TISP44150F3LM-S [BOURNS]
Trigger Device;型号: | TISP44150F3LM-S |
厂家: | BOURNS ELECTRONIC SOLUTIONS |
描述: | Trigger Device |
文件: | 总8页 (文件大小:295K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
T
TISP4072F3LM THRU TISP4082F3LM,
TISP4125F3LM THRU TISP4180F3LM,
TISP4240F3LM THRU TISP4380F3LM
N
A
I
L
P
M
O
C
S
H
o
R
*
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxF3LM Overvoltage Protector Series
Ion-Implanted Breakdown Region
Precise and Stable Voltage
LM Package (Top View)
Low Voltage Overshoot under Surge
T(A)
NC
R(B)
1
2
3
V
V
DRM
V
(BO)
V
Device
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
58
66
72
MD4XAT
82
NC - No internal connection on pin 2
100
120
145
180
200
220
240
270
125
150
180
240
260
290
320
380
LMF Package (LM Package with Formed Leads) (Top View)
T(A)
1
2
3
NC
R(B)
MD4XAKB
NC - No internal connection on pin 2
Rated for International Surge Wave Shapes
I
TSP
A
Waveshape
Standard
Device Symbol
T
10/160 µs
0.5/700 µs
10/700 µs
10/560 µs
10/1000 µs
FCC Part 68
I3124
60
38
50
45
35
ITU-T K.20/21
FCC Part 68
REA PE-60
R
SD4XAA
.............................................. UL Recognized Component
Terminals T and R correspond to the
alternative line designators of A and B
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
How To Order
Device
Package
Carrier
Bulk Pack
Order As
TISP4xxxF3LM-S
TISP4xxxF3LMR-S
Straight Lead DO-92 (LM)
TISP4xxxF3LM
Tape and Reeled
Formed Lead DO-92 (LMF) Tape and Reeled TISP4xxxF3LMFR-S
Insert xxx value corresponding to protection voltages of 072, 082, 125 etc.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxF3LM Overvoltage Protector Series
Description (continued)
This TISP4xxxF3LM range consists of ten voltage variants to meet various maximum system voltage levels (58 V to 270 V). They are guaran-
teed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied in a DO-92
(LM) cylindrical plastic package. The TISP4xxxF3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The
TISP4xxxF3LMF is a formed lead DO-92 supplied only on tape and reeled.
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
± 58
± 66
Unit
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
± 100
± 120
± 145
± 180
± 200
± 220
± 240
± 270
Repetitive peak off-state voltage (0 °C < T < 70 °C)
V
V
J
DRM
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) excluding ‘4072 - ‘4082
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) excluding ‘4072 - ‘4082
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 2 kV, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 1.5 kV, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K.20/21, 1.5 kV, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 2 kV, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (REA PE-60, 10/1000 µs voltage wave shape)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) ‘4072 - ‘4082 only
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) ‘4072 - ‘4082 only
Non-repetitive peak on-state current (see Notes 2 and 3)
50/60 Hz, 1 s
175
120
60
50
38
38
50
45
35
80
70
I
A
A
TSP
I
4
TSM
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
di /dt
250
A/µs
°C
T
T
-40 to +150
-55 to +150
J
Storage temperature range
T
°C
stg
NOTES: 1. Initially the TISP must be in thermal equilibrium with 0 °C < T < 70 °C.
