CD214A-B360LLF [BOURNS]

Schottky Barrier Rectifier Chip Diode; 肖特基势垒整流二极管芯片
CD214A-B360LLF
型号: CD214A-B360LLF
厂家: BOURNS ELECTRONIC SOLUTIONS    BOURNS ELECTRONIC SOLUTIONS
描述:

Schottky Barrier Rectifier Chip Diode
肖特基势垒整流二极管芯片

整流二极管
文件: 总5页 (文件大小:295K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Features  
Lead free versions available  
RoHS compliant (lead free version)*  
SMA package  
Surface mount  
High current capability  
CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly  
smaller electronic components.  
Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AC (SMA) size format, which offer PCB  
real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 3 A with a  
choice of repetitive peak reverse voltage of 20 V up to 60 V.  
Bourns® Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes  
roll away much more difficult.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
CD214A-  
Parameter  
Symbol  
Unit  
B320  
B330  
B340  
B340L  
B350  
B360  
Forward Voltage (Max.)  
V
F
0.5  
0.5  
0.5  
0.45  
0.7  
0.7  
V
(I = 3 A)  
f
Typical Junction  
Capacitance*  
C
T
250  
0.5  
250  
0.5  
250  
0.5  
300  
1.0  
250  
0.5  
250  
0.5  
pF  
mA  
Reverse Current (Max.)  
I
R
at Rated V )  
R
*
Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
Absolute Ratings (@ T = 25 °C Unless Otherwise Noted)  
A
CD214A-  
Parameter  
Symbol  
Unit  
B320  
B330  
B340  
B340L  
B350  
B360  
Repetitive Peak  
Reverse Voltage  
V
20  
30  
40  
40  
50  
60  
V
RRM  
Reverse Voltage  
V
20  
14  
30  
21  
40  
28  
40  
28  
50  
35  
60  
42  
V
V
A
R
Maximum RMS Voltage  
Avg. Forward Current  
V
RMS  
I
3
O
Forward Current,  
Surge Peak  
(60 Hz, 1 cycle)  
I
100  
10  
100  
10  
100  
10  
70  
20  
100  
10  
100  
10  
A
surge  
Typical Thermal  
Resistance**  
R
°C/W  
ΘJL  
Storage Temperature  
Junction Temperature  
T
-55 to +150  
-55 to +125  
°C  
°C  
STG  
T
J
** Thermal resistance junction to lead.  
How To Order  
CD 214A - B 3 30 L __  
Common Code  
Chip Diode  
Package  
• 214A = SMA/DO-214AC  
Reliable Electronic Solutions  
Model  
Asia-Pacific:  
B = Schottky Barrier Series  
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116  
Europe:  
Average Forward Current (I ) Code  
o
3
= 3 A (Code x 1000 mA = Average Forward Current)  
Reverse Voltage (V ) Code  
Tel: +41-41 768 5555 • Fax: +41-41 768 5510  
The Americas:  
R
30 = 30 V  
40 = 40 V  
60 = 60 V  
Tel: +1-951 781-5500 • Fax: +1-951 781-5700  
www.bourns.com  
Forward Voltage Suffix  
L = Low Forward Voltage V (CD214-B330L)  
f
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
Terminations  
LF = 100 % Sn (lead free)  
Blank = Sn/Pb  
CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode  
Product Dimensions  
Recommended Pad Layout  
A
A
B
C
B
C
G
Dimension  
SMA (DO-214AC)  
2.69  
A (Max.)  
(0.106)  
F
D
H
2.10  
(0.083)  
1.27  
E
B (Min.)  
C (Min.)  
(0.050)  
Dimension  
SMA (DO-214AC)  
4.06 - 4.57  
A
(0.160 - 0.180)  
2.29 - 2.92  
(0.090 - 0.115)  
1.27 - 1.63  
(0.050 - 0.064)  
0.15 - 0.31  
(0.006 - 0.110)  
4.83 - 5.59  
(0.190 - 0.220)  
0.05 - 0.20  
(0.002 - 0.008)  
2.01 - 2.62  
(0.080 - 0.103)  
0.76 - 1.52  
MM  
DIMENSIONS:  
(INCHES)  
B
C
D
E
Physical Specifications  
Case ............................................................................Molded plastic  
Polarity ....................................................Indicated by cathode band  
Weight ....................................................0.002 ounces / 0.064 grams  
F
G
H
Typical Part Marking  
(0.030 - 0.060)  
CD214A-B320 ......................................................................  
