BM-11457ND [BRTLED]

1.252 inch (31.80mm) matrix height Low power requirement.; 1.252英寸( 31.80毫米)矩阵高度低功耗的要求。
BM-11457ND
型号: BM-11457ND
厂家: BRTLED    BRTLED
描述:

1.252 inch (31.80mm) matrix height Low power requirement.
1.252英寸( 31.80毫米)矩阵高度低功耗的要求。

光电 功效
文件: 总3页 (文件大小:343K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BM-11457ND  
Package Dimensions :  
Features :  
4.57x4=18.28(.720)  
1. 1.252 inch (31.80mm) matrix height.  
2. Dot size 3.0mm.  
3. Low power requirement.  
4. Excellent characters appearance.  
5. Solid state reliability.  
+
6. Multiplex drive , column cathode com.  
and row anode com.  
3.0x35  
(.118x35)  
PIN 1.  
22.75(.896)  
7. Single color available.  
8. Categorized for luminous intensity.  
9. Stackable vertically and horizontally.  
8.00(.315)  
3.0(.118)MIN  
0.50(.020)  
2.54x6=15.24(.600)  
Description :  
1. The BM-11457ND is a 31.8mm(1.252")  
matrix height 5×7 dot matrix display.  
2. This product use hi-eff red chips, which  
are made from GaAsP on GaP substrate.  
3. This product have a black face and  
Notes:  
1. All dimensions are in millimeters(inches).  
2. Tolerance is ±0.25mm(.01")unless otherwise  
specified.  
3. Specifications are subject to change without  
notice.  
white dots.  
4. This product doesn't contain restriction  
substance, comply ROHS standard.  
Internal Circuit Diagram :  
Ver.2.0 Page 1 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BM-11457ND  
Absolute Maximum Ratings(Ta=25)  
Parameter  
Power Dissipation Per Dot  
Forward Current Per Dot  
Peak Forward Current Per Dot  
Symbol  
Rating  
Unit  
mW  
mA  
mA  
V
Pd  
80  
IF  
30  
150  
IFP  
(Duty 1/10, 1KHZ)  
Reverse Voltage Per Dot  
Operating Temperature  
Storage Temperature  
VR  
5
-40~80℃  
-40~85℃  
260For 5 Seconds  
Topr  
Tstg  
Tsol  
-
-
Soldering Temperature  
(1/16" From Body)  
-
Electrical And Optical Characteristics(Ta=25)  
Parameter  
Forward Voltage Per Dot  
Luminous Intensity Per Dot  
Reverse Current Per Dot  
Peak Wave Length  
Symbol Condition Min.  
Typ.  
1.9  
9.0  
-
Max.  
Unit  
V
VF  
Iv  
IF=10mA  
IF=10mA  
VR=5V  
-
2.5  
-
-
100  
-
mcd  
µA  
IR  
-
λp  
λd  
λ  
IF=10mA  
IF=10mA  
IF=10mA  
-
626  
-
640  
-
nm  
nm  
nm  
Dominant Wave Length  
Spectral Line Half-width  
636  
-
40  
Ver.2.0 Page 2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BM-11457ND  
Typical Electro-Optical Characteristics Curves  
(25Ambient Temperature Unless Otherwise Noted)  
Fig.1 Relative Radiant Intensity VS. Wavelength  
1.0  
0.5  
0
560  
590  
620  
650  
680  
710  
740  
Wavelength(nm)  
Fig.3 Relative Luminous  
Intensity VS.  
Fig.2 Forward Current VS.  
Forward Voltage  
Ambient Temperature  
50  
40  
30  
20  
10  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0
1
2
3
4
5
-40 -20  
0
20  
40  
60  
Ambient Temperature Ta( C)  
Forward Voltage (V)  
Fig.4 Relative Luminous  
Intensity VS.  
Fig.5 Forward Current  
Derating Curve VS.  
Ambient Temperature  
Forward Current  
50  
3.0  
2.0  
40  
30  
20  
1.0  
0.0  
10  
0
0
20 40 60 80 100 120  
0
10  
20  
30  
40  
50  
Forward Current(mA)  
Ambient Temperature Ta( C)  
Ver.2.0 Page 3 of 3  

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BRTLED