BA-3S12UW [BRTLED]

red chips, which are made from GaAlAs on GaAs substrate.; 红筹,这是从GaAs衬底的GaAlAs制成。
BA-3S12UW
型号: BA-3S12UW
厂家: BRTLED    BRTLED
描述:

red chips, which are made from GaAlAs on GaAs substrate.
红筹,这是从GaAs衬底的GaAlAs制成。

光电
文件: 总3页 (文件大小:147K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BA-3S12UW  
Package Dimensions :  
Features :  
1. Emitting area : 18.78×5.85mm)  
2. Low power requirement.  
3. Excellent characters appearance.  
4. Solid state reliability.  
5. Categorized for luminous intensity.  
Description :  
1. The BA-3S12UW have uniform emitting  
light.  
2. This product use super red chips, which  
are made from GaAlAs on GaAs  
substrate..  
Notes:  
1. All dimensions are in millimeters(inches).  
2. Tolerance is ±0.25mm(.01")unless otherwise  
specified.  
3. This product have a white face and  
white segments.  
3. Specifications are subject to change without  
notice.  
4.  
This product doesn't contain restriction  
substance, comply ROHS standard.  
Internal Circuit Diagram :  
Ver.2.0 Page 1 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BA-3S12UW  
Absolute Maximum Ratings(Ta=25)  
Parameter  
Symbol  
Rating  
Unit  
mW  
mA  
mA  
V
Power Dissipation Per Segment  
Forward Current Per Segment  
Peak Forward Current Per Segment  
Pd  
80  
IF  
15  
IFP  
50  
5
(Duty 1/10, 1KHZ)  
Reverse Voltage Per Segment  
Operating Temperature  
Storage Temperature  
VR  
-40~80℃  
-40~85℃  
260For 5 Seconds  
Topr  
Tstg  
Tsol  
-
-
Soldering Temperature  
(1/16" From Body)  
-
Electrical And Optical Characteristics(Ta=25)  
Parameter  
Forward Voltage Per Segment  
Luminous Intensity Per Segment  
Reverse Current Per Segment  
Peak Wave Length  
Symbol Condition Min.  
Typ.  
1.7  
12.0  
-
Max.  
Unit  
V
Vf  
Iv  
IF=10mA  
IF=10mA  
VR=5V  
-
2.5  
-
-
100  
-
mcd  
µA  
IR  
-
λp  
λd  
λ  
IF=10mA  
IF=10mA  
IF=10mA  
-
638  
-
660  
nm  
nm  
nm  
Dominant Wave Length  
648  
-
Spectral Line Half-width  
20  
Ver.2.0 Page 2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BA-3S12UW  
Typical Electro-Optical Characteristics Curves  
(25Ambient Temperature Unless Otherwise Noted)  
Fig.1 Relative Radiant Intensity VS. Wavelength  
1.0  
0.5  
0
540  
570  
600  
630  
660  
690  
720  
Wavelength(nm)  
Fig.3 Relative Luminous  
Intensity VS.  
Fig.2 Forward Current VS.  
Forward Voltage  
Ambient Temperature  
50  
40  
30  
20  
10  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
1
2
3
4
5
-40 -20  
0
20  
40  
60  
Ambient Temperature Ta( C)  
Forward Voltage (V)  
Fig.4 Relative Luminous  
Intensity VS.  
Fig.5 Forward Current  
Derating Curve VS.  
Ambient Temperature  
Forward Current  
50  
2.0  
40  
30  
20  
1.5  
1.0  
0.5  
0
10  
0
20 40 60 80 100 120  
10  
20  
30  
40  
50  
Forward Current(mA)  
Ambient Temperature Ta( C)  
Ver.2.0 Page 3 of 3  

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