概述
数据手册FR307G 概述
3.0AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS 3.0AMP玻璃钝化快速恢复
FR307G 数据手册
通过下载FR307G数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载FR301G THRU FR307G
3.0AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
3.0 Ampere
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
DO-27
.220(5.6)
.197(5.0)
* High surge current capability
* Glass passivated junction
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
.375(9.5)
.285(7.2)
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
1.0(25.4)
MIN.
.052(1.3)
* Weight: 1.10 grams
.048(1.2)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FR301G FR302G FR303G FR304G FR305G FR306G FR307G UNITS
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC Blocking Voltage
100
1000
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=55 C
3.0
A
A
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 3.0A
Maximum DC Reverse Current
125
1.3
5.0
V
µA
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
100
µA
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range Tj, TSTG
150
250
500
nS
60
pF
C
-65 +175
NOTES:
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
RATING AND CHARACTERISTIC CURVES (FR301G THRU FR307G)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
3.0
2.5
2.0
50
10
3.0
1.0
Single Phase
1.5
1.0
0.5
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
0
20
40
60
80
100
120
140
160
180
200
Tj=25 C
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
0.1
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
125
100
75
50
25
0
.6
.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
8.3ms Single Half
Tj=25 C
Sine Wave
50Ω
10Ω
NONINDUCTIVE
JEDEC method
NONINDUCTIVE
(
)
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
50
1
5
10
100
(
)
(+)
NUMBER OF CYCLES AT 60Hz
1Ω
OSCILLISCOPE
(NOTE 1)
NON-
INDUCTIVE
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
140
120
100
80
trr
|
|
|
|
|
|
|
|
+0.5A
0
60
40
20
0
-0.25A
-1.0A
.01
.05
.1
.5
1
5
10
50
100
1cm
SET TIME BASE FOR
50 / 10ns / cm
REVERSE VOLTAGE,(V)
FR307G 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| FR307G-F | RECTRON | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
| FR307G-STR | EIC | Glass Passivated Rectifiers | 获取价格 |
|
| FR307GH31 | RECTRON | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
| FR307GH33 | RECTRON | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
| FR307GH35 | RECTRON | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
| FR307GH36-3 | RECTRON | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
| FR307GM23 | RECTRON | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
| FR307GM24 | RECTRON | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
| FR307GM25 | RECTRON | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
| FR307GM26 | RECTRON | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
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