TIP31D [BOURNS]
NPN SILICON POWER TRANSISTORS; NPN硅功率晶体管
| 型号： | TIP31D |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | NPN SILICON POWER TRANSISTORS |
| 文件： | 总6页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
●
●
●
●
40 W at 25°C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
TO-220 PACKAGE
(TOP VIEW)
1
2
3
B
C
E
Customer-Specified Selections Available
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TIP31D
TIP31E
TIP31F
TIP31D
TIP31E
TIP31F
160
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
VCBO
180
V
200
120
VCEO
140
V
160
Emitter-base voltage
VEBO
IC
ICM
IB
5
V
A
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
3
5
A
1
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Ptot
Ptot
40
W
W
mJ
°C
°C
°C
2
2
½LIC
32
Operating junction temperature range
Tj
Tstg
TL
-65 to +150
-65 to +150
250
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for tp £ 0.3 ms, duty cycle £ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 W,
VBE(off) = 0, RS = 0.1 W, VCC = 20 V.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TIP31D
TIP31E
TIP31F
TIP31D
TIP31E
TIP31F
120
140
160
Collector-emitter
V(BR)CEO
IC
(see Note 5)
CE = 160 V
=
30 mA
IB = 0
V
breakdown voltage
V
V
BE = 0
0.2
0.2
0.2
Collector-emitter
cut-off current
ICES
VCE = 180 V
VCE = 200 V
VBE = 0
VBE = 0
mA
Collector cut-off
current
ICEO
IEBO
hFE
VCE
VEB
=
=
90 V
5 V
IB = 0
IC = 0
0.3
1
mA
mA
Emitter cut-off
current
Forward current
transfer ratio
VCE
VCE
=
=
4 V
4 V
IC
IC
=
=
1 A
3 A
25
5
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
Collector-emitter
saturation voltage
Base-emitter
VCE(sat)
VBE
IB = 750 mA
IC
IC
=
=
3 A
3 A
2.5
1.8
V
V
VCE
VCE
VCE
=
=
=
4 V
10 V
10 V
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
hfe
IC = 0.5 A
IC = 0.5 A
20
3
|hfe|
f = 1 MHz
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
MIN
TYP
MAX
UNIT
RqJC
RqJA
3.125
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
†
PARAMETER
TEST CONDITIONS
B(on) = 0.1 A
RL = 30 W
TYP
MAX
UNIT
ton
toff
Turn-on time
Turn-off time
IC = 1 A
I
IB(off) = -0.1 A
0.5
2
µs
µs
VBE(off) = -4.3 V
tp = 20 µs, dc £ 2%
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
P R O D U C T
I N F O R M A T I O N
2
TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
BASE CURRENT
TCS631AA
TCS631AB
1000
100
10
10
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
1·0
0·1
IC = 100 mA
IC = 300 mA
IC = 1 A
IC = 3 A
0·01
0·001
0·01
0·1
1·0
10
0·1
1·0
10
100
1000
IC - Collector Current - A
IB - Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS631AC
1·0
VCE = 4 V
TC = 25°C
0·9
0·8
0·7
0·6
0·5
0·01
0·1
1·0
10
IC - Collector Current - A
Figure 3.
P R O D U C T
I N F O R M A T I O N
3
TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS631AB
100
10
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
1·0
0·1
0·01
TIP31D
TIP31E
TIP31F
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS631AA
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
P R O D U C T
I N F O R M A T I O N
4
TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
10,0
1,32
1,23
3,96
3,71
ø
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
12,7
1,70
1,07
0,97
0,61
1
2
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
P R O D U C T
I N F O R M A T I O N
5
TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
6
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