TISP4080L3AJ [BOURNS]
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS; 双向晶闸管过电压保护
| 型号： | TISP4080L3AJ |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 文件： | 总11页 (文件大小：348K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP4070L3AJ THRU TISP4395L3AJ
T
N
A
I
L
P
S
M
N
E
O
O
L
I
C
B
S
S
A
R
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
H
L
E
I
o
V
A
V
*R
A
TISP4xxxL3AJ Overvoltage Protector Series
SMA (DO-214AC) Package
25% Smaller Placement Area than SMB
SMAJ Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
R (B)
1
2 T (A)
V
V
DRM
(BO)
Device
V
V
MDXXCCE
‘4070
‘4080
‘4090
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4290
‘4320
‘4350
‘4360
‘4395
58
65
70
70
80
90
Device Symbol
100
120
135
145
160
180
200
230
240
275
290
320
125
145
165
180
220
240
260
290
320
350
360
395
T
SD4XAA
R
Terminals T and R correspond to the
alternative line designators of A and B
............................................ UL Recognized Components
Rated for International Surge Wave Shapes
I
TSP
A
Wave Shape
Standard
2/10 µs
8/20 µs
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
125
100
65
10/160 µs
10/700 µs
10/560 µs
10/1000 µs
ITU-T K.20/21/45
FCC Part 68
50
40
GR-1089-CORE
30
How To Order
For Standard
For Lead Free
Termination Finish Termination Finish
Device
Package
Carrier
Embossed Tape Reel Pack
Order As
Order As
TISP4xxxL3AJR
TISP4xxxL3AJR-S
TISP4xxxL3AJ SMA (DO-214AC)
Insert xxx value corresponding to protection voltages of 070, 080, 090, etc.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
The TISP4xxxL3 range consists of fifteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are in an SMAJ
(JEDEC DO-214AC with J-bend leads) plastic package. These devices are supplied in embossed tape reel carrier pack. For alternative voltage
and holding current values, consult the factory. For higher rated impulse currents, the 50 A 10/1000 TISP4xxxM3AJ series in SMA and the 100
A 10/1000 TISP4xxxH3BJ series in SMB are available.
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
± 58
Unit
‘4070
‘4080
‘4090
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4290
‘4320
‘4350
‘4360
‘4395
± 65
± 70
±100
±120
±135
±145
±160
±180
±200
±230
±240
±275
±290
±320
Repetitive peak off-state voltage, (see Note 1)
V
V
DRM
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
125
100
8/20 µs (IEC 61000-4-5,combination wave generator, 1.2/50 voltage, 8/20 current)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/310 µs (ITU-T K.20/21/45, K.44 10/700 µs voltage wave shape)
65
50
I
A
A
TSP
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
20 ms (50 Hz) full sine wave
50
40
30
18
7
1 s (50 Hz) full sine wave
I
TSM
1000 s 50 Hz/60 Hz a.c.
1.6
Junction temperature
T
-40 to +150
-65 to +150
°C
°C
J
Storage temperature range
T
stg
NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/°C.
2. Initially,the TISP4xxxL3 must be in thermal equilibrium with T = 25 °C.
J
3. The surge may be repeated after the TISP4xxxL3 returns to its initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 ° C.
