BH616UV1611BI55 [BSI]

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit; 超低功耗/高速CMOS SRAM 1M X 16位/ 2M ×8位
BH616UV1611BI55
型号: BH616UV1611BI55
厂家: BRILLIANCE SEMICONDUCTOR    BRILLIANCE SEMICONDUCTOR
描述:

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit
超低功耗/高速CMOS SRAM 1M X 16位/ 2M ×8位

静态存储器
文件: 总12页 (文件大小:149K)
下载:  下载PDF数据表文档文件

BH616UV1611BI70

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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10 BSI

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0 BSI

BH616UV1611BIG55

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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15 BSI

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0 BSI

BH616UV1611BIG70

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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21 BSI

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0 BSI

BH616UV1611BIP55

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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18 BSI

BH616UV1611BIP70

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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16 BSI

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0 BSI

BH616UV1611DI55

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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11 BSI

BH616UV1611DI70

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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14 BSI

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0 BSI

BH616UV1611DIG55

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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14 BSI

BH616UV1611DIG70

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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13 BSI

BH616UV1611DIP55

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

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14 BSI