TISP4350J1BJR-S [BOURNS]
Silicon Surge Protector, 350V V(BO) Max, 100A, DO-214AA, ROHS COMPLIANT, SMB, 2 PIN;
| 型号： | TISP4350J1BJR-S |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Silicon Surge Protector, 350V V(BO) Max, 100A, DO-214AA, ROHS COMPLIANT, SMB, 2 PIN 光电二极管 |
| 文件： | 总7页 (文件大小：560K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP4070J3BJ THRU TISP4395J3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxJ3BJ Overvoltage Protector Series
Ion-Implanted Breakdown Region
-Precise and Stable Voltage
SMB Package (Top View)
-Low Voltage Overshoot Under Surge
Designed for Transformer Center Tap (Ground Return)
Overvoltage Protection
R
1
2
T
-Enables GR-1089-CORE Compliance
-High Holding Current Allows Protection of Data Lines
with d.c. Power Feed
MD-SMB-004-a
Can be Used to Protect Rugged Modems Designed for Exposed
Applications Exceeding TIA-968-A
Device Symbol
T
VDRM
V
58
V(BO)
V
70
Device Name
TISP4070J3BJ
TISP4080J3BJ
TISP4095J3BJ
TISP4115J3BJ
TISP4125J3BJ
TISP4145J3BJ
TISP4165J3BJ
TISP4180J3BJ
TISP4200J3BJ
TISP4219J3BJ
TISP4250J3BJ
TISP4290J3BJ
TISP4350J3BJ
TISP4395J3BJ
65
75
90
80
95
115
125
145
165
180
200
219
250
290
350
395
R
100
120
135
145
155
180
190
220
275
320
SD-TISP4xxx-001-a
Rated for International Surge Wave Shapes
IPPSM
A
Wave Shape
Standard
2/10
8/20
GR-1089-CORE
IEC 61000-4-5
TIA-968-A
1000
800
400
350
250
200
10/160
10/700
10/560
10/1000
ITU-T K.20/21/45
TIA-968-A
GR-1089-CORE
.................................................UL Recognized Component
Description
The range of TISP4xxxJ3BJ devices are designed to limit overvoltages on telecom lines. The TISP4xxxJ3BJ is primarily designed to address
GR-1089-CORE compliance on data transmission lines with d.c. power feeding. When overvoltage protection is applied to transformer coupled
lines from the transformer center tap to ground, the total ground return current can be 200 A, 10/1000 and 1000 A, 2/10. The high 150 mA
holding current is set above common d.c. feed system levels to allow the TISP4xxxJ3BJ to reset following a disturbance.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, V
, see Figure 1. Voltages above V
DRM
DRM
are limited and will not exceed the breakover voltage, V
, level. If sufficient current flows due to the overvoltage, the device switches into a
(BO)
low voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the
holding current, I , level the devices switches off and restores normal system operation.
H
How to Order
Device
Package
Carrier
Order As
TISP4xxxJ3BJR-S
Marking Code Std. Qty.
4xxxJ3 3000
TISP4xxxJ3BJ SMB (DO-214AA) Embossed Tape Reeled
Insert xxx value corresponding to device name.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
Unit
‘4171J3BJ
‘4181J3BJ
‘4195J3BJ
‘4±±5J3BJ
‘4±25J3BJ
‘4±45J3BJ
‘4±65J3BJ
‘4±81J3BJ
‘4211J3BJ
‘42±9J3BJ
‘4251J3BJ
‘4291J3BJ
‘4351J3BJ
‘4395J3BJ
±58
±65
±75
±91
±±11
±±21
±±35
±±45
±±55
±±81
±±91
±221
±275
±321
Repetitive peak off-state voltage
