TICP107DR [BOURNS]
Silicon Controlled Rectifier;
| 型号： | TICP107DR |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Silicon Controlled Rectifier |
| 文件： | 总2页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
LP PACKAGE
(TOP VIEW)
●
●
●
●
●
●
●
1 A Continuous On-State Current
15 A Surge-Current
G
1
2
3
Glass Passivated Wafer
A
K
400 V to 600 V Off-State Voltage
MDC1AA
I
50 µA min, 200 µA max
GT
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
di/dt 100A/µs
Package Options
G
A
K
PACKAGE
LP
PACKING
Bulk
PART # SUFFIX
1
2
3
(None)
R
LP with fomed leads
Tape and Reel
MDC1AB
absolute maximum ratings over operating junction temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TICP107D
TICP107M
TICP107D
TICP107M
400
Repetitive peak off-state voltage (see Note 1)
VDRM
V
600
400
Repetitive peak reverse voltage
VRRM
V
600
Continuous on-state current at (or below) 25°C ambient temperature (see Note 2)
Surge on-state current at (or below) 25°C ambient temperature (see Note 3)
Critical rate of rise of on-state current at 110°C (see Note 4)
Peak positive gate current (pulse width ≤ 300 µs)
Junction temperature range
IT(RMS)
ITSM
di/dt
IGM
1
15
A
A
100
A/µs
A
0.2
TJ
-40 to +110
-40 to +125
230
°C
°C
°C
Storage temperature range
Tstg
TL
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ.
2. These values apply for continuous dc operation with resistive load.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. Rate of rise of on-state current after triggering with IG = 10mA, diG/dt = 1A/µs.
JANUARY 1999 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25°C ambient temperature (unless otherwise noted )
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Repetitive peak
off-state current
Repetitive peak
reverse current
IDRM
IRRM
VD = rated VDRM
VR = rated VRRM
RGK = 1 kΩ
20
µA
IG = 0
200
µA
IGT
VGT
IH
Gate trigger current
Gate trigger voltage
Holding current
On-state voltage
VAA = 12 V
VAA = 12 V
VAA = 12 V
IT = 2 A
RL = 100 Ω
RL = 100 Ω
tp(g) ≥ 20 µs
tp(g) ≥ 20 µs
Initiating IT = 10 mA
50
200
1
µA
V
0.4
2
mA
V
VT
(see Note 5)
1.4
NOTE 5: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
JANUARY 1999 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
2
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