TISP4S098M3BJR-S [BOURNS]

TISP4SxxxBJ Overvoltage Protector Series;
TISP4S098M3BJR-S
型号: TISP4S098M3BJR-S
厂家: BOURNS ELECTRONIC SOLUTIONS    BOURNS ELECTRONIC SOLUTIONS
描述:

TISP4SxxxBJ Overvoltage Protector Series

文件: 总7页 (文件大小:378K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TISP4SxxxL1BJ,  
TISP4SxxxM1BJ, TISP4SxxxM3BJ,  
TISP4SxxxT3BJ  
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS  
TISP4SxxxBJ Overvoltage Protector Series  
TISP4SxxxBJ Overview  
These protection devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or  
lightning flash disturbances which are induced or conducted onto the telephone line. A single device provides 2-point protection and is  
typically used for the protection of 2-wire telecommunication equipment (e.g., between the Ring and Tip wires for telephones and modems).  
Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).  
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until  
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state. This low-voltage on-state causes  
the current resulting from the overvoltage to be safely diverted within rated limits through the device. The high crowbar holding current helps  
prevent d.c. latchup as the diverted current subsides.  
Summary Electrical Characteristics, T = 25 °C (Unless Otherwise Noted)  
A
On-State  
Voltage  
Min. I  
Off-State  
Current  
Typ. C  
@1 V,  
H
j
Max. V  
BO  
V
di/dt =  
1 A/ms  
(mA)  
Max. I  
Max. I  
(A)  
DRM  
(V)  
BO  
T
Part Number  
@ 100 V/µs  
(V)  
V
@ I  
=
T
T
(mA)  
I
@ V  
1 MHz  
(pF)  
D
DRM  
2.2 A  
(V)  
(µA)  
TISP4S040L1BJR-S  
TISP4S040M1BJR-S  
TISP4S077M3BJR-S  
TISP4S088M3BJR-S  
TISP4S098M3BJR-S  
TISP4S1ꢀ0M3BJR-S  
TISP4S180M3BJR-S  
TISP4S±40M3BJR-S  
TISP4S±ꢀ0M3BJR-S  
TISP4S300M3BJR-S  
TISP4S320M3BJR-S  
TISP4S320T3BJR-S  
TISP4S400M3BJR-S  
±±2  
±±2  
±28  
±ꢀ2  
±72  
±1±0  
±140  
±180  
±190  
±±±0  
±±72  
±±72  
±300  
± 40  
± 40  
20  
20  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
100  
1±0  
72  
72  
72  
22  
22  
42  
42  
42  
42  
42  
42  
± 77  
120  
120  
120  
120  
120  
120  
120  
120  
120  
120  
120  
± 88  
± 98  
± 1ꢀ0  
± 180  
± ±40  
± ±ꢀ0  
± 300  
± 320  
± 320  
± 400  
SMBJ Package (Top View)  
Device Symbol  
T
1
2
R(B)  
T(A)  
MDXXBG  
SD4XAA  
R
...........................................................................UL Pending  
Terminals T and R correspond to the  
alternative line designators of A and B  
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
JUNE 2012  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP4SxxxBJ Overvoltage Protector Series  
How to Order  
Device  
TISP4SxxxyzBJ  
Package  