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Recommended Operating Conditions
Component
Min
12
0
Typ
Max
Unit
Ω
series resistor for FCC Part 68, 10/560 type A surge survival
series resistor for FCC Part 68, 9/720 type B surge survival
Ω
R
series resistor for GR-1089-CORE first-level and second-level surge survival
series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival
23
0
Ω
S
Ω
series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
7
Ω
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
Min
Typ
Max
Unit
Repetitive peak off-
state current
T = 25 °C
±5
±10
A
I
V
= V
µA
DRM
D DRM
T = 85 °C
A
‘4070
‘4080
‘4090
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4290
‘4320
‘4350
‘4360
‘4395
±70
±80
±90
±125
±145
±165
±180
±220
±240
±260
±290
±320
±350
±360
±395
±0.8
±0.60
V
Breakover voltage
dv/dt = ±250 V/ms,
R
= 300 Ω
SOURCE
V
(BO)
I
Breakover current
Holding current
dv/dt = ±250 V/ms,
R
= 300 Ω
SOURCE
A
A
(BO)
I
I
= ±5 A, di/dt = +/-30 mA/ms
±0.15
±5
H
T
Critical rate of rise of
off-state voltage
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85V
kV/µs
DRM
‘4070, V = ±52 V
D
‘4080, V = ±59 V
D
‘4090, V = ±63 V
D
‘4125, V = ±90 V
D
‘4145, V = ±108 V
D
‘4165, V = ±122 V
D
‘4180, V = ±131 V
D
I
Off-state current
‘4220, V = ±144 V
±2
µA
D
D
‘4240, V = ±162 V
D
‘4260, V = ±180 V
D
‘4290, V = ±207 V
D
‘4320, V = ±216 V
D
‘4350, V = ±248 V
D
‘4360, V = ±261 V
D
‘4395, V = ±288 V
D
I
Off-state current
V
= ±50 V
±10
µA
D
D
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted) (Continued)
A
Parameter
Test Conditions
f = 1 MHz, V = 1 V rms, V = ±1 V
Min
Typ
53
40
33
25
18
14
Max
64
Unit
4070 thru ‘4090
‘4125 thru ‘4220
‘4240 thru ‘4395
‘4070 thru ‘4090
‘4125 thru ‘4220
‘4240 thru ‘4395
d
D
48
40
C
Off-state capacitance
pF
off
f = 1 MHz, V = 1 V rms, V = ±50 V
30
d
D
22
17
Thermal Characteristics
Parameter
Test Conditions
EIA/JESD51-3 PCB, I = I
Min
Typ
Max
Unit
,
TSM(1000)
T
115
T = 25 °C, (see Note 75)
A
RθJA
Junction to free air thermal resistance
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, I = I , T = 25 °C
52
T
TSM(1000)
A
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
Switching
ITSP
Characteristic
ITSM
IT
V
(BO)
VT
I(BO)
IH
IDRM
ID
VDRM
VD
+v
-v
ID
VD
VDRM
IDRM
IH
I(BO)
VT
V(BO)
IT
ITSM
I
Quadrant III
ITSP
Switching
Characteristic
-i
PMXXAAB
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
TC4LAF
TC4LAG
1.15
10
VD = ±50 V
1.10
1
1.05
0·1
1.00
0·01
0.95
0.90
0·001
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
T - Junction Temperature - °C
T - Junction Temperature - °C
J
J
Figure 3.
Figure 2.
ON-STATE CURRENT
vs
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
ON-STATE VOLTAGE
TC4LAD
TC4MAM
2.0
1.5
50
40
TA = 25 °C
30
tW = 100 µs
20
15
10
7
1.0
0.9
5
4
0.8
0.7
3
'4070
THRU
'4090
2
0.6
0.5
1.5
'4240
THRU
'4395
'4125
THRU
'4220
1
0.7
0.5
0.4
-25
0
T -
25
50
75
100 125 150
0.7
1
1.5
2
3
4
5
7
10
Junction Temperature - °C
J
VT - On-State Voltage - V
Figure 5.
Figure 4.
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Typical Characteristics
DIFFERENTIAL OFF-STATE CAPACITANCE
NORMALIZED CAPACITANCE
vs
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
OFF-STATE VOLTAGE
TC4LABC
TCLAEB
1
30
0.9
TJ = 25 °C
0.8
0.7
Vd = 1 Vrms
25
0.6
0.5
∆C = Coff(-2V) - Coff(-50 V)
'4070 THRU '4090
20
0.4
0.3
'4125 THRU '4220
15
10
'4240 THRU '4395
0.2
0.5
1
2
3
5
10
20 30 50
100150
50 60 70 80 90100
150
200 250 300 350
VD - Off-state Voltage - V
VDRM - Repetitive Peak Off-State Voltage - V
Figure 6.
Figure 7.
