TISP4290J3BJ [BOURNS]
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS; 双向晶闸管过电压保护
| 型号： | TISP4290J3BJ |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 文件： | 总8页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP4290J3BJ THRU TISP4395J3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxJ3BJ Overvoltage Protector Series
Ion-Implanted Breakdown Region
-Precise and Stable Voltage
SMB Package (Top View)
-Low Voltage Overshoot Under Surge
Designed for Transformer Center Tap (Ground Return)
Overvoltage Protection
R
T
-Enables GR-1089-CORE Compliance
-High Holding Current Allows Protection of Data Lines
with d.c. Power Feed
MDXXBGI
Can be Used to Protect Rugged Modems Designed for Exposed
Applications Exceeding TIA-968-A
Device Symbol
T
VDRM
V(BO)
Device Name
V
V
TISP4290J3BJ
TISP4350J3BJ
TISP4395J3BJ
220
275
320
290
350
395
R
Rated for International Surge Wave Shapes
SD4XAp
IPPSM
Wave Shape
Standard
A
2/10
8/20
GR-1089-CORE
IEC 61000-4-5
1000
800
400
350
250
200
10/160
10/700
10/560
10/1000
TIA-968-A (FCC Part 68)
ITU-T K.20/21/45
TIA-968-A (FCC Part 68)
GR-1089-CORE
............................................ UL Recognized Components
Description
The range of TISP4xxxJ3BJ devices are designed to limit overvoltages on telecom lines. The TISP4xxxJ3BJ is primarily designed to address
GR-1089-CORE compliance on data transmission lines with d.c. power feeding. When overvoltage protection is applied to transformer
coupled lines from the transformer center tap to ground, the total ground return current can be 200 A, 10/1000 and 1000 A, 2/10. The high
150 mA holding current is set above common d.c. feed system levels to allow the TISP4xxxJ3BJ to reset following a disturbance.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, V
DRM
, see Figure 1. Voltages above V
DRM
are limited and will not exceed the breakover voltage, V
, level. If sufficient current flows due to the overvoltage, the device switches into a
low voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the
(BO)
holding current, I , level the devices switches off and restores normal system operation.
H
How to Order
For Standard
For Lead Free
Termination Finish Termination Finish
Device
Package
Carrier
Order As
Order As
Marking Code Std. Qty.
4xxxJ3 3000
TISP4xxxJ3BJ SMB (DO-214AA) Embossed Tape Reeled TISP4xxxJ3BJR
Insert xxx value corresponding to device name.
TISP4xxxJ3BJR-S
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
Unit
'4290
'4350
'4395
±220
±275
±320
Repetitive peak off-state voltage
VDRM
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1000
800
400
370
350
350
250
200
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (TIA-968-A (Replaces FCC Part 68), 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
IPPSM
A
A
5/320 (TIA-968-A (Replaces FCC Part 68), 9/720 voltage wave shape, single)
10/560 (TIA-968-A (Replaces FCC Part 68), 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current (see Notes 1 and 2)
ITSM
80
50 Hz, 1 cycle
60 Hz, 1 cycle
100
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A
Junction temperature
diT/dt
TJ
800
A/µs
°C
-40 to +150
-65 to +150
Storage temperature range
Tstg
°C
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
Min
Typ
Max
Unit
Repetitive peak off-
state current
TA = 25 °C
TA = 85 °C
±5
IDRM
VD = ±VDRM
µA
±10
'4290
'4350
'4395
±290
±350
±395
V(BO) AC breakover voltage
dv/dt = ±250 V/ms, RSOURCE = 300
V
V
V
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
'4290
'4350
'4395
±303
±364
±409
Ramp breakover
V(BO)
voltage
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
'4290
'4350
'4395
±320
±386
±434
Impulse breakover
2/10 wave shape, IPP = ±1000 A, RS = 2.5 Ω,
V(BO)
voltage
(see Note 3)
I(BO) Breakover current
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
IT = ±5 A, di/dt = +/-30 mA/ms
±600
mA
mA
IH
Holding current
±150
±5
Critical rate of rise of
off-state voltage
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85 VDRM
kV/µs
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
Min
Typ
Max
±10
125
115
105
50
Unit
ID
Off-state current
VD = ±50 V
TA = 85 °C
µA
f = 1 MHz, Vd = 1 V rms, VD = 0
f = 1 MHz, Vd = 1 V rms, VD = -1 V
f = 1 MHz, Vd = 1 V rms, VD = -2 V
f = 1 MHz, Vd = 1 V rms, VD = -50 V
f = 1 MHz, Vd = 1 V rms, VD = -100 V
105
95
90
42
35
Coff Off-state capacitance
pF
40
NOTE 3: Dynamic voltage measurements should be made with an oscilloscope with limited band width (20 MHz) to avoid high frequency
noise.