BJ (J-Bend DO-214AA/SMB)  
Carrier  
Embossed Tape Reeled  
Order As  
TISP4SxxxyzBJR-S  
Insert xxx value corresponding to protection voltages.  
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)  
A
Parameter  
Symbol  
Value  
Unit  
TISP4S040L1BJR-S  
TISP4S040M1BJR-S  
TISP4S077M3BJR-S  
TISP4S088M3BJR-S  
TISP4S098M3BJR-S  
TISP4S160M3BJR-S  
TISP4S180M3BJR-S  
TISP4S240M3BJR-S  
TISP4S260M3BJR-S  
TISP4S300M3BJR-S  
TISP4S350M3BJR-S  
TISP4S350T3BJR-S  
TISP4S400M3BJR-S  
25  
25  
58  
65  
75  
120  
140  
180  
190  
220  
275  
275  
300  
Repetitive peak off-state voltage  
V
V
DRM  
Non-repetitive peak on-state pulse current  
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)  
TISP4SxxxLyBJR-S  
I
30  
50  
80  
A
TSP  
TISP4SxxxMyBJR-S  
TISP4SxxxT3BJR-S  
Operating Temperature  
Storage Temperature  
T
-40 to +150  
-55 to +150  
°C  
°C  
J
T
STG  
Thermal Characteristics, T = 25 °C (Unless Otherwise Noted)  
A
Parameter  
Test Conditions  
EIA/JESD51-3 PCB, I = I  
Min.  
Nom. Max.  
115  
Unit  
(1000),  
TSM  
T
RΘJA Junction to free air thermal resistance  
°C/W  
T
= 25 °C  
A
JUNE 2012  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP4SxxxBJ Overvoltage Protector Series  
Parameter Measurement Information  
+i  
Quadrant I  
Switching  
ITSP  
Characteristic  
ITSM  
IT  
V(BO)  
VT  
I(BO)  
+v  
IH  
IDRM  
ID  
VDRM  
VD  
-v  
ID  
VD  
VDRM  
IDRM  
IH  
I(BO)  
VT  
V(BO)  
IT  
ITSM  
Quadrant III  
ITSP  
Switching  
Characteristic  
-i  
PMXXAAB  
Figure 1. Voltage-current Characteristic for T and R Terminals  
All Measurements are Referenced to the R Terminal  
Typical Characteristics  
NORMALIZED BREAKOVER VOLTAGE  
NORMALIZED HOLDING CURRENT  
vs  
vs  
JUNCTION TEMPERATURE  
JUNCTION TEMPERATURE  
1.20  
1.15  
1.10  
1.05  
1.4  
1.3  
1.2  
1.1  
1.0  
V
(T )  
J
BR  
V
(T = 25 °C)  
J
BR  
0.9  
0.8  
0.7  
I
(T )  
J
H
1.00  
0.95  
I
(T = 25 °C)  
J
H
0.6  
0.5  
0.4  
0.90  
0.3  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
-50  
-25  
0
25  
50  
75  
100  
125  
T , Junction Temperature (°C)  
J
T , Junction Temperature (°C)  
J
JUNE 2012  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP4SxxxBJ Overvoltage Protector Series  
Typical Characteristics  
NORMALIZED CAPACITANCE  
vs  
REVERSE VOLTAGE  
PEAK PULSE CURVE  
1
Test Waveform Example  
t
f
t = 10 µs  
f
t
= 1000 µs  
100  
50  
0
d
Peak Value  
C
(VR)  
O
C
(VR = 1 V)  
O
T = 25 °C  
J
f = 1 MHz  
10  
V
= 1 V  
RMS  
Half Value: I / 2 = t  
PP  
d
-t  
e
0.1  
1
10  
100  
0
1000  
2000  
3000  
V , Reverse Voltage  
R
t - Time (µs)  
Excludes TISP4S040x1BJ devices as these are only rated up to 25 V.  
