BL-PWB-SJS-C20 [BRTLED]
Power DOMILED InGan High brightness surface mount LED.; 电源DOMILED的InGaN高亮度表面贴装LED 。
| 型号： | BL-PWB-SJS-C20 |
| 厂家： | 
BRTLED |
| 描述： | Power DOMILED InGan High brightness surface mount LED. |
| 文件： | 总8页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AMERICAN BRIGHT OPTOELECTRONICS CORP.
Power DOMILED InGan BL-PWx-xJS Series
•
Feature:
1. High brightness surface mount LED.
2. 120° viewing angle.
3. Small package outline (LxWxH) of 2.8 x 3.2 x 1.8 mm.
4. Qualified according to JEDEC moisture sensitivity Level 2.
5. Compatible to both IR reflow soldering and TTW soldering.
•
Package Dimension:
Recommended Solder Pad
V.5 Page: 1 of 8
AMERICAN BRIGHT OPTOELECTRONICS CORP.
Power DOMILED InGan BL-PWx-xJS Series
•
Optical Characteristics:
Part Number
Chip Technology
Color
Viewing Luminous Intensity @ If @ 30mA
Angle
Iv ( mcd )
90.0 … 180.0
BL-PWB-SJS-C20
InGaN /
120
90.0 … 112.5
112.5 … 140.0
140.0 … 180.0
•
•
•
BIN Q2
BIN R1
BIN R2
Blue, 470 nm
BL-PWB-SJS-C10
112.5 … 224.0
•
•
•
BIN R1
BIN R2
BIN S1
112.5 … 140.0
140.0 … 180.0
180.0 … 224.0
140.0 … 285.0
BL-PWB-UJS-C10
140.0 … 180.0
180.0 … 224.0
224.0 … 285.0
•
•
•
BIN R2
BIN S1
BIN S2
BL-PWC-CJS-C10
180.0 … 450.0
InGaN /
120
•
•
•
•
BIN S1
BIN S2
BIN T1
BIN T2
180.0 … 224.0
224.0 … 285.0
285.0 … 355.0
355.0 … 450.0
Cyan, 505nm
BL-PWC-SJS-C10
285.0 … 715.0
•
•
•
•
BIN T1
BIN T2
BIN U1
BIN U2
285.0 … 355.0
355.0 … 450.0
450.0 … 560.0
560.0 … 715.0
BL-PWC-SJS-C20
450.0 … 1125.0
•
•
•
•
BIN U1
BIN U2
BIN V1
BIN V2
450.0 … 560.0
560.0 … 715.0
715.0 … 900.0
900.0 … 1125.0
BL-PWC-UJS-C10
450.0 … 1125.0
•
•
•
•
BIN U1
BIN U2
BIN V1
BIN V2
450.0 … 560.0
560.0 … 715.0
715.0 … 900.0
900.0 … 1125.0
V.5 Page: 2 of 8
AMERICAN BRIGHT OPTOELECTRONICS CORP.
Power DOMILED InGan BL-PWx-xJS Series
•
Optical Characteristics:
Part Number
Chip Technology
Color
Viewing Luminous Intensity @ If @ 30mA
Angle
Iv ( mcd )
180.0 … 450.0
BL-PWT-CJS-C10
InGaN /
120
•
•
•
•
BIN S1
BIN S2
BIN T1
BIN T2
180.0 … 224.0
224.0 … 285.0
285.0 … 355.0
355.0 … 450.0
True Green, 525nm
BL-PWT-SJS-C10
285.0 … 715.0
•
•
•
•
BIN T1
BIN T2
BIN U1
BIN U2
285.0 … 355.0
355.0 … 450.0
450.0 … 560.0
560.0 … 715.0
BL-PWT-SJS-C20
450.0 … 1125.0
•
•
•
•
BIN U1
BIN U2
BIN V1
BIN V2
450.0 … 560.0
560.0 … 715.0
715.0 … 900.0
900.0 … 1125.0
BL-PWT-UJS-C10
450.0 … 1125.0
•
•
•
•
BIN U1
BIN U2
BIN V1
BIN V2
450.0 … 560.0
560.0 … 715.0
715.0 … 900.0
900.0 … 1125.0
BL-PWW-SJD-C10
285.0 … 715.0
InGaN /
120
•
•
•
•
BIN T1
BIN T2
BIN U1
BIN U2
285.0 … 355.0
355.0 … 450.0
450.0 … 560.0
560.0 … 715.0
White (0.31, 0.31)
BL-PWW-UJD-C10
450.0 … 1125.0
•
•
•
•
BIN U1
BIN U2
BIN V1
BIN V2
450.0 … 560.0
560.0 … 715.0
715.0 … 900.0
900.0 … 1125.0
Note:
1. Other luminous intensity groups are also available upon request.
2. Luminous intensity is measured with an accuracy of ±11%.
3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength
group is allowed for each reel.
4. InGaN wavelength is very sensitive to drive current. Operating at lower current is not recommended
and may yield unpredictable performance Current pulsing should be used for dimming purposes.
5. An optional Vf binning is also available upon request. Binning scheme is as per following table.
V.5 Page: 3 of 8
AMERICAN BRIGHT OPTOELECTRONICS CORP.
Power DOMILED InGan BL-PWx-xJS Series
•
Absolute Maximum Ratings:
Parameter
Maximum Value
Unit
mA
DC forward current.
30
200
mA
V
Peak pulse current; (tp ≤ 10 µs, Duty cycle = 0.005)
Reverse voltage; Ir (max) = 10µA.
LED junction temperature.
5
125
°C
Operating temperature.