VDRM
V
Non-repetitive peak impulse current (see Notes ± and 2)
2/±1 µs (GR-±189-CORE, 2/±1 µs voltage wave shape)
8/21 µs (IEC 6±111-4-5, combination wave generator, ±.2/51 µsvoltage wave shape)
±1/±61 µs (TIA-968-A, ±1/±61 µs voltage wave shape)
4/251 µs (ITU-T K.21/2±, ±1/711 µs voltage waveshape, simultaneous)
5/3±1 µs (ITU-T K.21/2±, ±1/711 µs voltage wave shape, single)
5/321 µs (TIA-968-A, 9/721 µs voltage waveshape, single)
±1/561 µs (TIA-968-A, ±1/561 µs voltage wave shape)
±±111
±811
±411
±371
±351
±351
±251
±211
IPPSM
A
±1/±111 µs (GR-±189-CORE, ±1/±111 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes ± and 2)
21 ms, 51 Hz (full sine wave)
ITSM
diT/dt
TJ
51
A
Initial rate of rise of on-state current. Linear current ramp. Maximum ramp value < 51 A
Junction temperature
811
A/µs
-41 to +±51 °C
-65 to +±51 °C
Storage temperature range
Tstg
NOTES: ±. Initially the device must be in thermal equilibrium with TJ = 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
Min Typ Max Unit
Repetitive peak
off-state current
TA = 25 °C
TA = 85 °C
±5
µA
IDRM
VD = VDRM
±±1
‘4171J3BJ
‘4181J3BJ
‘4195J3BJ
‘4±±5J3BJ
‘4±25J3BJ
‘4±45J3BJ
‘4±65J3BJ
‘4±81J3BJ
‘4211J3BJ
‘42±9J3BJ
‘4251J3BJ
‘4291J3BJ
‘4351J3BJ
‘4395J3BJ
±71
±81
±95
±±±5
±±25
±±45
±±65
±±81
V(BO)
AC Breakover voltage
dv/dt = ±251 V/ms, RSOURCE = 311 Ω
V
±211
±2±9
±251
±291
±351
±395
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
Min Typ Max Unit
‘4171J3BJ
‘4181J3BJ
‘419ꢀJ3BJ
‘4±±ꢀJ3BJ
‘4±ꢁꢀJ3BJ
‘4±4ꢀJ3BJ
‘4±6ꢀJ3BJ
‘4±81J3BJ
‘4ꢁ11J3BJ
‘4ꢁ±9J3BJ
‘4ꢁꢀ1J3BJ
‘4ꢁ91J3BJ
‘43ꢀ1J3BJ
‘439ꢀJ3BJ
±77
±88
±±14
±±ꢁꢀ
±±3ꢀ
±±ꢀ6
dv/dt ≤ ±±111 V/µs, Linear voltage ramp,
Maximum ramp value = ±ꢀ11 V
di/dt = ±ꢁ1 A/µs, Linear current ramp,
Maximum ramp value = ±±1 A
±±77
±±9ꢁ
V(BO)
Ramp breakover voltage
V
±ꢁ±ꢁ
±ꢁ3±
±ꢁ63
±313
±364
±419
‘4171J3BJ thru ‘4±±ꢀJ3BJ
‘4±ꢁꢀJ3BJ thru ‘4ꢁ±9J3BJ
‘4ꢁꢀ1J3BJ thru ‘439ꢀJ3BJ
±911
I(BO)
Breakover current
Holding current
dv/dt = ±ꢁꢀ1 V/ms, RSOURCE = 311 Ω
±811 mA
±611
IH
dv/dt
ID
IT = ±ꢀ A, di/dt = ±31 mA/ms
±±ꢀ1
±ꢀ
±611 mA
Critical rate of rise of
off-state voltage
Linear voltage ramp
Maximum ramp value < 1.8ꢀVDRM
kV/µs
Off-state current
VD = ±ꢀ1 V
TA = 8ꢀ °C
‘4171J3BJ thru ‘4±±ꢀJ3BJ
‘4±ꢁꢀJ3BJ thru ‘4ꢁ±9J3BJ
‘4ꢁꢀ1J3BJ thru ‘439ꢀJ3BJ
‘4171J3BJ thru ‘4±±ꢀJ3BJ
‘4±ꢁꢀJ3BJ thru ‘4ꢁ±9J3BJ
‘4ꢁꢀ1J3BJ thru ‘439ꢀJ3BJ
‘4171J3BJ thru ‘4±±ꢀJ3BJ
‘4±ꢁꢀJ3BJ thru ‘4ꢁ±9J3BJ
‘4ꢁꢀ1J3BJ thru ‘439ꢀJ3BJ
‘4171J3BJ thru ‘4±±ꢀJ3BJ
‘4±ꢁꢀJ3BJ thru ‘4ꢁ±9J3BJ
‘4ꢁꢀ1J3BJ thru ‘439ꢀJ3BJ
‘4±ꢁꢀJ3BJ thru ‘4ꢁ±9J3BJ
‘4ꢁꢀ1J3BJ thru ‘439ꢀJ3BJ
±±1
±9ꢀ ꢁ3ꢀ
±ꢁ1 ±4ꢀ
±1ꢀ ±ꢁꢀ
±81 ꢁ±ꢀ
±±1 ±3ꢁ
9ꢀ ±±ꢀ
±6ꢀ ꢁ11
±11 ±ꢁ1
91 ±1ꢀ
8ꢀ ±11
µA
f = ± MHz, Vd = ± V rms, VD = 1
f = ± MHz, Vd = ± V rms, VD = -± V
f = ± MHz, Vd = ± V rms, VD = -ꢁ V
f = ± MHz, Vd = ± V rms, VD = -ꢀ1 V
CO
Off-state capacitance
pF
ꢀ1
4ꢁ
41
3ꢀ
61
ꢀ1
ꢀ1
41
f = ± MHz, Vd = ± V rms, VD = -±11 V
(see Note 3)
NOTE: 3. To avoid possible clipping, the TISP4±ꢁꢀJ3BJ is tested with VD = -98 V.
