BA-12Y3UD [BRTLED]

yellow chips, which are made from GaAsP on GaP substrate.; 黄色的芯片,这是对的GaP衬底制成的砷化镓。
BA-12Y3UD
型号: BA-12Y3UD
厂家: BRTLED    BRTLED
描述:

yellow chips, which are made from GaAsP on GaP substrate.
黄色的芯片,这是对的GaP衬底制成的砷化镓。

光电
文件: 总3页 (文件大小:158K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BA-12Y3UD  
Package Dimensions :  
Features :  
1. Emitting area : 4.0×1.5×12mm)  
2. Low power requirement.  
4.30x11=47.30(1.862)  
4.00(.157)  
1.60(.063)  
3. Excellent characters appearance.  
4. Solid state reliability.  
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
56.00(2.205)  
58.00(2.283)  
0.50(.020)  
8.00(.315)  
5. Categorized for luminous intensity.  
6. Universal pin out.  
0.50  
(.020)  
3.00(.118) MIN.  
2.54x20=50.80(2.00)  
Description :  
1. The BA-12Y3UD is 12 bar graph  
array display.  
Notes:  
1. All dimensions are in millimeters(inches).  
2. Tolerance is ±0.25mm(.01")unless otherwise  
2. This product use yellow chips, which are  
made from GaAsP on GaP substrate.  
3. This product have a black face and  
white segments.  
specified.  
3. Specifications are subject to change without  
notice.  
4. This product doesn't contain restriction  
substance, comply ROHS standard.  
Internal Circuit Diagram :  
佰鴻工業股份有限公司  
http://www.brtled.com  
Ver.1.0 Page 1 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BA-12Y3UD  
Absolute Maximum Ratings(Ta=25)  
Parameter  
Symbol  
Rating  
Unit  
mW  
mA  
mA  
V
Power Dissipation Per Segment  
Forward Current Per Segment  
Peak Forward Current Per Segment  
Pd  
80  
IF  
30  
150  
IFP  
(Duty 1/10, 1KHZ)  
Reverse Voltage Per Segment  
Operating Temperature  
Storage Temperature  
VR  
5
-40~80℃  
-40~85℃  
260For 5 Seconds  
Topr  
Tstg  
Tsol  
-
-
Soldering Temperature  
(1/16" From Body)  
-
Electrical And Optical Characteristics(Ta=25)  
Parameter  
Symbol Condition Min.  
Typ.  
2.0  
Max.  
2.5  
-
Unit  
V
Forward Voltage Per Segment  
Luminous Intensity Per Segment  
Vf  
Iv  
IF=10mA  
IF=10mA  
-
-
3.5  
mcd  
µA  
佰鴻工業股份有限公司  
Reverse Current Per Segment  
IR  
VR=5V  
-
-
-
100  
λp  
Peak Wave Lenghth ttp://www.brtled.com  
IF=10mA  
589  
-
594  
-
nm  
nm  
nm  
λd  
λ  
Dominant Wave Length  
Spectral Line Half-width  
IF=10mA  
IF=10mA  
586  
-
-
35  
Ver.1.0 Page 2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BA-12Y3UD  
Typical Electro-Optical Characteristics Curves  
(25Ambient Temperature Unless Otherwise Noted)  
Fig.1 Relative Radiant Intensity VS. Wavelength  
1.0  
0.5  
0
500  
530  
560  
590  
620  
650  
680  
Wavelength(nm)  
Fig.3 Relative Luminous  
Intensity VS.  
Fig.2 Forward Current VS.  
Forward Voltage  
Ambient Temperature  
50  
40  
30  
20  
10  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
-40 -20  
0
20  
40  
60  
1
2
3
4
5
Ambient Temperature Ta( C)  
Forward Voltage (V)  
Fig.4 Relative Luminous  
Intensity VS.  
Fig.5 Forward Current  
Derating Curve VS.  
Ambient Temperature  
Forward Current  
50  
3.0  
2.0  
40  
30  
佰鴻工業股份有限公司  
10  
20  
1.0  
http://www.brtled.com  
0
0
20 40 60 80 100 120  
10  
20  
30  
40  
50  
Forward Current(mA)  
Ambient Temperature Ta( C)  
Ver.1.0 Page 3 of 3  

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