TIPP32CLPR [BOURNS]
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92, 3 PIN;
| 型号： | TIPP32CLPR |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92, 3 PIN |
| 文件： | 总6页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
MAY 1989 - REVISED MARCH 1997
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20 W Pulsed Power Dissipation
100 V Capability
LP PACKAGE
(TOP VIEW)
E
2 A Continuous Collector Current
4 A Peak Collector Current
1
2
3
C
B
Customer-Specified Selections Available
MDTRAB
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TIPP32
-40
TIPP32A
TIPP32B
TIPP32C
TIPP32
-60
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
VCBO
V
-80
-100
-40
TIPP32A
TIPP32B
TIPP32C
-60
VCEO
V
-80
-100
Emitter-base voltage
VEBO
IC
ICM
IB
-5
V
A
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
-2
-4
A
-1
0.8
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Pulsed power dissipation (see Note 3)
Ptot
PT
W
W
°C
°C
°C
20
Operating junction temperature range
Tj
-55 to +150
-55 to +150
260
Storage temperature range
Tstg
TL
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for tp £ 0.3 ms, duty cycle £ 10%.
2. Derate linearly to 150°C case temperature at the rate of 6.4 mW/°C.
3. VCE = 20 V, IC = 1 A, tp = 10 ms, duty cycle £ 2%.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TIPP32
-40
-60
Collector-emitter
TIPP32A
TIPP32B
TIPP32C
TIPP32
V(BR)CEO
IC
=
-5 mA
IB = 0
V
breakdown voltage
-80
(see Note 4)
-100
VCE
VCE
VCE
=
=
=
-40 V
-60 V
-80 V
V
BE = 0
-0.2
-0.2
-0.2
-0.2
-0.3
-0.3
Collector-emitter
cut-off current
VBE = 0
VBE = 0
VBE = 0
TIPP32A
TIPP32B
TIPP32C
TIPP32/32A
TIPP32B/32C
ICES
mA
VCE = -100 V
Collector cut-off
current
VCE
VCE
=
=
-30 V
-60 V
IB = 0
ICEO
IEBO
hFE
mA
mA
IB = 0
Emitter cut-off
current
VEB
=
-5 V
IC = 0
-1
Forward current
transfer ratio
VCE
VCE
=
=
-4 V
-4 V
IC
IC
=
=
-1 A
-2 A
20
10
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
f = 1 kHz
Collector-emitter
saturation voltage
Base-emitter
VCE(sat)
VBE
IB = -375 mA
IC
IC
=
=
-2 A
-2 A
-1
V
V
VCE
VCE
VCE
=
=
=
-4 V
-10 V
-10 V
-1.5
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
hfe
IC = -0.5 A
IC = -0.5 A
20
3
|hfe|
f = 1 MHz
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
P R O D U C T
I N F O R M A T I O N
2
TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
MECHANICAL DATA
LP003 (TO-92)
3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
LP003 Falls Within JEDEC
TO-226AA Dimensions
LP003 (TO-92)
5,21
4,44
4,19
3,17
3,43 MIN.
2,67
2,03
2,67
2,03
5,34
4,32
Seating Plane
1,27
(see Note A)
12,7 MIN.
0,56
0,40
1
3
1,40
1,14
0,41
0,35
2
2,67
2,41
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: Lead dimensions are not controlled in this area.
MDXXAX
P R O D U C T
I N F O R M A T I O N
3
TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
MECHANICAL DATA
LP003 (TO-92)
3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
LP003 (TO-92) - Formed Leads Version
LP003 Falls Within JEDEC
TO-226AA Dimensions
5,21
4,44
4,19
3,17
3,43 MIN.
2,67
2,03
2,67
2,03
5,34
4,32
4,00 MAX.
0,56
0,40
1
2
3
2,90
2,40
0,41
0,35
2,90
2,40
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXAR
P R O D U C T
I N F O R M A T I O N
4
TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
MECHANICAL DATA
LPR
tape dimensions
LP Package (TO-92) Tape (Formed Lead Version)
5,21
4,44
4,19
3,17
3,43 MIN.
2,67
2,03
2,67
2,03
5,34
4,32
4,00 MAX.
0,56
0,40
0,41
0,35
13,70
11,70
0,50
0,00
32,00
23,00
2,50 MIN.
27,68
17,66
16,50
15,50
11,00
8,50
9,75
8,50
19,00
5,50
19,00
17,50
2,90
2,40
4,30
3,70
ø
2,90
2,40
6,75
5,95
13,00
12,40
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXAS
P R O D U C T
I N F O R M A T I O N
5
TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
6
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