J
2. The surge may be repeated after the TISP returns to its initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxF3LM Overvoltage Protector Series
Electrical Characteristics for R and T Terminals, T = 25 °C (Unless Otherwise Noted)
J
Parameter
Test Conditions
Min
Typ
Max
Unit
Repetitive peak off-
state current
I
V
= ±V
, 0 °C < T < 70 °C
±10
µA
DRM
D
DRM
J
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
±72
±82
±125
±150
±180
±240
±260
±290
±320
±380
±86
V
Breakover voltage
dv/dt = ±250 V/ms,
R
= 300 Ω
V
(BO)
SOURCE
±96
±143
±168
±198
±267
±287
±317
±347
±407
±0.6
±3
Impulse breakover
voltage
dv/dt = ±1000 V/µs,
di/dt < 20 A/µs
R
= 50 Ω
SOURCE
V
V
(BO)
I
Breakover current
On-state voltage
Holding current
dv/dt = ±250 V/ms,
R
= 300 Ω
±0.15
A
V
A
(BO)
SOURCE
V
I = ±5 A, t = 100 µs
T W
T
I
I = ±5 A, di/dt = - /+30 mA/ms
±0.15
±5
H
T
Critical rate of rise of
off-state voltage
Off-state current
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85V
kV/µs
µA
DRM
I
V
= ±50 V
D
±10
108
74
74
40
D
f = 100 kHz, V = 1 V r.m.s., V = 0,
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
63
43
44
25
15
11
d
D
C
Off-state capacitance
pF
off
f = 100 kHz, V = 1 V r.m.s., V = -50 V
d
D
25
20
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
EIA/JESD51-3 PCB mounted in an EIA/
JESD51-2 enclosure
RΘ
Junction to free air thermal resistance
120
°C/W
JA
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxF3LM Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
Switching
ITSP
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
IDRM
ID
VDRM
VD
+v
-v
ID
VD
VDRM
IDRM
IH
I(BO)
VT
V(BO)
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
PMXXAAB
Figure 1. Voltage-Current Characteristic for R and T Terminals
All Measurements are Referenced to the T Terminal
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxF3LM Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
V
DERATING FACTOR
vs
DRM
JUNCTION TEMPERATURE
MINIMUM AMBIENT TEMPERATURE
TC4XAA
TC4XAB
1.00
0.99
0.98
0.97
0.96
0.95
100
10
'4125
THRU
'4180
'4072
AND
'4082
1
VD = 50 V
0·1
VD = -50 V
0·01
0·001
'4240
THRU
'4380
-40
-35
-30
-25
-20
-15
-10
-5
0
-25
0
25
50
75
100 125 150
TAMIN - Minimum Ambient Temperature - °C
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
NORMALIZED V
(BO)
NORMALIZED HOLDING CURRENT
vs
vs
TC4XAC
AMBIENT TEMPERATURE
JUNCTION TEMPERATURE
TC4XAD
1.1
2.0
1.5
'4072
AND
'4125
THRU
'4180
'4082
1.0
0.9
'4240
THRU
'4380
'4240
THRU
'4380
0.8
0.7
1.0
0.6
0.5
'4072
AND
'4082
0.9
0.4
50
125 150
-25
0
25
50
75
100
125
150
-25
0
25
75
100
T - Ambient Temperature - °C
A
TJ - Junction Temperature - °C
Figure 4.
Figure 5.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxF3LM Overvoltage Protector Series
Typical Characteristics
NORMALIZED BREAKOVER VOLTAGE
vs
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
RATE OF RISE OF PRINCIPLE CURRENT
TC4XAE
TC4XAF
1.3
1.2
1.1
1.0
1.3
1.2
1.1
1.0
'4072
AND
'4082
'4072
AND
'4082
POSITIVE POLARITY
NEGATIVE POLARITY
'4125
THRU
'4180
'4240
THRU
'4380
'4240
THRU
'4380
'4125
THRU
'4180
0·001
0·01
0·1
1
10
100
0·001
0·01
0·1
1
10
100
di/dt - Rate of Rise of Principal Current - A/µs
di/dt - Rate of Rise of Principal Current - A/µs
Figure 6.
Figure 7.
OFF-STATE CAPACITANCE
vs
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
TERMINAL VOLTAGE
TC4XAG
TC4XAH
100
90
80
100
90
80
POSITIVE POLARITY
NEGATIVE POLARITY
70
60
70
60
'4072
AND
'4082
'4072
AND
50
40
50
40
'4082
30
20
30
20
'4125
THRU
'4180
'4125
THRU
'4240
THRU
'4380
'4180
'4240
THRU
'4380
10
0·1
10
0·1
1
10
1
10
50
50
Terminal Voltage - V
Terminal Voltage - V
Figure 8.
Figure 9.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxF3LM Overvoltage Protector Series
Typical Characteristics
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI4LAAA
10
9
8
VGEN = 600 Vrms, 50/60 Hz
RGEN(t) = 1.4*VGEN / ITSM(t)
7
6
5
4
3
2
1
0·1
1
10
100
1000
t - Current Duration - s
Figure 10.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxF3LM Overvoltage Protector Series
MECHANICAL DATA
Device Symbolization Code
Devices will be coded as below.
Device
Symbolization Code
4072F3
TISP4072F3
TISP4082F3
TISP4125F3
TISP4150F3
TISP4180F3
TISP4240F3
TISP4260F3
TISP4290F3
TISP4320F3
TISP4380F3
4082F3
4125F3
4150F3
4180F3
4240F3
4260F3
4290F3
4320F3
4380F3
Carrier Information
Devices are shipped in one of the carriers below. A reel contains 2,000 devices.
Device
Package
Carrier
Bulk Pack
Order As
TISP4xxxF3LM-S
TISP4xxxF3LMR-S
Straight Lead DO-92 (LM)
TISP4xxxF3LM
Tape and Reeled
Formed Lead DO-92 (LMF) Tape and Reeled TISP4xxxF3LMFR-S
Insert xxx value corresponding to protection voltages of 072, 082, 125 etc.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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