C850-100-WH [BOURNS]
Transient Blocking Units - TBU? Devices; 瞬时闭锁装置 - TBU ？设备
| 型号： | C850-100-WH |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Transient Blocking Units - TBU? Devices |
| 文件： | 总6页 (文件大小：643K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
Applications
■ Formerly
brand
■ Combo voice / xDSL linecards
■ Voice linecards
■ Extremely high speed performance
■ Blocks high voltages and currents
■ Very high bandwidth; GHz compatible
■ Small package, minimal PCB area
■ Simple, superior circuit protection
■ RoHS compliant*, UL Recognized
■ MDF, primary protection modules
■ Process control equipment
■ Test and measurement equipment
■ General electronics
TBU™ C650 and C850 Protectors
Transient Blocking Units - TBU™ Devices
Agency Approval
Bourns® C650 and C850 series products are high speed
bidirectional protection components, constructed using
MOSFET semiconductor technology, designed to protect
against faults caused by short circuits, AC power cross,
induction and lightning surges.
UL recognized component File # E315805.
Industry Standards
Description
Model
The TBU™ high speed protector, triggering as a function of
the MOSFET, blocks surges and provides an effective barrier
behind which sensitive electronics are not exposed to large
voltages or currents during surge events. The TBU™ device is
provided in a surface mount DFN package and meets industry
standard requirements such as RoHS and Pb Free solder
reflow profiles.
C650
C850
GR-1089
Port Type 1, 3, 5
Telcordia
ITU-T
C650
C850
GR-974
K.20, K.20E, K.21, K.21E, K.45
C850
Absolute Maximum Ratings (T
= 25 °C)
amb
Symbol
Parameter
Maximum protection voltage for impulse faults with rise time ≥ 1 µsec
Value
Unit
C650-xxx-WH
C850-xxx-WH
650
850
V
V
V
V
imp
C650-xxx-WH
C850-xxx-WH
300
425
Maximum protection voltage for continuous V
faults
rms
rms
T
T
Operating temperature range
Storage temperature range
-40 to +85
°C
°C
op
-65 to +150
stg
Electrical Characteristics (T
= 25 °C)
amb
Symbol
Parameter
Min.
Typ.
Max.
Unit
Cx50-100-WH
Cx50-180-WH
Cx50-260-WH
100
180
260
Maximum current through the device that will not cause
current blocking
I
I
I
mA
op
Cx50-100-WH
Cx50-180-WH
Cx50-260-WH
150
220
330
Typical current for the device to go from normal operating
state to protected state
mA
mA
trigger
out
Cx50-100-WH
Cx50-180-WH
Cx50-260-WH
200
360
520
Maximum current through the device
Series resistance of the TBU™ device
C650-100-WH
C650-180-WH
C650-260-WH
C850-100-WH
C850-180-WH
C850-260-WH
12
8
8
17
11
11
14.5
10
10
19
14
Ω
R
TBU
14
Maximum time for the device to go from normal operating
state to protected state
t
1
µs
mA
V
block
Current through the triggered TBU™ device with 50 Vdc circuit
voltage
I
1
quiescent
Voltage below which the triggered TBU™ device will transition to
normal operating state
V
14
reset
C650 and C850 TBU™ protectors are bidirectional; specifications are valid in both directions.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TBU™ C650 and C850 Protectors
Typical Performance Characteristics
Time to Block vs. Fault Current
V-I Characteristics
1
+I
0.1
0.01
I
trigger
0.001
0.0001
-V
reset
+V
0.00001
0.000001
0.0000001
V
reset
0.1
1
10
100
1000
Fault Current (A)
-I
trigger
Current vs. Temperature
140
120
100
80
60
40
20
-40
-20
0
20
40
60
80
Temperature (°C)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TBU™ C650 and C850 Protectors
Operational Characteristics
The graphs below demonstrate the operational characteristics of the TBU™ protector. For each graph the fault voltage, protected side
voltage, and current is presented.
V2
V1
TEST CONFIGURATION DIAGRAM
Load
C650 Lightning, 650 V
C850 Lightning, 850 V
3
3
2
1
2
1
1 µs/div.
Ch2 V2
1 µs/div.
Ch2 V2
Ch1 V1
Ch3 Current
Ch1 V1
Ch3 Current
C650 Power Fault, 300 Vrms, 100 A
C850 Power Fault, 425 Vrms, 100 A
3
3
2
2
1
1
4 ms/div.
4 ms/div.
Ch1 V1
Ch2 V2
Ch3 Current
Ch1 V1
Ch2 V2
Ch3 Current
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TBU™ C650 and C850 Protectors
Product Dimensions
K
Dim.
Min.
Typ.
Max.
K
J
J
3.90
(.154)
4.00
(.157)
4.10
(.161)
A
B
E
F
E
N
C
8.15
(.321)
0.80
(.031)
0.000
(.000)
2.55
(.100)
1.10
8.25
(.325)
0.85
(.033)
0.025
(.001)
2.60
(.102)
1.15
8.35
(.329)
0.90
(.035)
0.050
(.002)
2.65
(.104)
1.20
B
C
D
E
F
3
2
1
A
H
PIN 1
D
N
TOP VIEW
SIDE VIEW
BOTTOM VIEW
(.043)
(.045)
(.047)
3.45
(.136)
0.20
(.008)
0.65
(.026)
0.20
(.008)
3.50
(.138)
0.25
(.010)
0.70
(.028)
0.25
(.010)
3.55
(.140)
0.30
(.012)
0.75
(.030)
0.30
(.012)
H
J
Recommended Pad Layout
1.15
Pad Designation
(.045)
0.70
Pad #
Apply
In/Out
NC
(.028)
K
N
2.625
(.103)
1
2
3
MM
(INCHES)
In/Out
DIMENSIONS:
3.55
(.140)
NC = Solder to PCB; do not make electrical
connection, do not connect to ground.
