURATION
1. BASE
4
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
C
E
DIM
MIN.
MAX.
B
F
A
B
C
D
E
14.42
9.63
3.56
16.51
10.67
4.83
0.90
1.40
3.88
2.79
3.43
0.56
14.73
4.07
2.92
31.24
1.15
3.75
2.29
2.54
1
2
3
F
G
H
J
K
L
M
N
O
12.70
2.80
2.03
J
D
G
M
DEG 7
ABSOLUTE MAXIMUM RATINGS
100 101 102
105 106 107
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
V
V
max. 60
max. 60
max.
80 100
80 100
8.0
V
V
A
CBO
CEO
I
C
Total power dissipation up to T = 25°C
Junction temperature
P
T
j
max.
max.
80
150
W
°C
C
tot
Collector-emitter saturation voltage
I
C
= 3 A; I = 6 mA
V
CEsat
max.
2.0
V
B
D.C. current gain
I
C
= 3 A; V = 4 V
h
FE
min.
max.
1.0
20
K
K
CE
RATINGS (at T =25°C unless otherwise specified)
A
Limiting values
100 101 102
105 106 107
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
V
CBO
V
CEO
V
EBO
max. 60
max. 60
max.
80 100
80 100
5.0
V
V
V
http://www.bocasemi.com
page: 1
TIP100, TIP101, TIP102
TIP105, TIP106, TIP107
Collector current
Collector peak current
Base current
Total power dissipation up to T = 25°C
Derate above 25°C
I
max.
max.
max.
max.
max
max.
max
max.
8.0
15
1.0
80
0.64
2.0
0.016
150
A
A
A
W
W/ °C
W
W/ °C
°C
C
I
CM
I
B
P
C
tot
Total power dissipation up to T = 25°C
P
A
tot
Derate above 25°C
Junction temperature
Storage temperature
T
T
j
–65 to +150
°C
stg
THERMAL RESISTANCE
From junction to ambient
From junction to case
R
R
62.5
1.56
°
C/W
th j–a
th j–c
°C/W
CHARACTERISTICS
T
= 25°C unless otherwise specified
amb
100 101 102
105 106 107
Collector cutoff current
I
I
I
I
I
I
= 0; V
= 0; V
= 0; V
= 0; V
= 0; V
= 0; V
= 30 V
= 40 V
= 50 V
= 60V
= 80V
= 100V
I
CEO
max. 50
–
50
–
–
50
–
–
–
µA
µA
B
B
B
E
E
E
CE
CE
CE
CB
CB
CB
I
max.
max.
–
–
CEO
I
50 µA
–
–
CEO
I
max. 50
µA
µA
CBO
I
max.
max.
–
–
CBO
I
50 µA
CBO
Emitter cut-off current
I
= 0; V = 5 V
I
EBO
max.
8
mA
C
EB
Breakdown voltages
I
I
I
= 30 mA; I = 0
V
*
min. 60
min. 60
min.
80 100
80 100
5.0
V
V
V
C
C
E
B
CEO(sus)
CBO
= 1 mA; I = 0
V
V
E
= 1 mA; I = 0
C
EBO
Saturation voltages
I
I
= 3 A; I = 6 mA
V
CEsat
V
CEsat
*
*
max.
max.
2.0
2.5
V
V
C
C
B
= 8 A; I = 80 mA
B
Base-emitter on voltage
I
= 8 A; V
= 4 V
V
BE(on)
*
max.
2.8
V
C
CE
D.C. current gain
I
= 3 A; V
= 4 V
h
FE
*
*
min.
max.
1.0
20
K
K
C
CE
I
= 8 A; V
= 4 V
h
FE
min.
min.
200
4.0
C
CE
Small signal current gain
= 3A; V = 4V; f = 1.0 MHz
I
| h
|
C
CE
fe
Output capacitance f = 0.1 MHz
I
= 0; V
= 10V, PNP
C
o
max.
max.
300
200
pF
pF
E
CB
NPN
Forward voltage of commutation diode
= –I = 10A; I = 0
I
V *
F
max.
2.8
V
F
C
B
* Pulsed: pulse duration = 300 µs; duty cycle ≤ 2%.
http://www.bocasemi.com
page: 2
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