BA-8E9UW [BRTLED]
hi-eff red chips, which are made from GaAsP on GaP substrate; HI- EFF红筹股，这是对的GaP衬底制成的磷砷化镓
| 型号： | BA-8E9UW |
| 厂家： | 
BRTLED |
| 描述： | hi-eff red chips, which are made from GaAsP on GaP substrate |
| 文件： | 总3页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BA-8E9UW
●
Package Dimensions :
●
Features :
1. Emitting area : 31.0×20.0（mm）.
2. Low power requirement.
3. Excellent characters appearance.
4. Solid state reliability.
5. Categorized for luminous intensity.
●
Description :
1. The BA-8E9UW had uniform emitting
light.
2. This product use hi-eff red chips, which
are made from GaAsP on GaP substrate.
3. This product have a white face and
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
white segments.
4. This product doesn't contain restriction
3. Specifications are subject to change without
notice.
substance, comply ROHS standard.
● Internal Circuit Diagram :
佰鴻工業股份有限公司
http://www.brtled.com
Ver.1Page 1 of 3
1.1
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BA-8E9UW
● Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Rating
Unit
mW
mA
mA
V
Power Dissipation Per Segment
Forward Current Per Segment
Peak Forward Current Per Segment
Pd
320
IF
30
150
IFP
(Duty 1/10, 1KHZ)
VR
Reverse Voltage Per Segment
Operating Temperature
Storage Temperature
5
-40℃~80℃
-40℃~85℃
260℃ For 5 Seconds
Topr
Tstg
Tsol
-
-
Soldering Temperature
(1/16" From Body)
-
● Electrical And Optical Characteristics(Ta=25℃)
Parameter
Symbol Condition Min.
Typ.
7.6
8.0
-
Max.
Unit
V
Forward Voltage Per Segment
Luminous Intensity Per Segment
Reverse Current Per Segment
Peak Wave Length
Vf
Iv
IF=10mA
IF=10mA
VR=5V
-
-
-
-
-
10.0
-
mcd
µA
IR
100
λp
λd
IF=10mA
IF=10mA
635
630
-
-
nm
nm
nm
Dominant Wave Length
佰鴻工業股份有限公司
∆λ
Spectral Line Half-width
IF=10mA
-
45
-
http://www.brtled.com
Ver.1.0 Page 2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BA-8E9UW
● Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength
1.0
0.5
0
560
590
620
650
680
710
740
Wavelength(nm)
Fig.3 Relative Luminous
Intensity VS.
Fig.2 Forward Current VS.
Forward Voltage
Ambient Temperature
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
1
2
3
4
5
-40 -20
0
20
40
60
Ambient Temperature Ta( C)
Forward Voltage (V)
Fig.4 Relative Luminous
Intensity VS.
Fig.5 Forward Current
Derating Curve VS.
Ambient Temperature
Forward Current
50
40
2.0
1.5
佰鴻工業股份有限公司
30
1.0
20
http://www.brtled.com
0.5
10
0
0
20 40 60 80 100 120
Ambient Temperature Ta( C)
10
20
30
40
50
Forward Current(mA)
Ver.1.0 Page 3 of 3
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