BPT-BP1334 [BRTLED]

LED; LED
BPT-BP1334
型号: BPT-BP1334
厂家: BRTLED    BRTLED
描述:

LED
LED

文件: 总3页 (文件大小:229K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BPT-BP1334  
END- LOOK PACKAGE  
PHOTOTRANSISTOR  
Package Dimensions:  
z Features  
5.0(.197)  
1. Wide range of collector current.  
2. high sensitivity.  
Collector  
Emitter  
3. Low cost plastic package.  
8.6(.339)  
1.0(.039)  
4. Lens Appearance: Water Clear.  
5. This product doesn't contain restriction  
1.5(.059) MAX.  
substance, comply ROHS standard  
23.4(.921) MIN.  
0.5(.020) SQ.TYP.  
5.7(.224)  
Collector  
Emitter  
1.00(.039) MIN.  
2.54(.100) NOM.  
z Description  
The BPT-BP1334 is a NPN silicon phototransistor  
mounted in a lensed , special dark plastic package .  
The lensing effect of the package allows an  
acceptance half view angle of 35that is  
measured from the optical axis to the half  
power point .  
NOTES:  
1.All dimensions are in millimeters (inches).  
2.Tolerance is ±0.25mm (0.01’) unless otherwise specified.  
3.Lead spacing is measured where the leads emerge from the package  
4.Specifications are subject to change without notice  
z Absolute Maximum Ratings(Ta=25)  
Parameter  
Power Dissipation  
Maximum Rating  
Unit  
mW  
V
100  
30  
5
Collector- Emitter Voltage  
Emitter- Collector Voltage  
Operating Temperature  
Storage Temperature Range  
Lead Soldering Temperature  
V
-45~+85℃  
-45~+100℃  
260for 5 seconds  
Rev:1.0  
Page1 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BPT-BP1334  
z Electrical Characteristics (TA=25unless otherwise noted)  
PARAMETER  
Collector- Emitter  
SYMBOL MIN  
TYP  
MAX  
UNITS  
TEST CONDITIONS  
IC=0.1mA Ee=0mW/cm2  
V(BR)CEO  
V(BR)ECO  
VCE(SAT)  
30  
5
-
-
V
Breakdown Voltage  
Emitter-Collector  
Breakdown Voltage  
Collector- Emitter  
Saturation Voltage  
-
-
-
V
V
IR=0.1mA Ee=0 mW/cm2  
-
0.5  
IC=0.1 mA Ee=1.0 mW/cm2  
μS  
μS  
nA  
Rise Time  
Fall Time  
Collector Dark Current  
On State Collector Current  
Tr  
Tf  
ICEO  
IC(ON)  
-
-
-
-
15  
15  
-
-
Vcc=5V RL=1KIC=1mA  
Vcc=5V RL=1KIC=1mA  
VCE=10V Ee=0 mW/cm2  
VCE=5V Ee=1.0mW/cm2  
-
100  
-
13.5  
mA  
z Typical Optical-Electrical Characteristic Curves  
FIG.2 Power Dissipation Vs.  
Ambient Temperature  
FIG.1 Dark Current Vs.  
(uA)  
Ambient Temperature  
(mW)  
120  
10000  
1000  
100  
100  
10  
80  
60  
1
40  
20  
0.1  
0.01  
0
(°C)  
0
20  
60 80 100 120  
-25  
0
25  
50 75 100 125(°C)  
40  
Ambient Temperature  
Ambient Temperature  
FIG.3 Rise And Fall Time Vs.  
Load Resistance  
FIG.4 Relative Collector Current Vs.  
Irradiance  
(us)  
20  
Vcc=5V  
2.5  
2.0  
1.5  
1.0  
0.5  
0
F=100Hz  
Vce=5V  
16  
Tf  
12  
8
Tr  
4
2
(mW/cm )  
0.5  
0
1.5 2.0 2.5 3.0  
Irradiance  
1.0  
0
0.2  
(K )  
1.0  
0
0.4  
0.6  
0.8  
Load Resistance  
Rev: 1.0 Page2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BPT-BP1334  
Tapping and packaging specifications(Units: mm)  
z Packaging Bag Dimensions  
Notes:  
1500pcs per bag, 5Kpcs per box.  
2All dimensions are in millimeters(inches).  
3Specifications are subject to change without notice.  
Rev: 1.0 Page3 of 3  

相关型号:

BPT-BP1914

SILICON PHOTO TRANSISTOR
YSTONE

BPT-BP1931

SILICON PHOTO TRANSISTOR
YSTONE

BPT-BP1934

Photo Transistor
YSTONE

BPT-BP1941

Photo Transistor
YSTONE

BPT-BP1A34

Photo Transistor
YSTONE

BPT-BP1A41

Photo Transistor
YSTONE

BPT-BP2314

SILICON PHOTO TRANSISTOR
YSTONE
BRTLED

BPT-BP2331

SILICON PHOTO TRANSISTOR
YSTONE
BRTLED

BPT-BP2334

END- LOOK PACKAGE PHOTOTRANSISTOR
BRTLED

BPT-BP2334

Photo Transistor
YSTONE