CD214A-B330 ......................................................................  
CD214A-B340 ......................................................................  
CD214A-B340L ....................................................................  
CD214A-B350 ......................................................................  
CD214A-B360 ......................................................................  
320  
330  
340  
340L  
350  
360  
MM  
(INCHES)  
DIMENSIONS:  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode  
Rating and Characteristic Curves: CD214A-B320, CD214A-B330, CD214A-B340, CD214A-B350 & CD214A-B360  
Reverse Characteristics  
Forward Characteristics  
10  
100  
10  
1
B320 to B340  
Tj=125 °C  
Tj=100 °C  
B350 to B360  
1
0.1  
0.01  
0.1  
Tj=25 °C  
Tj=25 °C  
60  
PULSEWIDTH 300µs  
0.01  
0.001  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0
20  
40  
80  
100  
120  
140  
Forward Voltage (Volts)  
Percent of Rated Peak Reverse Voltage (%)  
Capacitance Between Terminals  
Derating Curve  
3.50  
1000  
F = 1 MHz  
Ta = 25 °C  
900  
800  
700  
600  
3.00  
2.50  
2.00  
500  
400  
1.50  
1.00  
300  
200  
100  
0
0.50  
Single Phase Half Wave 60 Hz  
Resistive or Inductive Load  
0.00  
25  
0
20  
40  
60  
80  
100  
50  
75  
100  
125  
150  
Reverse Voltage (Volts)  
Lead Temperature (°C)  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode  
Rating and Characteristic Curves: CD214A-B340L  
Reverse Characteristics  
Forward Characteristics  
10  
1000  
100  
Tj=125 °C  
Tj=100 °C  
10  
1
1
Tj=25 °C  
Tj=25 °C  
0.1  
Tj=125 °C  
PULSEWIDTH 300µs  
Tj=100 °C  
0.01  
0.1  
0
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55  
55  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
Forward Voltage (Volts)  
Rated Peak Reverse Voltage (V)  
Capacitance Between Terminals  
Derating Curve  
3.50  
1000  
900  
800  
700  
600  
500  
F = 1 MHz  
Ta = 25 °C  
3.00  
2.50  
2.00  
1.50  
1.00  
400  
300  
200  
100  
0
0.50  
Single Phase Half Wave 60 Hz  
Resistive or Inductive Load  
0.00  
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100  
Lead Temperature (°C)  
Reverse Voltage (Volts)  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode  
Packaging Information  
The product will be dispensed in Tape and Reel format (see diagram below).  
P
0
P
T
E
1
d
Index Hole  
120 °  
F
D
2
W
B
D
D
1
P
A
C
Trailer  
Device  
Leader  
W
....... .......  
....... .......  
1
End  
Start  
.......  
....... ....... .......  
MM  
(INCHES)  
DIMENSIONS:  
10 pitches (min.)  
10 pitches (min.)  
Devices are packed in accordance with EIA standard  
RS-481-A and specifications shown here.  
Direction of Feed  
Item  
Symbol  
SMA (DO-214AC)  
2.90 0.10  
(0.114 - 0.004)  
5.59 0.10  
(0.220 - 0.004)  
2.36 0.10  
(0.093 - 0.004)  
1.55 0.05  
(0.061 - 0.002)  
330  
Carrier Width  
A
B
C
d
Carrier Length  
Carrier Depth  
Sprocket Hole  
Reel Outside Diameter  
Reel Inner Diameter  
Feed Hole Diameter  
Sprocket Hole Position  
Punch Hole Position  
Punch Hole Pitch  
Sprocket Hole Pitch  
Embossment Center  
Overall Tape Thickness  
Tape Width  
D
(12.992)  
50.0  
(1.969)  
D
MIN.  
1
2
13.0 0.20  
(0.512 - 0.008)  
1.75 0.10  
(0.069 - 0.004))  
5.50 0.05  
(0.217 - 0.002)  
4.00 0.10  
(0.157 - 0.004)  
4.00 0.10  
(0.157 - 0.004)  
2.00 0.05  
(0.079 - 0.002)  
0.30 0.10  
(0.012 - 0.004)  
12.00 0.20  
(0.472 - 0.008)  
D
E
F
P
P
0
P
1
T
W
18.4  
Reel Width  
W
MAX.  
(0.724)  
1
Quantity per Reel  
--  
5,000  
REV. 02/05  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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