BM-41EG57MD [BRTLED]
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.; HI- EFF红筹股和绿色芯片， HI- EFF RED芯片上的GaP衬底制成的砷化镓，绿色芯片上的GaP衬底制成的差距。
| 型号： | BM-41EG57MD |
| 厂家： | 
BRTLED |
| 描述： | hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate. |
| 文件： | 总3页 (文件大小：408K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-41EG57MD
●
Package Dimensions :
●
Features :
1. 4.118 inch (104.6mm) matrix height.
2. Square size 12.0 × 12.0mm.
3. Low power requirement.
74.80(2.945)
4. Excellent characters appearance.
5. Solid state reliability.
6. Multiplex drive , column anode com.
and row cathode com.
76.20(3.000)
7. Multi color available.
8. Categorized for luminous intensity.
9. Stackable vertically and horizontally.
PIN 1.
12.0x12.0
(.472x.472)
12.80(.504)
●
Description :
3.00(.118) MIN.
0.80(.031)
5.08x8=40.64(1.600)
1. The BM-41EG57MD is a
104.6mm (4.118")matrix height
5×7 square matrix display.
Notes:
2. This product use hi-eff red chips and
green chips, the hi-eff red chips are
made from GaAsP on GaP substrate,
the green chips are made from GaP
on GaP subtrate.
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
3. This product have a black face and
white squares.
4. This product doesn't contain restriction
substance, comply ROHS standard.
● Internal Circuit Diagram :
佰鴻工業股份有限公司
http://www.brtled.com
Ver.1.0 Page 1 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-41EG57MD
● Absolute Maximum Ratings(Ta=25℃)
Hi-Eff Red
Rating
Green
Rating
Parameter
Symbol
Unit
Power Dissipation Per Dot
Forward Current Per Dot
Peak Forward Current Per Dot
Pd
160
160
mW
IF
30
30
mA
IFP
150
150
mA
VR
Reverse Voltage Per Dot
Operating Temperature
Storage Temperature
5
V
-
-40℃~80℃
-40℃~85℃
Topr
Tstg
Tsol
-
Soldering Temperature
260℃ For 5 Seconds
-
● Electrical And Optical Characteristics(Ta=25℃)
Hi-Eff Red
Parameter
Forward Voltage Per Dot
Luminous Intensity Per Dot
Reverse Current Per Dot
Peak Wave Length
Symbol Condition Min.
Typ.
3.8
15.0
-
Max.
Unit
V
VF
Iv
IF=10mA
IF=10mA
VR=5V
-
5.0
-
-
100
-
mcd
µA
IR
-
λp
λd
∆λ
IF=10mA
IF=10mA
IF=10mA
-
626
-
640
-
nm
nm
nm
Dominant Wave Length
636
-
Spectral Line Half-width
Green
40
Parameter
Symbol Condition Min.
Typ.
Max.
Unit
V
Forward Voltage Per Dot
VF
IF=10mA
-
4.2
5.0
佰鴻工業股份有限公司
Luminous Intensity Per Dot
Iv
IR
IF=10mA
VR=5V
-
-
15.0
-
-
100
-
mcd
µA
Reverse Current hPertDtotp://www.brtled.com
λp
λd
∆λ
Peak Wave Length
IF=10mA
IF=10mA
IF=10mA
-
569
-
568
-
nm
nm
nm
Dominant Wave Length
Spectral Line Half-width
574
-
30
Ver.1.0 Page 2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-41EG57MD
● Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength
(G) (E)
1.0
0.5
0
530
560
590
620
650
680
710
Wavelength(nm)
Fig.3 Relative Luminous
Intensity VS.
Fig.2 Forward Current VS.
Forward Voltage
Ambient Temperature
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
(E)
(G)
1
2
3
4
5
-40 -20
0
20
40
60
Ambient Temperature Ta( C)
Forward Voltage (V)
Fig.4 Relative Luminous
Intensity VS.
Fig.5 Forward Current
Derating Curve VS.
Ambient Temperature
Forward Current
50
40
3.0
佰鴻工業股份有限公司
(G)
2.0
30
(E)
20
http://www.brtled.com
1.0
10
0
0.0
20 40 60 80 100 120
Ambient Temperature Ta( C)
0
10
20
30
40
50
Forward Current(mA)
Ver.1.0 Page 3 of 3
相关型号：
BM-41EG57ND
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
BRTLED
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