Device Symbolization Code  
OFF-STATE CURRENT  
vs  
Devices will be coded as below. As the device parameters are sym-  
metrical, terminal 1 is not identified.  
JUNCTION TEMPERATURE  
100  
10  
Symbolization  
Device  
Code  
TISP4S040L1BJR-S  
TISP4S040M1BJR-S  
TISP4S077M3BJR-S  
TISP4S088M3BJR-S  
TISP4S098M3BJR-S  
TISP4S160M3BJR-S  
TISP4S180M3BJR-S  
TISP4S240M3BJR-S  
TISP4S260M3BJR-S  
TISP4S300M3BJR-S  
TISP4S350M3BJR-S  
TISP4S350T3BJR-S  
TISP4S400M3BJR-S  
KBL  
GBL  
GCL  
GDL  
GEL  
GGL  
GHL  
GIL  
GJL  
GKL  
GLL  
GYL  
GML  
V
= 50 V  
DRM  
1.0  
0.1  
0.01  
0.001  
-25  
0
25  
50  
75  
100  
125  
150  
T , Junction Temperature (°C)  
J
Excludes TISP4S040x1BJ devices as these devices cannot be operated at 50 V.  
JUNE 2012  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP4SxxxBJ Overvoltage Protector Series  
Typical Applications  
MODEM  
TIP  
RING  
WIRE  
FUSE  
R1a  
RING DETECTOR  
Th3  
Th2  
PROTECTED  
EQUIPMENT  
HOOK SWITCH  
Th1  
R1b  
D.C. SINK  
E.G. LINE CARD  
TISP4350  
SIGNAL  
RING  
AI6XBK  
TIP  
WIRE  
AI6XBMA  
Modem Inter-wire Protection  
Protection Module  
R1a  
Th3  
SIGNAL  
Th1  
Th2  
R1b  
AI6XBL  
D.C.  
ISDN Protection  
OVER-  
SLIC  
RING/TEST  
TEST  
RING  
RELAY  
SLIC  
CURRENT  
PROTECTION  
PROTECTION  
RELAY  
RELAY  
PROTECTION  
TIP  
WIRE  
S3a  
R1a  
Th4  
Th3  
S1a  
S2a  
SLIC  
Th1  
Th2  
Th5  
R1b  
RING  
WIRE  
S3b  
TISP6xxxx,  
TISPPBLx,  
S1b  
S2b  
1/2TISP6NTP2  
VBAT  
C1  
220 nF  
TEST  
EQUIP-  
MENT  
RING  
GENERATOR  
AI6XBJ  
Line Card Ring/Test Protection  
JUNE 2012  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP4SxxxBJ Overvoltage Protector Series  
Package Outline Dimensions  
This surface mount two terminal package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The  
compound is designed to withstand normal soldering temperatures with no deformation and circuit performance characteristics will remain  
stable when operated in most high humidity conditions. Terminals require no additional cleaning or processing when used in soldered  
assembly.  
SMB (DO-214AA) Package  
4.06 - 4.57  
(0.160 - 0.180)  
0.152 - 0.305  
(0.006 - 0.012)  
2.13 - 2.44  
(0.084 - 0.096)  
1.95 - 2.20  
(0.077 - 0.086)  
3.30 - 3.94  
(0.130 - 0.155)  
0.203  
(0.008)  
MAX.  
0.76 - 1.52  
(0.030 - 0.060)  
5.21 - 5.59  
(0.220 - 0.205)  
MILLIMETERS  
(INCHES)  
DIMENSIONS ARE :  
Recommended Printed Wiring Land Pattern Dimensions  
SMB (DO-214AA) Land Pattern  
2.54  
(.100)  
2.40  
(0.095)  
2.16  
(0.085)  
JUNE 2012  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP4SxxxBJ Overvoltage Protector Series  
