BM-10EG88ND [BRTLED]
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.; HI- EFF红筹股和绿色芯片， HI- EFF RED芯片上的GaP衬底制成的砷化镓，绿色芯片上的GaP衬底制成的差距。
| 型号： | BM-10EG88ND |
| 厂家： | 
BRTLED |
| 描述： | hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate. |
| 文件： | 总3页 (文件大小：737K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-10EG88ND
●
Package Dimensions :
●
Features :
1. 1.26 inch (32.0mm) matrix height.
2. Dot size 3.00mm.
3. Low power requirement.
32.00(1.260)
24.00(.945)
4. Excellent characters appearance.
5. Solid state reliability.
PIN 1.
32.00(1.260)
3.0(.118)
6. Multiplex drive , column cathode com.
and row anode com.
7. Multi color available.
8.00(.315)
3.0(.118) MIN.
0.50(.020)
8. Categorized for luminous intensity.
9. Stackable vertically and horizontally.
2.54x11=27.94(1.100)
●
Description :
1. The BM-10EG88ND is a 32.0mm(1.26")
matrix height 8×8 dot matrix display.
2. This product use hi-eff red chips and green
chips, the hi-eff red chips are made from
GaAsP on GaP substrate, the green chips
are made from GaP on GaP substrate.
3. This product have a black face and
white dots.
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
4. This product doesn't contain restriction
substance, comply ROHS standard.
● Internal Circuit Diagram :
佰鴻工業股份有限公司
http://www.brtled.com
Ver. Page 1 of 3
1.1
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-10EG88ND
● Absolute Maximum Ratings(Ta=25℃)
Parameter
Power Dissipation Per Dot
Forward Current Per Dot
Peak Forward Current Per Dot
Reverse Voltage Per Dot
Operating Temperature
Storage Temperature
Symbol
Hi-Eff Red
Green
80
Unit
mW
mA
mA
V
Pd
IF
80
30
30
IFP
150
150
(Duty 1/10, 1KHZ)
VR
5
-40℃~80℃
-40℃~85℃
Topr
Tstg
Tsol
-
-
Soldering Temperature
(1/16" From Body)
260℃ For 5 Seconds
-
● Electrical And Optical Characteristics(Ta=25℃)
Hi-Eff Red
Parameter
Symbol Condition Min.
Typ.
1.9
10.0
-
Max.
Unit
V
Forward Voltage Per Dot
Luminous Intensity Per Dot
Reverse Current Per Dot
Peak Wave Length
VF
Iv
IF=10mA
IF=10mA
VR=5V
-
2.5
-
-
100
-
mcd
µA
IR
-
λp
λd
∆λ
IF=10mA
IF=10mA
IF=10mA
-
626
-
640
-
nm
nm
nm
Dominant Wave Length
Spectral Line Half-width
636
-
40
Green
Parameter
Symbol Condition Min.
Typ.
Max.
Unit
V
Forward Voltage Per Dot
VF
IF=10mA
-
2.1
2.5
佰鴻工業股份有限公司
Luminous Intensity Per Dot
Reverse Current Per Dot
Iv
IR
IF=10mA
VR=5V
-
-
10.0
-
-
100
-
mcd
µA
http://www.brtled.com
λp
λd
∆λ
Peak Wave Length
IF=10mA
IF=10mA
IF=10mA
-
569
-
568
nm
nm
nm
Dominant Wave Length
Spectral Line Half-width
-
574
-
30
Ver. 1.0 Page 2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-10EG88ND
● Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength
(G) (E)
1.0
0.5
0
530
560
590
620
650
680
710
Wavelength(nm)
Fig.3 Relative Luminous
Intensity VS.
Fig.2 Forward Current VS.
Forward Voltage
Ambient Temperature
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
(E)
(G)
1
2
3
4
5
-40 -20
0
20
40
60
Ambient Temperature Ta( C)
Forward Voltage (V)
Fig.4 Relative Luminous
Intensity VS.
Fig.5 Forward Current
Derating Curve VS.
Ambient Temperature
Forward Current
50
40
3.0
2.0
1.0
0.0
(G)
佰鴻工業股份有限公司
30
(E)
http://www.b2r0 tled.com
10
0
20 40 60 80 100 120
0
10
20
30
40
50
Ambient Temperature Ta( C)
Forward Current(mA)
Ver. 1.0 Page 3 of 3
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