FDDS100H06-F085 [BOURNS]
Smart High Side Switch; 智能高边开关
| 型号： | FDDS100H06-F085 |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Smart High Side Switch |
| 文件： | 总16页 (文件大小：407K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2011
FDDS100H06_F085
Smart High Side Switch
Features
Description
•
•
•
•
•
•
Short circuit protection
N channel power FET with charge pump, ground referenced
CMOS compatible input and diagnostic output with integrated
protective functions.
Current limitation
Thermal shutdown with restart.
Overvoltage protection(including load dump)
Very low standby current
TO252-5L
3
Under voltage and over voltage shutdown with auto-restart
and hysteresis.
1
•
•
•
•
•
•
•
Fast demagnetization of inductive loads
Open load detection in ON-state
CMOS compatible input
5
ESD protection
Optimized static electromagnetic compatibility
Open drain fault output
Qualified to AEC Q100
Typical Applications
•
•
•
Power switch with diagnostic feedback for DC ground loads
All types of resistive, inductive, and capacitive loads
Replace electromechanical relays, fuses and discrete circuits
Ordering Information
Operating
Temp.
Device
Package
FDDS100H06_F085 TO252- 5L
-40 C ~ 150 C
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
1
www.fairchildsemi.com
Block Diagrams
VBB
3
Charge
Pump
Voltage
Source
Output
Clamp&Gate
Protection
Battery
Voltage
Sensor
Gate Driver
SenseFET
Undervoltage
&
Overvoltage
Load-
Current
Limiter
Load-
Current
Sensor
OUT
5
Temperature
Sensor
IN
ESD
&
Overvoltage
Protection
2
ST
Control Logic
4
Output
Voltage
Detection
GND
1
Pin Definitions
Pin Number
Pin Name
I/O
P
Pin Function Description
1
2
3
4
5
GND
IN
Ground
A
Input, activates the power switch in case of logic high
Supply voltage; Pin3 and TAB are internally shorted
Fault signal feedback; low on failure
Output to loads
Vbb
ST
P
A
OUT
A
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
2
www.fairchildsemi.com
Absolute Maximum Ratings
At Tj=25C unless otherwise specified.
Parameter
Symbol
Vbb
Values
Unit
1)
Supply voltage
37
34
60
V
V
V
Supply voltage for full short circuit protection
Vbb
2)
Load dump protection VLoadDump = UA + VS, UA=13.5V
VLoadDump
RI=2, RL=12, td=400ms, IN=Low o r High
Load current (Short-circuit current) 3)
IL
Self-limited
V
Operating temperature range
Storage temperature range
Tj
Tstg
-40 ~ 150
-55 ~ 150
C
C
Power Dissipation(DC) TC ≤25 °C
Inductive load switch-off energy dissipation 4)
Ptot
41.6
W
J
EAS
0.425
Single pulse, IL= 2.67A, L=100mH, Vbb=12V, Tj=150C
HBM (Human Body Model)
CDM (Charged Device Model)
Electrostatic discharge capability
(ESD)
VESD
4
KV
KV
V
2
Input Voltage (DC)
VIN
-0.5 .... + 5.4
Current through input pin(DC)
Current through status pin(DC)
IIN
IST
+/-2
+/-5
mA
Note:
1) See also on page 04.
2) VLoad dump is setup without the DUT connected to the generator.
3) See also diagram on page 05.
4) not subject to production test, specified by design. See also on page 10.
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
3
www.fairchildsemi.com
Electrical Characteristics
At Tj=25C, Vbb=12V unless otherwise specified.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Theramal Characteristics
Thermal resistance
RthJC
RthJA
(junction to case)
Mini. footprint (junction to ambient)
1 Inch^2 device on PCB 1)
-
-
-
-
99
35
3
K/W
45
Load Switching Capability and Characteristics
On-state resistance(Pin3 to pin 5)
RON
VIN=5V, Vbb=12V, IL=2.5A Tj=25C
VIN=5V, Vbb=12V, IL=2.5A Tj=150C
-
80
160
100
200
m
Nominal load current( tab to pin5)
IL(NOM)
SMD1) VON<= 0.5V, Ta=85C, Tj<=150C
2.8
3.0
-
A
Turn-on time ( to 90% VOUT)
Turn-off time ( to 10% VOUT)
ton
toff
RL=12Tj = -40~ 150C
RL=12Tj = -40~ 150C
24
10
70
66
170
170
us
Slew rate on (10% to 30% VOUT)
Slew rate off (70% to 40% VOUT)
dV / dton
-dV / dtoff
RL=12Tj = -40~ 150C
RL=12Tj = -40~ 150C
0.2
0.2
0.8
0.8
1.5
3
V/us
V/us
Operating Parameters
Operating Voltage
Vbb(ON)
Vbb(SD)
Vbb(RE)
Vbb(HYS)
Vbb(u)
Tj = -40~ 150C
Tj = -40~ 150C
5.5
38
37.5
-
-
43.5
-
37
48
-
V
V
Over voltage shutdown
Over voltage restart
Tj = -40~ 150C
V
Over voltage hysteresis
Tj = -40~ 150C
0.5
3.5
4.2
5
-
V
2)
Under voltage shutdown
Tj = -40~ 150C
2.5
-
-
V
Under voltage restart
Vbb(u rst)
Vbb(ucp)
Vbb(AZ)
Ibb(off)
Tj = -40~ 150C
5.2
5.5
62
15
15
2.0
V
Under voltage restart of charge pump
Overvoltage protection 3)
Standby current
Tj = -40~ 150C
V
Ibb=40mA, Tj=-40 ~ 150C
VIN=0, Tj = -40~ 150C
VIN=0, Tj = -40~ 150C
VIN=5V, Tj = -40~ 150C
49
-
54
4.8
-
V
uA
uA
mA
Leakage output current
IL(off)
-
4)
Operating current
Ibb(GND)
-
0.5
Note:
1) Device on76.2mm * 114mm * 1.57mm glass epoxyPCB FR4 with 1inch^2(one layer 70um) copper area. still air condition.
