BL-PDB-JJS-C10 [BRTLED]
High brightness surface mount LED; 高亮度表面贴装LED
| 型号： | BL-PDB-JJS-C10 |
| 厂家： | 
BRTLED |
| 描述： | High brightness surface mount LED |
| 文件： | 总6页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AMERICAN BRIGHT OPTOELECTRONICS CORP.
GaN BL-PDx-JJx Series
•
•
Feature:
1. High brightness surface mount LED.
2. Based on GaN technology.
3. 120° viewing angle.
4. Small package outline (LxWxH) of 2.8 x 3.2 x 1.8 mm.
5. Qualified according to JEDEC moisture sensitivity Level 2.
6. Compatible to both IR reflow soldering and TTW soldering.
Package Dimension:
Solder Pad Design
V.2 Page: 1 of 6
AMERICAN BRIGHT OPTOELECTRONICS CORP.
GaN BL-PDx-JJx Series
•
Optical Characteristics:
Part Number
Chip Technology / Viewing Luminous Intensity @ If = 20mA
Color
Angle Iv ( mcd )
7.2 … 18.0
BL-PDB-JJS-C10
GaN /
120
7.2 … 9.0
9.0 … 11.2
11.2 … 14.0
14.0 … 18.0
•
•
•
•
BIN K1
BIN K2
BIN L1
BIN L2
Blue, 466 nm
BL-PDW-JJD-C10
GaN /
White
120
28.5 … 71.5
•
•
•
•
BIN N1
BIN N2
BIN P1
BIN P2
28.5 … 35.5
35.5 … 45.0
45.0 … 56.0
56.0 … 71.5
NOTE:
1. Other luminous intensity groups are also available upon request.
2. Luminous intensity is measured with an accuracy of ±11%.
3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one
wavelength group is allowed for each reel.
4. An optional Vf binning is also available upon request. Binning scheme is as per following
table.
•
Absolute Maximum Ratings:
Parameter
Maximum Value
Unit
mA
DC forward current.
20
200
4.55
mA
V
Peak pulse current; (tp ≤ 10 µs, Duty cycle = 0.005)
Forward voltage (IF=20mA)
Reverse voltage (IR=10 µA)
LED junction temperature.
5
V
125
°C
Operating temperature.
-40 … +100
-40 … +100
85
°C
Storage temperature.
°C
Power dissipation ( at room temperature )
mW
V.2 Page: 2 of 6
AMERICAN BRIGHT OPTOELECTRONICS CORP.
GaN BL-PDx-JJx Series
•
•
Vf Binning:
Vf Bin @ 20mA
Forward voltage (V)
3.65 … 4.55
Standard
02
03
04
3.65 … 3.95
3.95 … 4.25
4.25 … 4.55
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
BL-PDW, White Color Grouping
GaN White Bin Structure
0.5
0.48
0.46
0.44
0.42
0.4
0.38
0.36
0.34
0.32
0.3
Y2
Y1
X2
X1
0.28
0.26
0.24
0.22
0.2
0.25 0.26 0.27 0.28 0.29 0.3 0.31 0.32 0.33 0.34 0.35 0.36 0.37
Bin
X1
1
2
3
4
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
0.303
0.307
0.315
0.328
0.328
0.349
0.340
0.369
0.315
0.328
0.328
0.349
0.34
0.369
0.353
0.39
0.315
0.363
0.328
0.384
0.34
0.404
0.353
0.425
0.303
0.342
0.315
0.363
0.328
0.384
0.340
0.404
X2
Y1
Y2
Color coordinate is measured with an accuracy of ±0.01
V.2 Page: 3 of 6
AMERICAN BRIGHT OPTOELECTRONICS CORP.
GaN BL-PDx-JJx Series
•
Typical electro-optical characteristics curves:
Fig. 1 Relative luminous intensity vs. forward current.
Fig. 2 Forward current vs. forward voltage.
Forward Current (mA) vs. Forward Voltage
(GaN:Blue)
Intensity vs. DC Forward Current
35
30
25
20
15
10
5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
FORWARD CURRENT (mA)
Forward Voltage (V)
Fig. 3 Radiation pattern.
Fig. 4 Maximum forward current vs. temperature.
30°
20°
10°
0°
1.0
25
20
15
10
5
40°
50°
0.8
0.6
0.4
0.2
60°
70°
0
0
10
20
30
40
50
60
70
80
90
100
80°
90°
Ambient Temperature
0
Fig. 5 Relative Intensity vs. Wavelength
Relative Spectral Emission
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
400
450
500
550
600
650
700
Wavelength (nm)
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AMERICAN BRIGHT OPTOELECTRONICS CORP.
GaN BL-PDx-JJx Series
Fig. 6 Recommended IR-reflow Soldering Profile.
Fig. 7 Recommended TTW Soldering Profile.
V.2 Page: 5 of 6
AMERICAN BRIGHT OPTOELECTRONICS CORP.
GaN BL-PDx-JJx Series
•
Taping And Orientation.
Reels come in quantity of 8000 units or 2000 units.
Reel diameters are 330 mm and 180 mm respectively.
V.2 Page: 6 of 6
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