TISP4160LP [BOURNS]
Silicon Surge Protector, 160V V(BO) Max, 2.5A, TO-92, PLASTIC, LP003, 3 PIN;
| 型号： | TISP4160LP |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Silicon Surge Protector, 160V V(BO) Max, 2.5A, TO-92, PLASTIC, LP003, 3 PIN |
| 文件： | 总7页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP4160LP, TISP4180LP
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
Copyright © 1997, Power Innovations Limited, UK
APRIL 1987 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
●
Ion-Implanted Breakdown Region
Precise and Stable Voltage
LP PACKAGE
(TOP VIEW)
Low Voltage Overshoot under Surge
A(T)
NC
1
2
3
V(Z)
V(BO)
DEVICE
B(R)
V
V
‘4160LP
‘4180LP
120
145
160
180
MDTRAB
NC - No internal connection
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
●
●
Planar Passivated Junctions
Low Off-State Current < 10 µA
Rated for International Surge Wave Shapes
A(T)
NC
1
2
3
ITSP
WAVE SHAPE
STANDARD
A
100
38
8/20 µs
ANSI C62.41
RLM 88
B(R)
0.2/310 µs
MD4XAF
VDE 0433
50
NC - No internal connection
10/700 µs
CCITT IX K17
38
device symbol
●
●
Package Options
PACKAGE
LP
PACKING
Bulk
PART # SUFFIX
None
R
LP with fomed leads
Tape and Reel
UL Recognized, E132482
description
The TISP4xxxLP series is designed specifically
for telephone equipment protection against
lightning and transients induced by a.c. power
lines. These devices consist of a bidirectional
suppressor element connecting the A and B
terminals. They will suppress inter-wire voltage
transients.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP4160LP, TISP4180LP
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17, open-circuit voltage wave shape 1.5 kV, 10/700 µs)
Non-repetitive peak on-state current, 50 Hz, 1 s (see Notes 1 and 2)
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
100
50
ITSP
A
38
38
ITSM
diT/dt
TJ
2.5
A rms
A/µs
°C
250
150
Operating free - air temperature range
0 to 70
-40 to +150
260
°C
Storage temperature range
Tstg
°C
Lead temperature 1.5 mm from case for 10 s
Tlead
°C
NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature
2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
electrical characteristics, T = 25°C
J
TISP4160
TYP
TISP4180
TYP
PARAMETER
TEST CONDITIONS
UNIT
V
MIN
MAX
MIN
MAX
Reference zener
voltage
VZ
IZ = ± 1mA
± 120
± 145
Temperaturecoefficient
of reference voltage
µ
VZ
0.1
0.1
%/oC
V(BO) Breakover voltage
I(BO) Breakover current
VTM Peak on-state voltage
(see Notes 4 and 5)
(see Note 4)
± 160
± 180
± 0.6
± 3
V
A
± 0.15
± 150
± 0.6 ± 0.15
± 3
IT = ± 5 A
(see Notes 4 and 5)
± 2.2
± 2.2
V
IH
Holding current
Critical rate of rise of
off-state voltage
Off-state leakage
current
(see Note 4)
± 150
mA
dv/dt
(see Note 6)
± 5
± 5
kV/ms
ID
VD = ± 50 V
± 10
± 10
mA
Coff
Off-state capacitance
VD = 0
f = 1 kHz
70
150
70
150
pF
NOTES: 4. These parameters must be measured using pulse techniques, tw = 100 ms, duty cycle £ 2%.
5. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
6. Linear rate of rise, maximum voltage limited to 80 % VZ (minimum).
.
thermal characteristics
PARAMETER
RqJA Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
156
°C/W
P R O D U C T
I N F O R M A T I O N
2
TISP4160LP, TISP4180LP
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTICS FOR TERMINALS A AND B
P R O D U C T
I N F O R M A T I O N
3
TISP4160LP, TISP4180LP
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
MECHANICAL DATA
LP003 (TO-92)
3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
LP003 Falls Within JEDEC
TO-226AA Dimensions
LP003 (TO-92)
5,21
4,44
4,19
3,17
3,43 MIN.
2,67
2,03
2,67
2,03
5,34
4,32
Seating Plane
1,27
(see Note A)
12,7 MIN.
0,56
0,40
1
3
1,40
1,14
0,41
0,35
2
2,67
2,41
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: Lead dimensions are not controlled in this area.
MDXXAX
P R O D U C T
I N F O R M A T I O N
4
TISP4160LP, TISP4180LP
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
MECHANICAL DATA
LP003 (TO-92)
3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
LP003 (TO-92) - Formed Leads Version
LP003 Falls Within JEDEC
TO-226AA Dimensions
5,21
4,44
4,19
3,17
3,43 MIN.
2,67
2,03
2,67
2,03
5,34
4,32
4,00 MAX.
0,56
0,40
1
2
3
2,90
2,40
0,41
0,35
2,90
2,40
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXAR
P R O D U C T
I N F O R M A T I O N
5
TISP4160LP, TISP4180LP
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
MECHANICAL DATA
LPR
tape dimensions
LP Package (TO-92) Tape (Formed Lead Version)
5,21
4,44
4,19
3,17
3,43 MIN.
2,67
2,03
2,67
2,03
5,34
4,32
4,00 MAX.
0,56
0,41
0,35
0,40
13,70
11,70
0,50
0,00
32,00
23,00
2,50 MIN.
27,68
17,66
16,50
15,50
11,00
8,50
9,75
8,50
19,00
5,50
19,00
17,50
2,90
2,40
4,30
3,70
ø
2,90
2,40
6,75
5,95
13,00
12,40
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXAS
P R O D U C T
I N F O R M A T I O N
6
TISP4160LP, TISP4180LP
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
7
相关型号：
TISP4165H3BJ-S
Silicon Surge Protector, 165V V(BO) Max, 60A, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
BOURNS
TISP4165H3BJ-STISP4165H3BJ-S
Silicon Surge Protector, 165V V(BO) Max, 60A, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
BOURNS
TISP4165H3BJR-STISP4165H3BJR-S
Silicon Surge Protector, 165V V(BO) Max, 60A, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
BOURNS
TISP4165H3LMFR-S
Silicon Surge Protector, 165V V(BO) Max, 2.3A, DO-92, ROHS COMPLIANT, PLASTIC, LMF PACKAGE-3
BOURNS
TISP4165H3LMR-S
Silicon Surge Protector, 165V V(BO) Max, 2.3A, DO-92, ROHS COMPLIANT, PLASTIC, LM PACKAGE-3
BOURNS
©2020 ICPDF网 联系我们和版权申明