TISP3150F3SL-S [BOURNS]
Silicon Surge Protector, 150V V(BO) Max, 7.1A, ROHS COMPLIANT, SIP-3;
| 型号： | TISP3150F3SL-S |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Silicon Surge Protector, 150V V(BO) Max, 7.1A, ROHS COMPLIANT, SIP-3 |
| 文件： | 总12页 (文件大小：504K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP3125F3, TISP3150F3, TISP3180F3
*RoHS COMPLIANT
MEDIUM-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTORS
TISP31xxF3 (MV) Overvoltage Protector Series
Ion-Implanted Breakdown Region
Precise and Stable Voltage
D Package (Top View)
Low Voltage Overshoot under Surge
G
G
G
G
T
NC
NC
R
1
8
7
6
5
V
V
(BO)
DRM
2
DEVICE
V
V
3
4
‘3125F3
‘3150F3
‘3180F3
100
120
145
125
150
180
NC - No internal connection
Planar Passivated Junctions
Low Off-State Current <10 µA
SL Package (Top View)
Rated for International Surge Wave Shapes
1
2
3
T
G
R
I
TSP
A
Waveshape
Standard
2/10 µs
8/20 µs
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
175
120
60
MD1XAB
10/160 µs
Device Symbol
ITU-T K.20/21
FCC Part 68
10/700 µs
50
T
R
10/560 µs
FCC Part 68
45
35
10/1000 µs
GR-1089-CORE
............................................... UL Recognized Component
Description
SD3XAA
G
These medium-voltage dual bidirectional thyristor protectors are
designed to protect ground backed ringing central office, access
and customer premise equipment against overvoltages caused
by lightning and a.c. power disturbances. Offered in three
voltage variants to meet battery and protection requirements,
they are guaranteed to suppress and withstand the listed
Terminals T, R and G correspond to the
alternative line designators of A, B and C
international lightning surges in both polarities. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover
level, which causes the device to switch. The high crowbar holding current prevents d.c. latchup as the current subsides.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are
virtually transparent to the system in normal operation.
How To Order
Order As
Device
Package
Carrier
Tape And Reeled
Tube
D, Small-outline
SL, Single-in-line
TISP31xxF3DR-S
TISP31xxF3SL-S
TISP31xxF3
Insert 1xx value corresponding to protection voltages of 125, 150 and 180
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
MARCH 1994 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP31xxF3 (MV) Overvoltage Protector Series
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
Unit
‘3125F3
‘3150F3
‘3180F3
±100
±120
±145
Repetitive peak off-state voltage, 0 °C < T < 70 °C
A
V
V
DRM
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
350
175
90
120
60
I
A
PPSM
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
55
38
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
50
50
45
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
35
Non-repetitive peak on-state current, 0 °C < T < 70 °C (see Notes 1 and 3)
A
50 Hz, 1 s
D Package
4.3
7.1
I
A
TSM
SL Package
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
di /dt
250
A/µs
°C
T
Junction temperature
T
-65 to +150
-65 to +150
J
Storage temperature range
T
°C
stg
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially, the TISP® must be in thermal equilibrium with 0 °C < T <70 °C. The surge may be repeated after the TISP® returns to its
J
initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
Electrical Characteristics for R and T Terminal Pair, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
, 0 °C < T < 70 °C
Min
Typ
Max
±10
±10
Unit
µA
Repetitive peak off-
state current
I
I
V
V
= ±2V
DRM
DRM
D
A
Off-state current
= ±50 V
µA
D
D
f = 100 kHz, V = 100 mV , V = 0,
Third terminal voltage = -50 V to +50 V
d
D
D Package
SL Package
0.05
0.03
0.15
0.1
C
Off-state capacitance
pF
off
(see Notes 4 and 5)
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
MARCH 1994 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP31xxF3 (MV) Overvoltage Protector Series
Electrical Characteristics for T and G or R and G Terminals, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
Min
Typ
Max
Unit
Repetitive peak off-
state current
I
V
= ±V
, 0 °C < T < 70 °C
±10
µA
DRM
D
DRM
A
‘3125F3
‘3150F3
‘3180F3
‘3125F3
‘3150F3
‘3180F3
±125
±150
±180
V
Breakover voltage
dv/dt = ±250 V/ms,
R
= 300
SOURCE
Ω
V
V
(BO)
dv/dt
Maximum ramp value = ±500 V
= 50
≤
±1000 V/µs, Linear voltage ramp,
±139
±164
±194
Impulse breakover
voltage
V
(BO)
(BO)
R
Ω
SOURCE
I
Breakover current
On-state voltage
Holding current
dv/dt = ±250 V/ms,
R
= 300
Ω
±0.1
±0.6
±3
A
V
A
SOURCE
V
I = ±5 A, t = 100 µs
T
T
W
I
I = ±5 A, di/dt = -/+30 mA/ms
±0.15
±5
H
T
Critical rate of rise of
off-state voltage
Off-state current
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85V
kV/µs
µA
DRM
I
V
= ±50 V
±10
95
50
D
D
f = 1 MHz, V = 0.1 V r.m.s., V = 0
55
31
15
d
D
f = 1 MHz, V = 0.1 V r.m.s., V = -5 V
d
D
C
Off-state capacitance
pF
off
f = 1 MHz, V = 0.1 V r.m.s., V = -50 V
25
d
D
(see Notes 5 and 6)
NOTES: 6. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section.