Tape & Reel Dimensions  
The product will be dispensed in tape and reel format (see diagram below).  
P
0
P
T
E
1
d
Index Hole  
Pin 1  
Location  
120 °  
F
D
2
W
B
D
D
1
P
A
C
Trailer  
Device  
Leader  
W
.......  
.......  
.......  
.......  
.......  
.......  
.......  
.......  
1
End  
Start  
MM  
(INCHES)  
DIMENSIONS:  
10 pitches (min.)  
10 pitches (min.)  
Devices are packed in accordance with EIA 481  
standard specifications shown here.  
Direction of Feed  
Item  
Carrier Width  
Symbol  
SMB (DO-214AA)  
4.94 ꢀ.1ꢀ  
A
(ꢀ.194 - ꢀ.ꢀꢀ4)  
5.57 ꢀ.1ꢀ  
Carrier Length  
B
C
d
(ꢀ.21ꢀ ꢀ.ꢀꢀ4)  
2.36 ꢀ.1ꢀ  
Carrier Depth  
(ꢀ.ꢀ93 ꢀ.ꢀꢀ4)  
1.55 ꢀ.ꢀ5  
Sprocket Hole  
(ꢀ.ꢀ61 ꢀ.ꢀꢀ2)  
33ꢀ  
Reel Outside Diameter  
Reel Inner Diameter  
Feed Hole Diameter  
Sprocket Hole Position  
Punch Hole Position  
Punch Hole Pitch  
Sprocket Hole Pitch  
Embossment Center  
Overall Tape Thickness  
Tape Width  
D
(12.992)  
5ꢀ.ꢀ  
D
D
MIN.  
1
(1.969)  
13.ꢀ ꢀ.2ꢀ  
2
(ꢀ.512 ꢀ.ꢀꢀ8)  
1.75 ꢀ.1ꢀ  
E
(ꢀ.ꢀ69 ꢀ.ꢀꢀ4)  
5.5ꢀ ꢀ.ꢀ5  
F
P
(ꢀ.217 ꢀ.ꢀꢀ2)  
4.ꢀꢀ ꢀ.1ꢀ  
(ꢀ.157 ꢀ.ꢀꢀ4)  
Asia-Pacific:  
Tel: +886-2 2562-4117  
Fax: +886-2 2562-4116  
4.ꢀꢀ ꢀ.1ꢀ  
P
1
(ꢀ.157 ꢀ.ꢀꢀ4)  
2.ꢀꢀ ꢀ.ꢀ5  
P
Europe:  
Tel: +41-41 768 5555  
Fax: +41-41 768 5510  
(ꢀ.ꢀ79 ꢀ.ꢀꢀ2)  
ꢀ.3ꢀ ꢀ.1ꢀ  
T
(ꢀ.ꢀ12 ꢀ.ꢀꢀ4)  
12.ꢀꢀ ꢀ.2ꢀ  
W
The Americas:  
Tel: +1-951 781-5500  
Fax: +1-951 781-5700  
(ꢀ.472 ꢀ.ꢀꢀ8)  
18.4  
Reel Width  
W
1
--  
MAX.  
(ꢀ.724)  
Quantity per Reel  
3,ꢀꢀꢀ  
www.bourns.com  
“TISP” is a registered trademark of Bourns Ltd., a Bourns Company, in the United States and other countries, except that “TISP” is a registered trademark of Bourns, Inc. in China.  
“Bourns” is a registered trademark of Bourns, Inc. in the United States and other countries.  
JUNE 2012  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

相关型号:

TISP4S160M3BJR-S

TISP4SxxxBJ Overvoltage Protector Series
BOURNS

TISP4S180M3BJR-S

TISP4SxxxBJ Overvoltage Protector Series
BOURNS

TISP4S240M3BJR-S

TISP4SxxxBJ Overvoltage Protector Series
BOURNS

TISP4S260M3BJR-S

TISP4SxxxBJ Overvoltage Protector Series
BOURNS

TISP4S300M3BJR-S

TISP4SxxxBJ Overvoltage Protector Series
BOURNS

TISP4S350M3BJR-S

TISP4SxxxBJ Overvoltage Protector Series
BOURNS

TISP4S350T3BJR-S

TISP4SxxxBJ Overvoltage Protector Series
BOURNS

TISP4S400M3BJR-S

TISP4SxxxBJ Overvoltage Protector Series
BOURNS

TISP4X00F3

HIGH VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
BOURNS

TISP4XX0T3BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
BOURNS

TISP4XXXF3LM

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
BOURNS

TISP4XXXH3BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
BOURNS