2) Refer to page 13.Should reset IN to restart in case battery voltage comes back to normal operating range after undervoltage shutdown.
3) See also VON(CL) in tabel of protection functions and circuit diagram on page 14.
4) Add IST, if IST>0, and add IIN, if VIN > 5.5V
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
4
www.fairchildsemi.com
Electrical Characteristics
At Tj=25C, Vbb=12V unless otherwise specified
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Protection Functions 1)
Short circuit current limit (pin3 to pin 5)
VON > VON(SC)
IL(SCP)
Tj=-40C
Tj=25C
Tj=150C
9
7
4
15
12
7
24
19
10
A
Short Circuit detection voltage
VON(SC)
td(SC)
-
4
-
V
Short Circuit shutdown delay time
Tj=-40C ~ 150C
80
250
530
us
Minimum Input low time : 60us
Output clamp(inductive load switch off) VON(CL)
at VOUT= Vbb-VON(CL)(overvoltage) 2)
IL=40mA
Tj=-40C ~ 150C
50
56.5
63
V
Thermal overload trip temperature
Thermal hysteresis
Reverse battery voltage 3)
Tjt
150
170
10
-
-
-
C
K
Tjt
-Vbb
VIN =5V
-
-
32
V
Diagnostic Characteristics
Open load detection current
Input & Status Feedback 4)
Input Resistance
IL(OL)
VIN =5V,Tj=-40 ~ 150C
12
-
480
mA
RI
Tj=-40 ~ 150C
Tj=-40 ~ 150C
2.4
-
3.0
2.2
-
3.6
2.9
-
K
V
Input turn-on threshold voltage
Input turn-off threshold voltage
Off state input current
VINH
VINL
Tj=-40 ~ 150C
1.2
-
V
IIN(OFF)
IIN(ON)
td(ST)
VIN=0V, Tj=-40 ~ 150C
VIN=3.5V, Tj=-40 ~ 150C
Tj=-40 ~ 150C
-
1
uA
uA
us
us
On state input current
20
-
45
380
30
70
750
90
Initial open load delay time
Delay time for status with open load td(ON_OL)
while ON 5)
Normal --> Open load, Tj=-40 ~ 150C
10
Delay time for status with open load td(ON_Nor)
while ON
Open load --> Normal, Tj=-40 ~ 150C
10
30
90
us
Status output(open drain) for high level
Status output(open drain) for low level
VSTH
VSTL
IST=1.6mA, Tj=-40 ~ 150C
IST=1.6mA, Tj=-40 ~ 150C
5.4
6.3
-
V
V
0.6
notes:
1) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal
operating range. Protection functions are not designed for continuous repetitive operation.
2) See the page12
3) Requoired 150 resistor in GND PIN. Note that the power dissipation is higher compared to normal operation condition due to the voltage drop across the intrinsic drain-
source diode. The temperature protection is not active during reversrse current operation. IN and ST currents have to be limitted by max rating.
4) If a ground resistor RGND is used, add the voltage drop across this resistor.
5) Guaranteed by design.
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
5
www.fairchildsemi.com
Application Information
1. Truth Table
Sense current under fault conditions
Normal operation
Input Level
Output Level
Status
L
H
L
H
H
H
X1)
Open load
L
H
H
L
H
2)
Short circuit to Vbb
Short circuit to GND
Overtemperature
Undervoltage
L
H
H
H
L
H (L 3)
)
)
L
H
L
L
H
L 4)
L
L
L
H
L
L
L
H
L
L
H
H (L 5)
Overvoltage shutdown
L
H
L
L
H
H
L = “ LOW “ Level, Z = High impedance, potential depends on external circuit, H = “HIGH” Level
Notes:
1) Power TR off, high impedance.
2) An short of output to Vbb ,in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occure and VSTL
signal may be errorious.
