BPT-NP23C2 [BRTLED]
SIDE- LOOK PACKAGE PHOTOTRANSISTOR; 副作用LOOK包装PHOTOTRANSISTOR型号: | BPT-NP23C2 |
厂家: | BRTLED |
描述: | SIDE- LOOK PACKAGE PHOTOTRANSISTOR |
文件: | 总4页 (文件大小:227K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPT-NP23C2
SIDE- LOOK PACKAGE
PHOTOTRANSISTOR
● Package Dimensions:
● Features
1. Wide range of collector current.
2. High sensitivity.
1.7(.067)
2.5(.098)
3.8(.150)
4.0(.157)
3. Low cost plastic package.
4. Lens Appearance: Water Clear.
4.6(.181)
1.5(.059)
5. This product doesn't contain restriction
1.6(.063)
4.5(.177)
2.9(.114)
substance, comply ROHS standard
1.8(.071)
0.65(.026)
14.0(.551) MIN.
0.5(.020)
● Description
1
2
The BPT-NP23C2 is a NPN silicon phototransistor
mounted in a lensed ,water clear plastic package .
The lensing effect of the package allows an
acceptance half view angle of 50∘that is
measured from the optical axis to the half
power point .
1.0(.039) MIN.
0.5(.019)
2.54(.100)
1. Emitter
2. Collector
NOTES:
1.All dimensions are in millimeters (inches).
2.Tolerance is ±0.25mm (0.01’’) unless otherwise specified.
3.Lead spacing is measured where the leads emerge from the package
4.Specifications are subject to change without notice
● Absolute Maximum Ratings(Ta=25℃)
Parameter
Power Dissipation
Maximum Rating
Unit
mW
V
100
30
5
Collector- Emitter Voltage
Emitter- Collector Voltage
Operating Temperature
V
-45℃~+85℃
Storage Temperature Range
Lead Soldering Temperature
-45℃~+100℃
260℃ for 5 seconds
Rev:2.2 Page1 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPT-NP23C2
● Electrical Characteristics (TA=25℃ unless otherwise noted)
PARAMETER
Collector- Emitter
SYMBOL MIN
TYP
MAX
UNITS
TEST CONDITIONS
IC=1 mA Ee=0mW/cm2
V(BR)CEO
V(BR)ECO
VCE(SAT)
Tr
30
5
-
-
V
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector- Emitter
Saturation Voltage
-
-
V
V
IR=0.1mA Ee=0 mW/cm2
-
-
-
0.5
-
IC=0.1 mA Ee=1.0mW/cm2
Rise Time
25
VCE =5V RL=1KΩ
μS
F=100HZ
Fall Time
Tf
Id
-
-
-
25
-
-
100
-
Collector Dark Current
Light Current
nA
VCE=10V Ee=0 mW/cm2
VCE=5V Ee=1.0mW/cm2
IC (ON)
13
mA
● Typical Optical-Electrical Characteristic Curves
FIG.2 Power Dissipation Vs.
Ambient Temperature
FIG.1 Dark Current Vs.
(uA)
Ambient Temperature
(mW)
120
10000
100
1000
100
10
80
60
1
40
20
0.1
0.01
0
(°C)
0
20
60 80 100 120
-25
0
25
50 75 100 125(°C)
40
Ambient Temperature
Ambient Temperature
FIG.3 Rise And Fall Time Vs.
Load Resistance
FIG.4 Relative Collector Current Vs.
Irradiance
(us)
20
Vcc=5V
2.5
2.0
1.5
1.0
0.5
0
Vce=5V
F=100Hz
16
Tf
12
8
Tr
4
2
(mW/cm )
0.5
0
1.5 2.0 2.5 3.0
Irradiance
1.0
0
0.2
(K )
1.0
0
0.4
0.6
0.8
Load Resistance
Rev:2.2
Page2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPT-NP23C2
● Tapping and packaging specifications(Units: mm)
● Packaging Bag Dimensions
Notes:
1、1000pcs per bag, 8Kpcs per box.
2、All dimensions are in millimeters(inches).
3、Specifications are subject to change without notice.
Rev:2.2
Page3 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPT-NP23C2
Phototransistor Specification
ꢀCommodity: Phototransistor
ꢀ Collector Current Bin Limits (At 1mW/ cm2)
BIN CODE
Min.(mA)
Max.(mA)
0.985
0.799
0.985
1.050
1.250
1.400
1.550
P8
P9
1.050
1.250
1.400
1.550
1.700
P10
P11
P12
P13
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