BD-E405RD [BRTLED]

bright red chips, which are made from GaP on GaP substrate; 鲜红的芯片,这是对的GaP衬底制成来自Gap
BD-E405RD
型号: BD-E405RD
厂家: BRTLED    BRTLED
描述:

bright red chips, which are made from GaP on GaP substrate
鲜红的芯片,这是对的GaP衬底制成来自Gap

文件: 总3页 (文件大小:245K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BD-E405RD  
Package Dimensions :  
Features :  
1. 0.40 inch (10.16mm) Digit Height.  
2. Continuous uniform segments.  
3. Low power requirement.  
5.90(.232)  
10  
10.16(.400)  
16.00(.630)  
12.70(.500)  
4. Excellent characters appearance.  
5. Solid state reliability.  
1.3(.051)  
20.20(.795)  
6. Categorized for luminous intensity.  
7. Duplex drive common anode.  
6.90(.272)  
0.50(.020)  
Description :  
3.00(.118) MIN.  
2.54(.100)  
1. The BD-E405RD is a 10.16mm(0.40")  
high dual digit seven segments display.  
2. This product use bright red chips, which  
are made from GaP on GaP substrate.  
3. This product have a black face and  
white segments.  
Notes:  
1. All dimensions are in millimeters(inches).  
2. Tolerance is ±0.25mm(.01")unless otherwise  
specified.  
3. Specifications are subject to change without  
notice.  
4. This product doesn't contain restriction  
substance, comply ROHS standard.  
Internal Circuit Diagram :  
佰鴻工業股份有限公司  
http://www.brtled.com  
Ver.1.0 Page 1 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BD-E405RD  
Absolute Maximum Ratings(Ta=25)  
Parameter  
Symbol  
Rating  
Unit  
mW  
mA  
mA  
V
Power Dissipation Per Segment  
Forward Current Per Segment  
Peak Forward Current Per Segment  
Pd  
40  
IF  
15  
IFP  
50  
5
(Duty 1/10, 1KHZ)  
VR  
Reverse Voltage Per Segment  
Operating Temperature  
Storage Temperature  
-40~80℃  
-40~85℃  
260For 5 Seconds  
Topr  
Tstg  
Tsol  
-
-
Soldering Temperature  
(1/16" From Body)  
-
Electrical And Optical Characteristics(Ta=25)  
Parameter  
Symbol Condition Min.  
Typ.  
2.1  
1.5  
-
Max.  
Unit  
V
Forward Voltage Per Segment  
Luminous Intensity Per Segment  
Reverse Current Per Segment  
Peak Wave Length  
Vf  
Iv  
IF=10mA  
IF=10mA  
VR=5V  
-
-
-
-
-
2.5  
-
mcd  
µA  
IR  
100  
λp  
λd  
IF=10mA  
IF=10mA  
700  
650  
-
-
nm  
nm  
nm  
Dominant Wave Length  
佰鴻工業股份有限公司  
λ  
Spectral Line Half-width  
IF=10mA  
-
100  
-
http://www.brtled.com  
Ver.1.0 Page 2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BD-E405RD  
Typical Electro-Optical Characteristics Curves  
(25Ambient Temperature Unless Otherwise Noted)  
Fig.1 Relative Radiant Intensity VS. Wavelength  
1.0  
0.5  
0
550  
600  
650  
700  
750  
800  
850  
Wavelength(nm)  
Fig.3 Relative Luminous  
Intensity VS.  
Fig.2 Forward Current VS.  
Forward Voltage  
Ambient Temperature  
50  
40  
30  
20  
10  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0
1
2
3
4
5
-40 -20  
0
20  
40  
60  
Ambient Temperature Ta( C)  
Forward Voltage (V)  
Fig.4 Relative Luminous  
Intensity VS.  
Fig.5 Forward Current  
Derating Curve VS.  
Ambient Temperature  
Forward Current  
25  
20  
3.0  
佰鴻工業股份有限公司  
2.0  
15  
10  
http://www.brtled.com  
1.0  
5
0
0.0  
0
20 40 60 80 100 120  
0
10  
20  
30  
40  
50  
Ambient Temperature Ta( C)  
Forward Current(mA)  
Ver.1.0 Page 3 of 3  

相关型号:

BD-E405RE

DUAL DIGIT LED DISPLAYS
ETC

BD-E406RD

super red chips which are made from AlGaAs on GaAs substrate.
BRTLED

BD-E40DRD

super red chips, which are made from AlGaAs on GaAs substrate
BRTLED

BD-E412RD

DUAL DIGIT LED DISPLAYS
YSTONE

BD-E412RD

green chips, which are made from GaP on GaP substrate
BRTLED

BD-E413RD

DUAL DIGIT LED DISPLAYS
YSTONE

BD-E414RD

DUAL DIGIT LED DISPLAYS
YSTONE

BD-E415RE

DUAL DIGIT LED DISPLAYS
YSTONE

BD-E416RD

DUAL DIGIT LED DISPLAYS
YSTONE

BD-E41DRD

DUAL DIGIT LED DISPLAYS
YSTONE

BD-E501RD

DUAL DIGIT LED DISPLAYS
YSTONE

BD-E501RD-A

DUAL DIGIT LED DISPLAYS
YSTONE