3) Low resistance to Vbb may be detected in ON-state by the no-load-detection.
4) Latched and reset by input. Low resistance to Vbb may be detected in ON-state by the no-load-detection.
5) Should reset IN to restart in case battery voltage comes back to normal operating range after undervoltage shutdown and status = “Low” level.
2.Terms
Ibb
IIN
Vbb
IN
IL
OUT
IST
ST
GND
IGND
RGND
Notes:
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
6
www.fairchildsemi.com
3. Detailed Function Blocks
3.1 Input circuit (ESD protection)
RI
IN
VZI1
VZI2
GND
VZI1 = 16V (typ.), VZI2 = 6.1V (typ.). RI=3K.
3.2 Status output
5V
IST
S T
D Z,ST
G N D
VDZ,ST = 6.1V (typ.), Max 5mA. with IST =1.6mA. Low level of ST is 0.6(Max).
3.3 Inductive and overvoltage output clamp
Vbb
VZ1
OUT
VON is clamped to VON(CL)=59V(Typ).
3.4 Overvoltage and reverse battery protection
VBB
VBB
RIN
RIN
RI
RI
IN
ST
IN
Logic
Logic
ST
Vbb(AZ)
Vbb(AZ)
RST
RST
VZI1
VZI2
VZI1
VZI2
DZ,ST
DZ,ST
GND
GND
Schottky
Diode
RGND
VDZ,ST =6.1V(Typ), VZI1 = 16V (typ.), VZI2 = 6.1V(Typ). RGND = 150 typ.Vbb(AZ) = 54V(typ).
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
7
www.fairchildsemi.com
3. 5 Open load detection.
Vbb
Detection
Logic
OUT
Open load is detected when IN=H and VON < Ron * IL(OL).
3. 6 Short circuit detection.
Vbb
Detection
Logic
OUT
Short circuit is detected when VON > 4V.(Typ) and t > t(dSC), typically 250us.
3.7 Vbb disconnect with energized inductive load and GND disconnect
IIN
Vbb
IN
Vbb
GND
IN
OUT
IST
ST
OUT
GND
ST
Schottky
Diode
Nominal load current can be handled by the device itself.
3.8 Inductive load switch-off energy dissipation
EAS
ELoad
Vbb
GND
IN
iL(t)
Vbb
OUT
ST
=
EL
ER
L
ZL
{
RL
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
8
www.fairchildsemi.com
Energy stored in load inductance:
2
EL = 1 2 L IL
While demagnetizing load inductance, the energy dissipated in MOSFET is
EAS = Ebb + EL – ER
=
V
ONCL iLtdt
with an approximate solution for RL > 0 :
IL L
--------------
IL RL
-----------------------------
EAS
=
VONCLln 1 +
2 RL
VOUTCL
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
9
www.fairchildsemi.com
3.9 Maximum allowable load inductance for a single switch off
L=f(IL); Tj,start = 150C, Vbb=12V, RL = 0
1000
L[m H ]
100
10
1
0.1
0.01
I_L[A ]
1
10
100
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
10
www.fairchildsemi.com
Typical Application Circuit
Ibb
6.8K
10K
BAT
Vbb
ST
IN
5.1
OUT
IL
Zener
2K
5V
GND
2K
IGND
MCU
Diag
M
RGND
150Ω
Ibb
6.8K
10K
BAT
Vbb
ST
IN
OUT
IL
5.1
Zener
2K
GND
2K
IGND
M
RGND
150Ω
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
11
www.fairchildsemi.com
Timing Diagram
IN
IIN
t
t
t
t
td(bbIN)
ST
ST
VOUT
VOUT
t
t
IL
VBB
t
t
Figure 2a. Switching motors and lamps
Figure 1. Vbb turn-onSwitching a lamp
IN
IN
t
t
td(ST)
ST
ST
VOUT
VO UT
VON(CL)
td(SC )
t
IL
IL
iL(OL)
t
Figure 2b. Switching an inductive load
Figure 3. Turn-on into short circuit
In case of VON > VON(SC)(typ.4V) the device will
be switched off by internal short circuit detection
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
12
www.fairchildsemi.com
IN
IN
td(ST)
ST
ST
td(ON_OL)
VOUT
td(ON_Nor)
VOUT
IL
IL
Normal
Open
Normal
Figure 4a. Open load detection while being open
Figure 4b. Open load detection while turning-on
IN
IN
ST
ST
VOUT
VOUT
VbIN(u cp)
Vb(u rst)
Vbb(u)
Vbb(u)
Vbb
Vbb
Vb(u rst)
Figure 5b. Undervoltage restart of charge pump
Figure 5a. Undervoltage
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
13
www.fairchildsemi.com
IN
IN
ST
ST
VOUT
VOUT
Vbb
Tj
VON(CL)
Vbb(SD)
Vbb(RE)
Figure 6. Overvoltage
Figure 7. Over temperature
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
14
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDDS100H06_F085 Rev. 1.0.0
15
www.fairchildsemi.com
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