TYPICAL CAPACITANCE ASYMMETRY
vs
TC4LBB
OFF-STATE VOLTAGE
1
Vd = 10 mVrms,1 MHz
Vd = 1 Vrms, 1 MHz
0
1
2
3
4
5
7
10
20 30 40 50
Off-state Voltage - V
VD —
Figure 6.
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Rating and Thermal Information
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
VDRM DERATING FACTOR
vs
CURRENT DURATION
MINIMUM AMBIENT TEMPERATURE
TI4LAI
TI4LADB
20
1.00
VGEN = 600 Vrms, 50/60 Hz
15
RGEN = 1.4*VGEN/ITSM(t)
0.99
0.98
0.97
0.96
0.95
0.94
0.93
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
10
9
8
T = 25 °C
A
'4070 THRU '4090
7
6
5
4
'4125 THRU '4220
3
2
'4240 THRU '4395
-40 -35 -30 -25 -20 -15 -10 -5
1.5
0.01
0.1
1
10
100
0
5
10 15 20 25
t - Current Duration - s
Figure 9.
TAMIN - Minimum Ambient Temperature - °C
Figure 10.
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
2.34
(.092)
SMA Land Pattern
1.90
(.075)
2.16
(.085)
MILLIMETERS
(INCHES)
DIMENSIONS ARE:
MDXXBIC
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Symbolization
Device
Code
TISP4070L3
TISP4080L3
TISP4090L3
TISP4125L3
TISP4145L3
TISP4165L3
TISP4180L3
TISP4220L3
TISP4240L3
TISP4260L3
TISP4290L3
TISP4320L3
TISP4350L3
TISP4360L3
TISP4395L3
4070L
4080L
4090L
4125L
4145L
4165L
4180L
4220L
4240L
4260L
4290L
4320L
4350L
4360L
4395L
Carrier Information
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
Carrier
Standard Quantity
Embossed Tape Reel Pack
5,000
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
MECHANICAL DATA
SMAJ (DO-214AC) Plastic Surface Mount Diode Package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMA
4.06 - 4.57
(.160 - .180)
2.29 - 2.92
(.090 - .115)
2
Index
Mark
(if needed)
2.00 - 2.40
(.079 - .095)
1.27 - 1.63
0.10 - 0.20
(.050 - .064)
(.004 - .008)
0.76 - 1.52
(.030 - .060)
1.58 - 2.16
(.062 - .085)
4.83 - 5.59
(.190 - .220)
MILLIMETERS
(INCHES)
DIMENSIONS ARE:
MDXXCAA
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
MECHANICAL DATA
Tape Dimensions
SMA Package Single-Sprocket Tape
3.90 - 4.10
(.154 - .161)
1.55 - 1.65
(.061 - .065)
1.95 - 2.05
(.077 - .081)
0.40
(.016)
1.65 - 1.85
(.065 - .073)
MAX.
5.45 - 5.55
(.215 - .219)
11.70 - 12.30
(.461 - .484)
8.20
(.323)
MAX.
3.90 - 4.10
(.154 - .161)
1.5
(.059)
Cover
Tape
MIN.
0 MIN.
4.50
(.177)
MAX.
Carrier Tape
Embossment
Direction of Feed
20°
Maximum component
rotation
Typical component
cavity center line
Index
Mark
(If needed)
Typical component
center line
MILLIMETERS
(INCHES)
DIMENSIONS ARE:
NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in)
MDXXCGA
MAX. so that the component cannot rotate more than 20° within the determined cavity.
B. Taped devices are supplied on a reel of the following dimensions:
Reel diameter:
330 mm ± 3.0 mm (12.99 in ± .12 in)
Reel hub diameter: 75 mm (2.95 in) MIN.
Reel axial hole:
13.0 mm ± 0.5 mm (.51 in ± .02 in)
C. 5000 devices per reel.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company and Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
相关型号：
TISP4080M3BJR-STISP4080M3BJR-S
Silicon Surge Protector, 80V V(BO) Max, 32A, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
BOURNS
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