Thermal Characteristics
Parameter
Min
Typ
Max
Unit
Test Conditions
= 0.8 W, T = 25 °C
D Package
160
135
P
tot
A
Rθ
Junction to free air thermal resistance
°C/W
JA
SL Package
2
5 cm , FR4 PCB
MARCH 1994 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP31xxF3 (MV) Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
Switching
ITSP
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
V(BR)
I(BR)
V(BR)M
IDRM
ID
VDRM
VD
+v
-v
ID
VD
VDRM
I(BR)
V(BR)
IDRM
V(BR)M
IH
I(BO)
VT
V(BO)
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
PMXXAA
Figure 1. Voltage-Current Characteristics for any Terminal Pair
MARCH 1994 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP31xxF3 (MV) Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
NORMALIZED BREAKDOWN VOLTAGES
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
vs
JUNCTION TEMPERATURE
TC3MAI
TC3MAF
100
10
Normalized to V(BR)
I
(BR) = 100 µA and 25 °C
1.2
1.1
1.0
0.9
Positive Polarity
1
V(BO)
VD = 50 V
0·1
VD = -50 V
V(BR)
0·01
0·001
V(BR)M
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
NORMALIZED BREAKDOWN VOLTAGES
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
vs
JUNCTION TEMPERATURE
TC3MAJ
TC3MAL
100
10
1
Normalized to V(BR)
I(BR) = 100 µA and 25 °C
Negative Polarity
1.2
1.1
1.0
0.9
V(BO)
V(BR)M
V(BR)
25 °C
150 °C
-40 °C
1
2
3
4
5
6
7
8 9 10
-25
0
25
50
75
100 125 150
VT - On-State Voltage - V
Figure 5.
TJ - Junction Temperature - °C
Figure 4.
MARCH 1994 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP31xxF3 (MV) Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
HOLDING CURRENT & BREAKOVER CURRENT
NORMALIZED BREAKOVER VOLTAGE
vs
vs
JUNCTION TEMPERATURE
TC3MAH
RATE OF RISE OF PRINCIPLE CURRENT
TC3MAB
1.0
0.9
0.8
1.3
1.2
1.1
1.0
0.7
0.6
0.5
0.4
I(BO)
Negative
0.3
0.2
IH
Positive
0.1
-25
0
25
50
75
100 125 150
0·001
0·01
0·1
1
10
100
TJ - Junction Temperature - °C
di/dt - Rate of Rise of Principle Current - A/µs
Figure 6.
Figure 7.
OFF-STATE CAPACITANCE
vs
OFF-STATE CAPACITANCE
vs
JUNCTION TEMPERATURE
TERMINAL VOLTAGE
TC3MAE
TC3MAD
100
500
Positive Bias
100
Terminal Bias = 0
Negative Bias
Terminal Bias = 50 V
Terminal Bias = -50 V
10
10
0·1
-25
0
25
50
75
100 125 150
1
10
50
TJ - Junction Temperature - °C
Terminal Voltage - V
Figure 8.
Figure 9.
MARCH 1994 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP31xxF3 (MV) Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
SURGE CURRENT
vs
DECAY TIME
TC3MAA
1000
100
10
2
10
100
1000
Decay Time - µs
Figure 10.
MARCH 1994 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP31xxF3 (LV) Overvoltage Protector Series
Typical Characteristics - R and T Terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC3MAK
TC3MAG
100
VD = ±50 V
Normalized to V(BR)
(BR) = 100 µA and 25 °C
Both Polarities
I
1.2
1.1
1.0
0.9
10
1
V(BO)
0·1
V(BR)M
V(BR)
0·01
0·001
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 11.
Figure 12.
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
OFF-STATE CAPACITANCE
vs
TC3MAC
TERMINAL VOLTAGE
TC3XAA
1.3
1.2
1.1
1.0
100
90
80
70
60
D Package
50
40
SL Package
30
20
Both Voltage Polarities
1
10
0·1
10
50
0·001
0·01
0·1
1
10
100
Terminal Voltage - V
di/dt - Rate of Rise of Principle Current - A/µs
Figure 13.
Figure 14.
MARCH 1994 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP31xxF3 (LV) Overvoltage Protector Series
Thermal Information
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
THERMAL RESPONSE
TI3MAA
CURRENT DURATION
TI3MAB
VGEN = 250 Vrms
100
10
1
RGEN = 10 to 150 Ω
SL Package
10
D Package
SL Package
D Package
100
1
0·1
0·0001 0·001 0·01
0·1
1
10
100 1000
1
10
1000
t - Power Pulse Duration - s
Figure 16.
t - Current Duration - s
Figure 15.
