BY255 [BYTES]

3.0 AMP SILICON RECTIFIERS; 3.0 AMP硅整流
BY255
型号: BY255
厂家: BYTES    BYTES
描述:

3.0 AMP SILICON RECTIFIERS
3.0 AMP硅整流

文件: 总2页 (文件大小:153K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BY251 THRU BY255  
3.0 AMP SILICON RECTIFIERS  
VOLTAGE RANGE  
200 to 1300 Volts  
CURRENT  
3.0 Amperes  
FEATURES  
* Low forward voltage drop  
* High current capability  
* High reliability  
DO-27  
.220(5.6)  
.197(5.0)  
* High surge current capability  
DIA.  
1.0(25.4)  
MIN.  
MECHANICAL DATA  
* Case: Molded plastic  
.375(9.5)  
.285(7.2)  
* Epoxy: UL 94V-0 rate flame retardant  
* Lead: Axial leads, solderable per MIL-STD-202,  
method 208 guranteed  
* Polarity: Color band denotes cathode end  
* Mounting position: Any  
1.0(25.4)  
MIN.  
.052(1.3)  
*
Weight: 1.10 grams  
.048(1.2)  
DIA.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating 25 C ambient temperature uniess otherwies specified.  
Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
BY251  
200  
BY252  
400  
BY253  
600  
BY254  
800  
BY255  
1300  
910  
UNITS  
TYPE NUMBER  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
140  
280  
420  
560  
Maximum DC Blocking Voltage  
200  
400  
600  
800  
1300  
Maximum Average Forward Rectified Current  
.375"(9.5mm) Lead Length at Ta=75 C  
3.0  
A
Peak Forward Surge Current, 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
Maximum Instantaneous Forward Voltage at 3.0A  
A
200  
V
µA  
1.0  
5.0  
Maximum DC Reverse Current  
Ta=25 C  
at Rated DC Blocking Voltage  
Typical Junction Capacitance (Note 1)  
Ta=100 C  
50  
µA  
pF  
40  
30  
Typical Thermal Resistance RθJA (Note 2)  
Operating and Storage Temperature Range TJ, TSTG  
C/W  
C
-65 +150  
NOTES:  
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.  
RATING AND CHARACTERISTIC CURVES (BY251 THRU BY255)  
FIG.1-TYPICAL FORWARD  
CHARACTERISTICS  
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE  
3.0  
2.5  
2.0  
50  
Single Phase  
10  
3.0  
1.0  
1.5  
1.0  
Half Wave 60Hz  
Resistive Or Inductive Load  
0.375"(9.5mm) Lead Length  
0.5  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
AMBIENT TEMPERATURE,( C)  
Tj=25 C  
Pulse Width 300us  
1% Duty Cycle  
0.1  
.01  
FIG.4-MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
250  
200  
150  
100  
50  
.6  
.7  
.8  
.9  
1.0 1.1 1.2 1.3  
FORWARD VOLTAGE,(V)  
8.3ms Single Half  
Tj=25 C  
Sine Wave  
JEDEC method  
FIG.3 - TYPICAL REVERSE  
CHARACTERISTICS  
0
50  
1
5
10  
100  
100  
NUMBER OF CYCLES AT 60Hz  
FIG.5-TYPICAL JUNCTION CAPACITANCE  
10  
1.0  
.1  
140  
Tj=100 C  
120  
100  
80  
60  
40  
20  
0
Tj=25 C  
.01  
.01  
.05  
.1  
.5  
1
5
10  
50  
100  
0
20 40 60 80 100 120 140  
REVERSE VOLTAGE,(V)  
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)  

相关型号:

BY255(G)

暂无描述
LGE

BY255-G

Rectifier Diode, 1 Phase, 1 Element, 3A, 1300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
SENSITRON

BY255-GT3

Rectifier Diode, 1 Phase, 1 Element, 3A, 1300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
SENSITRON

BY255-T3

3.0A HIGH VOLTAGE STANDARD DIODE
BL Galaxy Ele

BY255-T3

Rectifier Diode, 1 Phase, 1 Element, 3A, 1300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
SENSITRON

BY255-TB

3.0A HIGH VOLTAGE STANDARD DIODE
BL Galaxy Ele

BY255-TB-LF

Rectifier Diode, 1 Phase, 1 Element, 3A, 1300V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE

BY255G

GLASS PASSIVATED SILICON RECTIFIER
SHUNYE

BY255G

GLASS PASSIVATED GENERAL PURPOSE RECTIFIERS
TAYCHIPST

BY255GP

Glass Passivated Junction Plastic Rectifiers
VISHAY

BY255GP-E3

DIODE 3 A, 1300 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY

BY255GP-E3/100

DIODE 3 A, 1300 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY