TISP4C395H3BJ [BOURNS]
LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS; 低电容的双向晶闸管过电压保护
| 型号： | TISP4C395H3BJ |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 文件： | 总4页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP4C125H3BJ THRU TISP4C395H3BJ
LOW CAPACITANCE
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
VERSIONS
*RoHS COMPLIANT
AVAILABLE
TISP4CxxxH3BJ Overvoltage Protector Series
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
SMB Package (Top View)
- Low Voltage Overshoot under Surge
- Low Off-State Capacitance
R
1
2 T
VDRM
V(BO)
V
Device Name
V
TISP4C125H3BJ
TISP4C145H3BJ
TISP4C180H3BJ
TISP4C220H3BJ
TISP4C250H3BJ
100
120
145
180
190
125
145
180
220
250
MD-SMB-004-a
Device Symbol
T
TISP4C290H3BJ
TISP4C350H3BJ
TISP4C395H3BJ
220
275
320
290
350
395
Rated for International Surge Wave Shapes
IPPSM
Wave Shape
Standard
A
R
SD-TISP4xxx-001-a
2/10
GR-1089-CORE
TIA-968-A
500
200
150
100
100
10/160
10/700
10/560
10/1000
ITU-T K.20/21/45
TIA-968-A
GR-1089-CORE
....... TISP4C290H3BJ, TISP4C350H3BJ & TISP4C395H3BJ
are UL Recognized Components
Description
This device is designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash
disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the
protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
Please contact your Bourns representative if the protection voltage you require is not listed.
How to Order
For Standard
Termination Finish
Order As
For Lead Free
Termination Finish
Order As
Marking
Code
Device
Package
Carrier
Std. Qty.
TISP4CxxxH3BJ
SMB
Embossed Tape Reeled
TISP4CxxxH3BJR TISP4CxxxH3BJR-S 4CxxxH
3000
Insert xxx corresponding to device name.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 2004 – REVISED FEBRUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4CxxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
Unit
'4C125H3BJ
±100
±120
±145
±180
±190
±220
±275
±320
'4C145H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
Repetitive peak off-state voltage
VDRM
V
Non-repetitive peak impulse current (see Notes 1 and 2)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45)
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
±500
±200
±150
±100
±100
IPPSM
A
A
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
30
2.1
20 ms, 50 Hz (full sine wave)
1000 s, 50 Hz
ITSM
Junction temperature
TJ
-40 to +150
-65 to +150
°C
°C
Storage temperature range
Tstg
NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C.
2. The surge may be repeated after the device returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths.
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
Min Typ Max Unit
TA = 25 °C
A = 85 °C
±5
µA
IDRM
Repetitive peak off-state current
VD = VDRM
T
±10
'4C125H3BJ
'4C145H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
±125
±145
±180
±220
V(BO)
Breakover voltage
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
V
±250
±290
±350
±395
'4C350H3BJ
'4C395H3BJ
'4C125H3BJ
'4C145H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
±135
±155
±190
±230
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±10 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
V
V(BO)
Impulse breakover voltage
±260
±300
±360
±405
I(BO)
VT
Breakover current
On-state voltage
Holding current
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
IT = ±5 A, tw = 100 µs
±600 mA
±3
V
IH
IT = ±5 A, di/dt = ±30 mA/ms
±150
±600 mA
50
'4C125H3BJ
'4C145H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
45
pF
CO
Off-state capacitance
f = 1 MHz, Vd = 1 V rms, VD = -2 V
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
40
SEPTEMBER 2004 – REVISED FEBRUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4CxxxH3BJ Overvoltage Protector Series
Thermal Characteristics, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
Min Typ Max Unit
EIA/JESD51-3 PCB, IT = ITSM(1000)
(see Note 4)
113
°C/W
RθJA
Junction to ambient thermal resistance
265 mm x 210 mm populated linecard,
4-layer PCB, IT = ITSM(1000)
50
NOTE: 4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Parameter Measurement Information
+i
IPPSM
Quadrant I
Switching
Characteristic
ITSM
ITRM
IT
V(BO)
VT
I(BO)
IH
V(BR)
I(BR)
V(BR)M
IDRM
VDRM
VD
ID
+v
-v
ID
VD
VDRM
I(BR)
V(BR)
IDRM
V(BR)M
IH
I(BO)
VT
V(BO)
IT
ITRM
ITSM
Quadrant III
Switching
Characteristic
IPPSM
PM-TISP4xxx-001-a
-i
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
SEPTEMBER 2004 – REVISED FEBRUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4CxxxH3BJ Overvoltage Protector Series
Typical Characteristics
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
TC-TISP4C-002-a
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
TJ = 25 °C
Vd = 1 Vrms
1
10
VD - Off-state Voltage - V
100
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
SEPTEMBER 2004 – REVISED FEBRUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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