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C,
RθJA Junction to free air thermal resistance
90
°C/W
(see Note 4)
NOTE 4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
Switching
IPPSM
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
IDRM
VDRM
VD
ID
-v
+v
VD
ID
VDRM
IDRM
IH
I(BO)
VT
V(BO)
IT
ITSM
Quadrant III
IPPSM
Switching
Characteristic
-i
PM4XAG
Figure 1. Voltage-Current Characteristic for Terminals T and R
All Measurements are Referenced to Terminal T
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC4JAF
TC4JAG
1.15
1.10
1.05
1.00
0.95
0.90
100
10
VD = ±50 V
1
0.1
0.01
0.001
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100
125
150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
NORMALIZED HOLDING CURRENT
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
vs
JUNCTION TEMPERATURE
TC4JAD
TC4JAA
2.0
1.5
400
300
TA = 25 °C
W = 100 µs
200
150
t
100
70
50
40
30
1.0
0.9
20
15
0.8
0.7
10
7
0.6
0.5
5
4
3
2
1.5
0.4
1
0.7
-25
0
25
50
75
100 125 150
1
1.5
2
3
4
5
7
10
15
TJ - Junction Temperature - °C
VT - On-State Voltage - V
Figure 4.
Figure 5.
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Typical Characteristics
DIFFERENTIAL OFF-STATE CAPACITANCE
NORMALIZED CAPACITANCE
vs
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
OFF-STATE VOLTAGE
TC4JABB
TC4JAE
1
90
0.9
TJ = 25 °C
0.8
0.7
Vd = 1 Vrms
80
0.6
0.5
70
C = Coff(-2 V) - Coff(-50 V)
0.4
0.3
60
50
40
0.2
0.5
1
2
3
5
10
20 30 50
100150
50 60 70 80 90100
150
200 250 300 350
VD - Off-state Voltage - V
VDRM - Repetitive Peak Off-State Voltage - V
Figure 6.
Figure 7.
NORMALIZED CAPACITANCE ASYMMETRY
vs
OFF-STATE VOLTAGE
TC4JCC
2.5
Vd = 10 mV rms, 1 MHz
2.0
1.5
1.0
Vd = 1 V rms, 1 MHz
0.5
0.0
0.5 0.7
1
2
3
4 5
7
10
20 30 4050
VD — Off-State Voltage — V
Figure 8.
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Rating and Thermal Characteristics
VDRM DERATING FACTOR
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
vs
MINIMUM AMBIENT TEMPERATURE
CURRENT DURATION
TI4JAA
40
30
1.00
0.99
0.98
0.97
0.96
0.95
0.94
0.93
VGEN = 600 Vrms, 50/60 Hz
GEN = 1.4*VGEN /ITSM(t)
R
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
20
15
10
9
8
7
6
5
4
3
2
0.1
1
10
100
1000
-40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
t - Current Duration - s
TAMIN - Minimum Ambient Temperature - °C
Figure 9.
Figure 10.
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Applications Circuits
Protection
F1
Ring
Detector
Polarity
Bridge
R
Relay
High current
Fuse
C1
R1
C2
D1 D2
D3 D4
Th1
D5
D6
Hook
Switch
T1
C3
DC
Signal
Sink
R2
T
TISP
4350J3BJ
D7
Isolation Barrier
AI4MMABB
OC1
F1a
F1b
Tx
T
R
TISP4350J3BJ
d.c.
feed
F2a
Rx
T
F2b
R
TISP4350J3BJ
AI4MMAB
F1 & F2 = B1250T
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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