TISP3095T3BJR-S [BOURNS]
Silicon Surge Protector, 95V V(BO) Max, 30A, ROHS COMPLIANT, PLASTIC, SMB, MODIFIED DO-214AA, 3 PIN;
| 型号： | TISP3095T3BJR-S |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Silicon Surge Protector, 95V V(BO) Max, 30A, ROHS COMPLIANT, PLASTIC, SMB, MODIFIED DO-214AA, 3 PIN 光电二极管 |
| 文件： | 总9页 (文件大小：362K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP3070T3BJ THRU TISP3395T3BJ
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP3xxxT3BJ Overvoltage Protector Series
Dual High Current Protectors in a Space Efficient
Package
SMB Package (Top View)
- 2 x 100 A 10/560 Current Rating
1
3
- Modified 3-pin SMB (DO-214AA) Package
50 % Space Saving over Two SMBs
- Y Configurations with Two SMB Packages
2 x 80 A, 10/1000 . . . .TISP3xxxT3BJ + TISP4xxxJ1BJ
2 x 100 A, 10/700 . . . .TISP3xxxT3BJ + TISP4xxxH3BJ
2
MDXXCJA
Device Symbol
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
1
3
(T or R)
(T or R)
- Low Voltage Overshoot under Surge
VDRM
V(BO)
Device
V
V
TISP3070T3
TISP3080T3
TISP3095T3
TISP3115T3
TISP3125T3
TISP3145T3
TISP3165T3
TISP3180T3
TISP3200T3
TISP3219T3
TISP3250T3
TISP3290T3
TISP3350T3
TISP3395T3
58
70
65
80
75
95
SD3TAA
2
(G)
90
115
125
145
165
180
200
219
250
290
350
395
100
120
135
145
155
180
190
220
275
320
Rated for International Surge Wave Shapes
IPPSM
Wave Shape
Standard
A
2/10
8/20
GR-1089-CORE
IEC 61000-4-5
250
250
150
120
100
80
10/160
10/700
10/560
10/1000
TIA/EIA-IS-968 (FCC Part 68)
ITU-T K.20/.21/.45
TIA/EIA-IS-968 (FCC Part 68)
GR-1089-CORE
.......................................UL Recognized Component
Description
These dual bidirectional thyristor devices protect central office, access and customer premise equipment against overvoltages on the
telecom line. The TISP3xxxT3BJ is available in a wide range of voltages and has an 80 A 10/1000 current rating. These protectors have
been specified mindful of the following standards and recommendations: GR-1089-CORE, TIA/EIA-IS-968, UL 60950, EN 60950, IEC
60950, ITU-T K.20, K.21 and K.45. The TISP3350T3BJ meets the FCC Part 68 “B” ringer voltage requirement (VDRM = ±275 V). Housed
in a 3-pin modified SMB (DO-214AA) package, the TISP3xxxT3BJ range is space efficient solution for protection designs of 80 A or less
which use multiple SMBs.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above
V
DRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device
switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted cur-
rent falls below the holding current, IH, level the device switches off and restores normal system operation.
How To Order
Device
Package
Carrier
Order As
TISP3xxxT3BJ
BJ (3-pin modified SMB/DO-214AA J-Bend)
R (Embossed Tape Reeled)
TISP3xxxT3BJR-S
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
Unit
’3070
’3080
’3095
’3115
’3125
’3145
’3165
’3180
’3200
’3219
’3250
’3290
’3350
’3395
±58
±65
±75
±90
±100
±120
±135
±145
±155
±180
±190
±220
±275
±320
Repetitive peak off-state voltage, (terminals 1-2 and 3-2)
VDRM
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
2x250
2x250
2x150
2x120
2x120
2x100
2x80
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 µs voltage wave shape)
5/310 (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/.45/.21)
5/320 (TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 µs voltage wave shape)
10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 µs voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current (see Notes 1 and 2)
IPPSM
A
2x25
2x30
2x1.2
50 Hz, 1 cycle
ITSM
A
60 Hz, 1 cycle
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A
Junction temperature
diT/dt
TJ
500
A/µs
°C
-40 to +150
-65 to +150
Storage temperature range
T
°C
stg
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The rated current values are applied to the terminals 1 and
3 simultaneously (in this case the terminal 2 return current will be the sum of the currents applied to the terminals 1 and 3). The
surge may be repeated after the device returns to its initial conditions.