-40 … +100
-40 … +100
135
°C
Storage temperature.
°C
Power dissipation ( at room temperature )
mW
•
Vf Binning:
Vf Bin @ 30mA
Forward voltage (V)
3.9 (typical), 4.55 (max)
Standard
30
31
32
33
3.35 … 3.65
3.65 … 3.95
3.95 … 4.25
4.25 … 4.55
Forward voltage, Vf is measured with an accuracy of ±01 V.
•
Wavelength Grouping:
Color
Group
Wavelength (nm) @ 30mA
BL-PWB; Blue
Full
W
X
Y
Z
464 - 476
464 - 468
468 - 472
472 – 476
476 - 480
BL-PWC; Cyan
Full
W
X
499 - 511
499 - 503
503 - 507
507 - 511
Y
BL-PWT; True Green
Full
W
X
520- 536
520 - 524
524 - 528
528 – 532
532 – 536
Y
Z
Wavelength is measured with an accuracy of ±1 nm.
V.5 Page: 4 of 8
AMERICAN BRIGHT OPTOELECTRONICS CORP.
Power DOMILED InGan BL-PWx-xJS Series
•
BL-PWW: White Color Grouping
White Bin Structure
0.43
0.42
0.41
0.40
E3
0.39
0.38
E4
E1
0.37
0.36
E2
C3
0.35
0.34
C4
C1
0.33
0.32
C2
A3
0.31
0.30
A4
A1
A2
0.29
0.28
0.27
0.26
0.25
0.24
0.27
0.28
0.29
0.30
0.31
0.32
0.33
0.34
0.35
0.36
Chromaticity coordinate groups are measured with an accuracy of ±0.01.
Bin Bin
A1 Cx 0.2775 0.2900 0.2900 0.2775 E1 Cx
0.2732 0.2939 0.3114 0.2907 Cy
0.2775 0.2900 0.2900 0.2775 E2 Cx
0.2557 0.2764 0.2939 0.2732 Cy
0.2900 0.3025 0.3025 0.2900 E3 Cx
0.2939 0.3146 0.3321 0.3114 Cy
0.2900 0.3025 0.3025 0.2900 E4 Cx
W
X
0.3275 0.3400 0.3400 0.3275
0.3561 0.3768 0.3943 0.3736
0.3275 0.3400 0.3400 0.3275
0.3386 0.3593 0.3768 0.3561
0.3400 0.3525 0.3525 0.3400
0.3768 0.3975 0.4150 0.3943
0.3400 0.3525 0.3525 0.3400
0.3593 0.3800 0.3975 0.3768
Cy
A2 Cx
Cy
A3 Cx
Cy
A4 Cx
Cy
0.2764 0.2971 0.3146 0.2939
0.3025 0.3150 0.3150 0.3025
0.3146 0.3354 0.3529 0.3321
0.3025 0.3150 0.3150 0.3025
0.2971 0.3179 0.3354 0.3146
0.3150 0.3275 0.3275 0.3150
0.3354 0.3561 0.3736 0.3529
0.3150 0.3275 0.3275 0.3150
0.3179 0.3386 0.3561 0.3354
Cy
C1 Cx
Cy
C2 Cx
Cy
C3 Cx
Cy
C4 Cx
Cy
V.5 Page: 5 of 8
AMERICAN BRIGHT OPTOELECTRONICS CORP.
Power DOMILED InGan BL-PWx-xJS Series
•
Typical electro-optical characteristics curves:
Fig.1 Relative luminous intensity vs. forward current.
Fig.2 Forward current vs. forward voltage.
Forward Current (mA) vs. Forward Voltage
Intensity vs. DC Forward Current
1.8
60
50
40
30
20
10
0
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
1.5
2
2.5
3
3.5
4
4.5
5
FORWARD CURRENT (mA)
Forward Voltage (V)
Fig.3 Radiation pattern.
Fig.4 Maximum forward current vs. temperature.
30°
20°
10°
0°
1.0
40
35
30
25
20
15
10
5
40°
50°
0.8
0.6
MTTF > 5000 h
MTTF > 10000 h
0.4
0.2
60°
70°
80°
90°
0
0
10
20
30
40
50
60
70
80
90
100
0
Ambient Temperature
Fig.5 Relative Intensity vs Wavelength
Fig.6 Dominant Wavelength vs Forward Current
Relative Spectral Emission
Dominant Wavelength vs. Forward Current
470
540
535
530
525
520
515
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
469
468
467
466
465
464
Blue
White
Blue
True Green
True Green
400
450
500
550
600
650
700
750
800
0
10
20
30
IF (mA)
40
50
60
Wavelength (nm)
V.5 Page: 6 of 8
AMERICAN BRIGHT OPTOELECTRONICS CORP.
Power DOMILED InGan BL-PWx-xJS Series
Fig. 7 Recommended IR-reflow Soldering Profile.
Classification Reflow Profile (JEDEC J-STD-020B)
275
250
225
200
175
150
125
100
75
235-240oC
10-30s
Ramp-up
3 oC/sec
max.
183 o
C
60-150s
Ramp-down
6 oC/sec max.
Preheat
60-120s
50
360s max
100
25
0
50
150
200
Time (sec)
Fig. 8 Recommended TTW Soldering Profile.
V.5 Page: 7 of 8
AMERICAN BRIGHT OPTOELECTRONICS CORP.
Power DOMILED InGan BL-PWx-xJS Series
•
Taping And Orientation:
Reels come in quantity of 2000 units.
Reel diameter is 180 mm.
V.5 Page: 8 of 8
相关型号：
©2020 ICPDF网 联系我们和版权申明