BS616UV2019TI10 [BSI]

Ultra Low Power CMOS SRAM 128K X 16 bit; 超低功耗CMOS SRAM 128K ×16位

BS616UV2019TI10


型号：	BS616UV2019TI10
厂家：	BRILLIANCE SEMICONDUCTOR
描述：	Ultra Low Power CMOS SRAM 128K X 16 bit 超低功耗CMOS SRAM 128K ×16位存储内存集成电路静态存储器光电二极管
文件：	总11页 (文件大小：172K)
下载：	下载PDF数据表文档文件

BS616UV2019TI-10

Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit

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7 BSI

BS616UV2019TI85

Ultra Low Power CMOS SRAM 128K X 16 bit

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9 BSI

BS616UV2019TI-85

Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit

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10 BSI

BS616UV2019TIG10

Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit

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3 BSI

BS616UV2019TIG10

Ultra Low Power CMOS SRAM 128K X 16 bit

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4 BSI

BS616UV2019TIG85

Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit

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4 BSI

BS616UV2019TIG85

Ultra Low Power CMOS SRAM 128K X 16 bit

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10 BSI

BS616UV2019TIP10

Ultra Low Power CMOS SRAM 128K X 16 bit

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13 BSI

BS616UV2019TIP10

Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit

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2 BSI

BS616UV2019TIP85

Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit

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3 BSI

BS616UV2019TIP85

Ultra Low Power CMOS SRAM 128K X 16 bit

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12 BSI

BS616UV2021

Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

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7 BSI

BS616UV2021AC

Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

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3 BSI

BS616UV2021AI

Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

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2 BSI

BS616UV2021DC

Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

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4 BSI

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