TICP206MLPR [BOURNS]
4 Quadrant Logic Level TRIAC, 600V V(DRM), 1.5A I(T)RMS, PLASTIC, TO-92, 3 PIN;
| 型号： | TICP206MLPR |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | 4 Quadrant Logic Level TRIAC, 600V V(DRM), 1.5A I(T)RMS, PLASTIC, TO-92, 3 PIN 三端双向交流开关 触发装置 |
| 文件： | 总3页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TICP206 SERIES
SILICON TRIACS
●
●
●
●
●
1.5 A RMS
LP PACKAGE
(TOP VIEW)
Glass Passivated Wafer
400 V to 600 V Off-State Voltage
G
MT2
MT1
1
2
3
Max I of 10 mA
GT
Package Options
MDC2AA
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
PACKAGE
LP
PACKING
Bulk
PART # SUFFIX
(None)
R
LP with fomed leads
Tape and Reel
G
1
2
3
MT2
MT1
MDC2AB
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
SYMBOL
VALUE
UNIT
TICP206D
TICP206M
400
VDRM
V
600
IT(RMS)
ITSM
ITSM
IGM
1.5
10
A
A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak on-state surge current half-sine-wave at (or below) 25°C case temperature (see Note 4)
Peak gate current
12
A
0.2
A
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
PG(AV)
TC
0.3
W
°C
°C
°C
-40 to +110
-40 to +125
230
Storage temperature range
Tstg
Lead temperature 1.6 mm from case for 10 seconds
TL
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 60 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when thedevice is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Repetitive peak off-
state current
IDRM
VD = rated VDRM
IG = 0
20
µA
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
Vsupply = +12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
8
Gate trigger
current
-8
IGT
mA
V
-8
10
2.5
-2.5
-2.5
2.5
Gate trigger
voltage
Vsupply = +12 V†
VGT
Vsupply = -12 V†
Vsupply = -12 V†
† All voltages are with respect to Main Terminal 1.
MARCH 1988 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TICP206 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VT
IH
On-state voltage
IT
=
1 A
IG = 50 mA
IG = 0
(see Note 6)
2.2
30
V
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Init’ ITM = 100 mA
Init’ ITM = -100 mA
Holding current
Latching current
mA
mA
IG = 0
-30
40
IL
(see Note 7)
-40
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
GATE TRIGGER VOLTAGE
vs
TEMPERATURE
TEMPERATURE
TC05AB
TC05AA
100
10
1
10
VAA
RL = 10 Ω
=
12 V
Vsupply IGTM
Vsupply IGTM
VAA
=
12 V
+
+
-
+
-
-
RL = 10 Ω
+
+
-
+
-
-
tw(g) = 20 µs
t
w(g) = 20 µs
-
+
-
+
1
0·1
0·1
-60 -40 -20
0
20
40
60
80 100 120
-60 -40 -20
0
20
40
60
80 100 120
TC - Case Temperature - °C
TC - Case Temperature - °C
Figure 1.
Figure 2.
MARCH 1988 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
2
TICP206 SERIES
SILICON TRIACS
TYPICAL CHARACTERISTICS
HOLDING CURRENT
LATCHING CURRENT
vs
vs
CASE TEMPERATURE
CASE TEMPERATURE
TC05AD
TC05AE
10
100
10
1
VAA
=
12 V
Vsupply IGTM
VAA
IG = 0
Initiating ITM = 100 mA
=
12 V
+
+
-
+
-
-
-
+
1
Vsupply
+
-
0·1
0
-60 -40 -20
0
20
40
60
80 100 120
-60 -40 -20
0
20
40
60
80 100 120
TC - Case Temperature - °C
TC - Case Temperature - °C
Figure 3.
Figure 4.
MARCH 1988 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
相关型号：
TICP206MR
4 Quadrant Logic Level TRIAC, 600V V(DRM), 1.5A I(T)RMS, PLASTIC, LP003, TO-92, 3 PIN
BOURNS
TICP206MR-S
4 Quadrant Logic Level TRIAC, 600V V(DRM), 1.5A I(T)RMS, PLASTIC, LP003, TO-92, 3 PIN
BOURNS
©2020 ICPDF网 联系我们和版权申明