Thermal Characteristics
Parameter
Test Conditions
EIA/JESDꢀ±-3 PCB, IT = ITSM(±111)
(see Note 4)
Min Typ Max Unit
91 °C/W
RθJA
Junction to ambient thermal resistance
NOTE: 4. EIA/JESDꢀ±-ꢁ environment and PCB has standard footprint dimensions connected with ꢀ A rated printed wiring track widths.
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Parameter Measurement Information
+i
IPPSM
Quadrant I
Switching
Characteristic
ITSM
ITRM
IT
V(BO)
VT
I(BO)
IH
V(BR)
I(BR)
V(BR)M
IDRM
VDRM
VD
ID
+v
-v
ID
VD
VDRM
I(BR)
V(BR)
IDRM
V(BR)M
IH
I(BO)
VT
V(BO)
IT
ITRM
ITSM
Quadrant III
Switching
Characteristic
IPPSM
PM-TISP4xxx-001-a
-i
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC4JAF
TC4JAG
1.15
100
VD
= 50 V
1.10
1.05
1.00
0.95
0.90
10
1
0·1
0·01
0·001
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
NORMALIZED CAPACITANCE
vs
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TC4JAD
OFF-STATE VOLTAGE
TC4JABB
2.0
1.5
1
0.9
TJ = 25 °C
0.8
0.7
Vd = 1 Vrms
0.6
0.5
1.0
0.9
0.8
0.7
0.4
0.3
0.6
0.5
0.4
0.2
0.5
-25
0
25
50
75
100 125 150
1
2
3
5
10
20 30 50
100 150
TJ - Junction Temperature - °C
VD - Off-state Voltage - V
Figure 4.
Figure 5.
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Rating and Thermal Characteristics
VDRM DERATING FACTOR
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
vs
MINIMUM AMBIENT TEMPERATURE
CURRENT DURATION
TI4JADCa
TI4JAA
1.00
0.99
0.98
0.97
0.96
0.95
0.94
0.93
40
30
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
20
15
10
9
8
7
6
'4070J3BJ thru '4115J3BJ
'4125J3BJ thru '4219J3BJ
5
4
3
2
'4250J3BJ thru '4395J3BJ
-40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
0·1
1
10
100
1000
t - Current Duration - s
TA(MIN) - Minimum Ambient Temperature - °C
Figure 7.
Figure 6.
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Applications Information
Protection
F1
Ring
Detector
Polarity
Bridge
R
Relay
High current
Fuse
C1
R1
C2
D1 D2
D3 D4
Th1
D5
D6
Hook
Switch
T1
C3
DC
Signal
Sink
R2
T
TISP
4350J3BJ
D7
Isolation Barrier
AI4MMABB
OC1
Figure 8. Typical Application Circuit
F1a
Tx
T
F1b
R
TISP4350J3BJ
d.c.
feed
F2a
F2b
Rx
T
R
TISP4350J3BJ
AI4MMAB
F1 & F2 = B1250T
Figure 9. Typical Application Circuit
“TISP” is a registered trademark of Bourns Ltd., a Bourns Company, in the United States and other countries, except that “TISP” is a registered trademark of Bourns, Inc. in China.“Bourns” is
a registered trademark of Bourns, Inc. in the U.S. and other countries.
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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