MARCH 1994 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP31xxF3 (MV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Electrical Characteristics
The electrical characteristics of a TISP® device are strongly dependent on junction temperature, T . Hence, a characteristic value will depend
J
on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which
generally minimize the temperature rise caused by testing. Application values may be calculated from the parameters’ temperature coefficient,
the power dissipated and the thermal response curve, Z (see M. J. Maytum, “Transient Suppressor Dynamic Parameters.” TI Technical
θ
Journal, vol. 6, No. 4, pp.63-70, July-August 1989).
Lightning Surge
Wave Shape Notation
Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an
exponential decay. Wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50 % of the
maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time. A 50 A, 5/310 µs wave shape would have a
peak current value of 50 A, a rise time of 5 µs and a decay time of 310 µs. The TISP® surge current graph comprehends the wave shapes of
commonly used surges.
Generators
There are three categories of surge generator type, single wave shape, combination wave shape and circuit defined. Single wave shape
generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 µs open circuit voltage
and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit
current (e.g. 1.2/50 µs open circuit voltage and 8/20 µs short circuit current). Circuit specified generators usually equate to a combination
generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 µs open circuit voltage generator typically
produces a 5/310 µs short circuit current). If the combination or circuit defined generators operate into a finite resistance, the wave shape
produced is intermediate between the open circuit and short circuit values.
Current Rating
When the TISP® device switches into the on-state it has a very low impedance. As a result, although the surge wave shape may be defined in
terms of open circuit voltage, it is the current wave shape that must be used to assess the required TISP® surge capability. As an example, the
ITU-T K.21 1.5 kV, 10/700 µs open circuit voltage surge is changed to a 38 A, 5/310 µs current waveshape when driving into a short circuit.
Thus, the TISP® surge current capability, when directly connected to the generator, will be found for the ITU-T K.21 waveform at 310 µs on the
surge graph and not 700 µs. Some common short circuit equivalents are tabulated below:
Standard
ITU-T K.21
Open Circuit Voltage Short Circuit Current
1.5 kV, 10/700 µs
1 kV, 10/700 µs
37.5 A, 5/310 µs
25 A, 5/310 µs
ITU-T K.20
IEC 61000-4-5, combination wave generator
Telcordia GR-1089-CORE
Telcordia GR-1089-CORE
FCC Part 68, Type A
1.0 kV, 1.2/50 µs
1.0 kV, 10/1000 µs
2.5 kV, 2/10 µs
500 A, 8/20 µs
100 A, 10/1000 µs
500 A, 2/10 µs
1.5 kV, <10/>160 µs
800 V, <10/>560 µs
1.5 kV, 9/720 µs
200 A,<10/>160 µs
100 A,<10/>160 µs
37.5 A, 5/320 µs
FCC Part 68, Type A
FCC Part 68, Type B
Any series resistance in the protected equipment will reduce the peak circuit current to less than the generators’ short circuit value. A 1 kV
open circuit voltage, 100 A short circuit current generator has an effective output impedance of 10 Ω (1000/100). If the equipment has a series
resistance of 25 Ω, then the surge current requirement of the TISP® device becomes 29 A (1000/35) and not 100 A.
MARCH 1994 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP31xxF3 (MV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Protection Voltage
The protection voltage, (V
), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the
(BO)
rate of current rise, di/dt, when the TISP® device is clamping the voltage in its breakdown region. The V
value under surge conditions can
(BO)
(250 V/ms) value by the normalized increase at the surge’s di/dt (Figure 7 ). An estimate of the
be estimated by multiplying the 50 Hz rate V
di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
(BO)
As an example, the ITU-T K.21 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the initial dv/dt is
higher, being in the region of 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional series
resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice, the
measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP® breakdown
region.
Capacitance
Off-state Capacitance
The off-state capacitance of a TISP® device is sensitive to junction temperature, T , and the bias voltage, comprising of the d.c. voltage, V ,
J
D
and the a.c. voltage, V . All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 °C variation
d
of capacitance value with a.c. bias is shown in Figure 17. When V >> V , the capacitance value is independent on the value of V . The
capacitance is essentially constant over the range of normal telecommunication frequencies.
D
d
d
NORMALIZED CAPACITANCE
vs
RMS AC TEST VOLTAGE
1.05
AIXXAA
1.00
0.95
0.90
0.85
0.80
Normalized to Vd = 100 mV
DC Bias, VD = 0
0.75
0.70
1
10
100
1000
Vd - RMS AC Test Voltage - mV
Figure 17.
MARCH 1994 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP31xxF3 (MV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Longitudinal Balance
Figure 18 shows a three terminal TISP® device with its equivalent “delta” capacitance. Each capacitance, C , C
and C , is the true
TR
TG RG
terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T,
then C >C . Capacitance C is equivalent to a capacitance of C in parallel with the capacitive difference of (C -C ). The line
TG RG
TG
TG RG
RG
) and the capacitance shunting the line is C
TG RG
capacitive unbalance is due to (C
-C
+C /2.
TR
RG
All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance
effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is
included.
T
T
(CTG-CRG
)
CTG
CRG
Equipment
Equipment
G
R
G
R
CTR
CTR
CRG
CRG
AIXXAB
CTG > CRG
Equivalent Unbalance
Figure 18.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
MARCH 1994 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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