Recommended Operating Conditions
Component
Min
Typ
Max
Unit
Series resistor for GR-1089-CORE first-level surge survival
5
Series resistor for ITU-T recommendation K.20/.45/.21(coordination with 400 V GDT at 4 kV)
R1, R2 Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 9/720 survival
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/560 survival
6.4
0
Ω
0
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/160 survival
2.5
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, T = 25 °C
A
Parameter
Test Conditions
Min
Typ
Max
Unit
Repetitive peak off-
state current
TA = 25 °C
TA = 85 °C
±5
IDRM
VD = VDRM
µA
±10
’3070
’3080
’3095
’3115
’3125
’3145
’3165
’3180
’3200
’3219
’3250
’3290
’3350
’3395
±70
±80
±95
±115
±125
±145
±165
±180
±200
±219
±250
±290
±350
±395
V(BO) AC breakover voltage
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
V
’3070
’3080
’3095
’3115
’3125
’3145
’3165
’3180
’3200
’3219
’3250
’3290
’3350
’3395
±81
±91
±107
±128
±138
±159
±179
±195
±215
±234
±265
±304
±361
±403
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
Ramp breakover
V(BO)
V
voltage
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
I(BO) Breakover current
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
IT = ±5 A, di/dt = +/-30 mA/ms
±800
mA
mA
IH
dv/dt
ID
Holding current
±150
±5
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85VDRM
kV/µs
µA
Off-state current
VD = ±50 V
TA = 85 °C
±10
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, T = 25 °C (Continued)
A
Parameter
Test Conditions
f = 1 MHz, Vd = 1 V rms, VD = 0,
Min
Typ
Max
Unit
‘3070 thru ‘3095
‘3115 thru ‘3219
‘3250 thru ‘3395
95
69
51
90
63
46
83
59
42
43
29
20
16
114
83
62
‘3070 thru ‘3095
‘3115 thru ‘3219
‘3250 thru ‘3395
f = 1 MHz, Vd = 1 V rms, VD = -1 V
f = 1 MHz, Vd = 1 V rms, VD = -2 V
f = 1 MHz, Vd = 1 V rms, VD = -50 V
108
76
55
‘3070 thru ‘3095
‘3115 thru ‘3219
‘3250 thru ‘3395
100
70
Coff Off-state capacitance
pF
51
51
‘3070 thru ‘3095
‘3115 thru ‘3219
‘3250 thru ‘3395
35
24
19
‘3250 thru ‘3395
f = 1 MHz, Vd = 1 V rms, VD = -100 V
(see Note 3)
NOTE 3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
third terminal is connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
EIA/JESD51-3 PCB, IT = ITSM(1000)
,
RθJA Junction to free air thermal resistance
90
°C/W
TA = 25 °C, (see Note 4)
NOTE 4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
Switching
IPPSM
Characteristic
ITSM
IT
V(BO)
VT
IH
IDRM
ID
VDRM
VD
-v
+v
ID
VD
VDRM
IDRM
IH
VT
V(BO)
IT
ITSM
I
Quadrant III
IPPSM
Switching
Characteristic
-i
PM4XAE
Figure 1. Voltage-Current Characteristic for Terminal Pairs 1-2 and 3-2
All Measurements are Referenced to Terminal 2
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
TC4AH3AB
TC4AH3AA
1.15
10
VD = ±50 V
'3115 thru '3219
1.10
1
'3070 thru '3095
1.05
0·1
'3250 thru'3395
1.00
0·01
0.95
0.90
0·001
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
ON-STATE CURRENT
vs
NORMALIZED HOLDING CURRENT
vs
ON-STATE VOLTAG E
JUNCTION TEMPERATURE
TC4AH3AC
TC3T3AA
2.0
1.5
200
150
TA = 25 °C
tW = 100 µs
100
70
50
40
30
1.0
0.9
20
15
0.8
0.7
10
7
5
4
3
0.6
0.5
2
1.5
0.4
1
-25
0
25
50
75
100 125 150
0.7
1
1.5
2
3
41 5
7
0
15 20
T -
VT - On-State Voltage - V
Junction Temperature - °C
J
Figure 4.
Figure 5.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CAPACITANCE
vs
CAPACITANCE
vs
OFF-STATE VOLTAGE
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
TC4AH3AD
TC4AH3AF
90
80
TJ = 25 °C
80
70
60
50
40
30
VD = 2 V
Vd = 1 V rms
70
60
'3070 thru
'3095
50
40
'3115 thru
'3219
30
'3250 thru
'3395
20
15
10
0.5
1
2
3
5
10
20 30 50 100150
VD - Off-state Voltage - V
50 60 70 80 90100
150
200 250 300 350
VDRM - Repetivive Peak Off-State Voltage - V
Figure 6.
Figure 7.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Rating and Thermal Information
VDRM DERATING FACTOR
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
vs
MINIMUM AMBIENT TEMPERATURE
CURRENT DURATION
TI3TAA
TI4AH3AB
1.00
0.99
0.98
0.97
0.96
0.95
0.94
0.93
0.92
20
15
VGEN = 600 V rms, 50/60 Hz
GEN = 1.4*VGEN/ITSM(t)
R
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB, T = 25 °C
10
9
8
7
6
A
SIMULTANEOUS OPERATION
OF R AND T TERMINALS. G
TERMINALCURRENT = 2xITSM(t)
'3115
thru
'3219
5
4
'3070
thru
'3095
3
2
'3250
thru
'3395
1.5
1
0·1
-40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
1
10
100
1000
t - Current Duration - s
TAMIN - Minimum Ambient Temperature - °C
Figure 8.
Figure 9.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
SMB03 Pad Size
2.50
(.099)
1.00
(.039)
2.80
(.110)
0.80
(.032)
1.75
(.069)
1.75
(.069)
MILLIMETERS
(INCHES)
DIMENSIONS ARE:
MD3BJAAA
Device Symbolization Code
Devices will be coded as below.
Device
Symbolization Code
3070T3
TISP3070T3
TISP3080T3
TISP3095T3
TISP3115T3
TISP3125T3
TISP3145T3
TISP3165T3
TISP3180T3
TISP3200T3
TISP3219T3
TISP3250T3
TISP3290T3
TISP3350T3
TISP3395T3
3080T3
3095T3
3115T3
3125T3
3145T3
3165T3
3180T3
3200T3
3219T3
3250T3
3290T3
3350T3
3395T3
Carrier Information
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed
tape.
Package
Carrier
Standard Quantity
SMB
Embossed Tape Reel Pack
3000
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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