TBU™ protectors have matte-tin termination finish. Suggested layout should use non-solder mask define (NSMD). Recommended stencil
thickness is 0.10-0.12 mm (.004-.005 in.) with stencil opening size 0.025 mm (.0010 in.) less than the device pad size. As when heat sinking
any power device, it is recommended that, wherever possible, extra PCB copper area is allowed. For minimum parasitic capacitance, do not
allow any signal, ground or power signals beneath any of the pads of the device.
Thermal Resistances
Symbol
Parameter
Value
Unit
R
th(j-a)
Junction to leads (package)
116
°C/W
Reflow Profile
Profile Feature
Pb-Free Assembly
Average Ramp-Up Rate (Tsmax to Tp)
3 °C/sec. max.
Preheat
- Temperature Min. (Tsmin)
- Temperature Max. (Tsmax)
- Time (tsmin to tsmax)
150 °C
200 °C
60-180 sec.
Time maintained above:
- Temperature (TL)
- Time (tL)
217 °C
60-150 sec.
Peak/Classification Temperature (Tp)
Time within 5 °C of Actual Peak Temp. (tp)
Ramp-Down Rate
260 °C
20-40 sec.
6 °C/sec. max.
8 min. max.
Time 25 °C to Peak Temperature
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TBU™ C650 and C850 Protectors
How to Order
Typical Part Marking
MANUFACTURER’S
TRADEMARK*
C 650 - 180 - WH
MARKING NUMBER
C65A = C650-100-WH
C65B = C650-180-WH
C65C = C650-260-WH
C85A = C850-100-WH
C85B = C850-180-WH
C85C = C850-260-WH
Form Factor
C = One TBU™ protector in the device
Impulse Voltage Rating
650 = 650 V
850 = 850 V
Iop Indicator
100 = 100 mA
180 = 180 mA
260 = 260 mA
PIN 1
MANUFACTURING
DATE CODE*
- 1ST DIGIT INDICATES THE YEAR’S 6-MONTH PERIOD.
- 2ND DIGIT INDICATES THE WEEK NUMBER IN THE 6-MONTH PERIOD.
- 3RD & 4TH DIGITS INDICATE SPECIFIC LOT FOR THE WEEK.
6-MONTH PERIOD CODES:
A = JAN-JUN 2009
B = JUL-DEC 2009
C = JAN-JUN 2010
D = JUL-DEC 2010
E = JAN-JUN 2011
F = JUL-DEC 2011
EXAMPLE: ARBC
- 1ST DIGIT ‘A’ = JAN-JUN 2009
- 2ND DIGIT ‘R’ = WEEK 18; WEEK OF APRIL 27
- 3RD & 4TH DIGITS ‘BC’ = LOT SPECIFIC INFORMATION
*TRANSITION FROM FULTEC TRADEMARK AND LOT CODE
TO BOURNS TRADEMARK AND DATE CODE IN 2009.
Packaging Specifications (per EIA468-B)
P
0
E
D
P
2
t
B
TOP
COVER
TAPE
A
N
F
W
C
D
B
0
K
0
CENTER
LINES OF
CAVITY
A
D
1
EMBOSSMENT
0
P
G (MEASURED AT HUB)
USER DIRECTION OF FEED
QUANTITY: 3000 PIECES PER REEL
A
B
C
D
G
Ref.
16.5
(.650)
N
Ref.
102
(4.016)
Device
Min.
326
Max.
330.25
Min.
1.5
(.059)
Max.
2.5
(.098)
Min.
12.8
(.504)
Max.
13.5
(.531)
Min.
20.2
(.795)
Max.
-
C650, C850
(12.835) (13.002)
A
K
B
D
D
E
t
F
0
0
1
Device
Min.
4.2
(.165)
Max.
4.4
(.173)
Min.
8.45
(.333)
Max.
8.65
(.341)
Min.
1.5
(.059)
Max.
1.6
(.063)
Min.
1.5
(.059)
Max.
-
Min.
1.65
(.065)
Max.
1.85
(.073)
Min.
7.4
(.291)
max.
7.6
(.299)
C650, C850
Device
P
P
P
W
0
0
2
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
1.1
(.043)
1.3
(.051)
7.9
(.311)
8.1
(.319)
3.9
(.159)
4.1
(.161)
1.9
(.075)
2.1
(.083)
0.25
(.010)
0.35
(.014)
15.7
(.618)
16.3
(.642)
C650, C850
MM
(INCHES)
DIMENSIONS:
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TBU™ C650 and C850 Protectors
Reference Application
The C-series devices are general use protectors used in a wide variety of applications. The following diagram is one common
configuration example of C-series device placement. A cost-effective protection solution combines Bourns® TBU™ protection
devices with a pair of MOVs or Bourns® GDTs. The figure below demonstrates the operational characteristics of the circuit.
V2
V1
Line
Line
OVP
OVP
TBU™ Device
TBU™ Device
Equip.
Common Configuration Diagram
3
2
1
1 ms/div.
Ch1 V1
Ch2 V2
Ch3 Current
C850 with G5200AS 4000 V Lightning 10/700 µsec, 150 A
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Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510
The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
REV. 03/10
COPYRIGHT©2008, BOURNS, INC. LITHO IN U.S.A. e 11/08 FU0801
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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